Philips BLV103 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV103

UHF power transistor

Product specification

March 1993

Philips Semiconductors Product specification

UHF power transistor BLV103

FEATURES

• Internal matching for an optimum
wideband capability and high gain

• Emitter-ballasting resistors for
optimum temperature profile

• Gold metallization ensures
excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor
encapsulated in a 6-lead SOT171
flange envelope with a ceramic cap. It
is intended for common emitter,
class-AB operation in cellular radio
base stations in the 960 MHz
frequency band. All leads are isolated
from the mounting base.

PINNING - SOT171

PIN DESCRIPTION

1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

(dB)

p

η

C

(%)

c.w. class-AB 960 24 4 > 11.5 > 45

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

PIN CONFIGURATION

, halfpage

1

3
5

2

4
6

handbook, halfpage

b

MBB012

c

e

Top view

March 1993 2

MBA931 - 1

Fig.1 Simplified outline and symbol.

Philips Semiconductors Product specification

UHF power transistor BLV103

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 4V
collector current DC or average value − 1.25 A
total power dissipation Tmb=25°C − 17 W
storage temperature range −65 150 °C
junction operating temperature − 200 °C

handbook, halfpage

5

I

C

(A)

1

0.1
110

(1) Second breakdown limit (independent of temperature).

Th = 70 oC

Tmb = 25 oC

(1)

VCE (V)

Fig.2 DC SOAR.

MRA366

25

handbook, halfpage

P

tot

(W)

20

15

10

5

2

10

0

0204060

(1) Continuous DC operation.
(2) Continuous RF operation.
(3) Short time operation during mismatch.

(3)

(2)
(1)

80

MRA365

100 120

o

C)

Th (

Fig.3 Power/temperature derating.

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

from junction to mounting base Tmb=25°C;

P

=17W

dis

10.3 K/W

from mounting base to heatsink 0.4 K/W

March 1993 3