Philips BLV10 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV10

VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

VHF power transistor BLV10

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

= 25 °C in an unneautralized common-emitter class-B circuit

h

CE

V

c.w. 13,5 175 8 > 9,0 > 70 2,8 + j1,2 76 − j16

c.w. 12,5 175 8 typ. 10,5 typ. 75 −−

PIN CONFIGURATION

handbook, halfpage

1

It has a 3/8” flange envelope with a
ceramic cap. All leads are isolated
from the flange.

f

MHz

P

L

W

4

G
dB

P

η

%

z

i

Ω

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Y

mS

L

23

MSB057

Fig.1 Simplified outline, SOT123.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLV10

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

= 0)

CESM
CEO

EBO
C(AV)
CM

=25°CP

mb

rf

stg

j

max. 36 V
max. 18 V
max. 4 V
max. 1,5 A
max. 4,0 A
max. 20 W

−65 to + 150 °C
max. 200 °C

1.75

handbook, halfpage

I

C

(A)

1.5

1.25

1

0.75

0.5
5101520

Th = 70 °C

Fig.2 D.C. SOAR.

Tmb = 25 °C

VCE (V)

MGP248

30

handbook, halfpage

P

tot

(W)

20

10

0

0 50 100

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

ΙΙΙ

derate by 0.12 W/K

ΙΙ

0.1 W/K

Ι

Fig.3 R.F. power dissipation;

VCE≤ 16,5 V; f > 1 MHz.

MGP249

Th (°C)

August 1986 3

Philips Semiconductors Product specification

VHF power transistor BLV10

THERMAL RESISTANCE

(dissipation = 8 W; T

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

= 0; IC= 5 mA V

V

BE

Collector-emitter breakdown voltage

open base; I

C

Emitter-base breakdown voltage

open collector; IE= 1 mA V

Collector cut-off current

V

= 0; VCE= 18 V I

BE

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

I

= 0,75 A; VCE=5 V h

C

Collector-emitter saturation voltage

IC= 2 A; IB= 0,4 A V

Transition frequency at f = 100 MHz

−IE= 0,75 A; VCB= 13,5 V f

−I

= 2 A; VCB= 13,5 V f

E

Collector capacitance at f = 1 MHz

I

=0;VCB= 13,5 V C

E=Ie

Feedback capacitance at f = 1 MHz

= 100 mA; VCE= 13,5 V C

I

C

Collector-flange capacitance C

= 72,4 °C, i.e. Th=70°C)

mb

= 25 mA V

(1)

(1)

(1)

th j-mb(dc)
th j-mb(rf)
th mb-h

(BR) CES

(BR) CEO

(BR)EBO

CES

SBO
SBR

FE

CEsat

T
T

c

re
cf

= 10,7 K/W
= 8,6 K/W
= 0,3 K/W

> 36 V

> 18 V

> 4V

< 2mA

> 0,5 mJ
> 0,5 mJ

typ. 40

10 to 100

typ. 0,85 V

typ. 950 MHz
typ. 850 MHz

typ. 16,5 pF

typ. 12 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4