Philips BLU99-SL, BLU99 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLU99 BLU99/SL

UHF power transistor

Product speciﬁcation

March 1993

Philips Semiconductors Product speciﬁcation

UHF power transistor

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

QUICK REFERENCE DATA

R.F. performance at T

MODE OF OPERATION

narrow band; c.w.

=25°C in a common-emitter class-B circuit.

BLU99

BLU99/SL

FEATURES

• multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile;

• gold metallization ensures excellent reliability.

The BLU99 has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. The BLU99/SL is a studless version (SOT122D).

12,5 470 5 > 10,5 > 60 12,5 900 4 typ. 7,0 typ. 60

MHz

PIN CONFIGURATION

PINNING - SOT122A; SOT122D

PIN DESCRIPTION

page

1 collector 2 emitter

3 base 4 emitter

Top view

Fig.1 Simplified outline.

SOT122A (BLU99).

MBK187

MSB055

Fig.2 Simplified outline.

SOT122D (BLU99/SL).

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

March 1993 2

Philips Semiconductors Product speciﬁcation

UHF power transistor

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter) V Collector-emitter voltage (open base) V Emitter-base voltage (open collector) V Collector current

d.c. or average I peak value; f > 1 MHz I

D.C. power dissipation up to T

=50°CP

R.F. power dissipation

f > 1 MHz; T

=25°CP

Storage temperature T Operating junction temperature T

MDA372

(A)

handbook, halfpage

Tmb = 50 °C

Th = 70 °C

CBO CEO EBO

C;IC(AV) CM

tot (d.c.)

tot (r.f.) stg j

handbook, halfpage

tot

(W)

BLU99

BLU99/SL

max. 36 V max. 16 V max. 3 V

max. 0,8 A max. 2,5 A max. 12,5 W

max. 19 W

−65 to + 150 °C max. 200 °C

MDA373

III

−1

th mb-h

= 0,6 K/W.

10 10

VCE (V)

I Continuous d.c. operation II Continuous r.f. operation (f > 1 MHz). III Short-time r.f. operation during mismatch (f > 1 MHz).

Fig.3 D.C. SOAR.

THERMAL RESISTANCE

(dissipation = 9 W; T

=25°C)

From junction to mounting base

(d.c. dissipation) R

From junction to mounting base

(r.f. dissipation) R

From mounting base to heatsink R

40 60 80

Th (°C)

100

Fig.4 Power/temperature derating curves.

th j-mb(dc)

th j-mb(rf) th mb-h

= 10 K/W

= 7,5 K/W = 0,6 K/W

March 1993 3

Philips Semiconductors Product speciﬁcation

UHF power transistor

CHARACTERISTICS

=25°C unless otherwise speciﬁed

Collector-base breakdown voltage

open emitter; I

Collector-emitter breakdown voltage

open base; IC= 20 mA V

Emitter-base breakdown voltage

open collector; IE= 1 mA V

Collector cut-off current

VBE= 0; VCE= 16 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

=10Ω E

D.C. current gain

IC= 0,6 A; VCE= 10 V h

Transition frequency at f = 500 MHz

IC= 0,6 A; VCE= 12,5 V f

Collector capacitance at f = 1 MHz

= 0; VCB= 12,5 V C

E=Ie

Feedback capacitance at f = 1 MHz

= 0; VCE= 12,5 V C

Collector-stud capacitance C

= 10 mA V

(2)

(1)

(BR)CBO

(BR)CEO

(BR)EBO

CES

SBR

re cs

BLU99

BLU99/SL

> 36 V

> 16 V

> 3V

< 5mA

> 1mJ

typ.25100

typ. 4,0 GHz

typ. 7,5 pF

typ. 5 pF typ. 1,2 pF

Notes

1. Measured under pulse conditions: t

=50µs; δ<0,01.

2. Measured under pulse conditions: tp= 300 µs; δ<0,01.

March 1993 4

Philips Semiconductors Product speciﬁcation

UHF power transistor

120

handbook, halfpage

0.8

MDA374

1.6 2.4 IC (A)

handbook, halfpage

(GHz)

0.4 0.8 1.2

BLU99

BLU99/SL

MDA375

1.6 IE (A)

Fig.5 VCE= 10 V; Tj=25°C; typ. values.

handbook, halfpage

(pF)

020

4812

VCB (V)

Fig.6 VCB= 12,5 V; f = 500 MHz; Tj=25°C;

typ. values.

MDA376

Fig.7 IE=ie= 0; f = 1 MHz; typ. values.

March 1993 5

Philips Semiconductors Product speciﬁcation

UHF power transistor

APPLICATION INFORMATION (part I) R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 470 MHz; T

MODE OF OPERATION

narrow band; c.w. 12,5 5

handbook, full pagewidth

50 Ω

L3 R1

< 0,45 > 10,5 < 0,665 > 60 typ. 0,32 typ. 12 typ. 0,60 typ. 66

T.U.T.

C5 C6

G dB

MDA365

=25°C.

BLU99

BLU99/SL

50 Ω

Fig.8 Class-B test circuit at f = 470 MHz.

List of components:

C1 = 2,7 pF multilayer ceramic chip capacitor

(1)

C2 = C7 = C8 = 1,4-5,5 pF ﬁlm dielectric trimmer (cat.no. 2222 809 09001) C3 = 7,5 pF multilayer ceramic chip capacitor

(1)

C4 = 2-9 pF ﬁlm dielectric trimmer (cat.no. 2222 809 09002) C5 = 100 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13101) C6 = 100 nF metallized ﬁlm capacitor (cat. no. 2222 352 45104) L1 = stripline, 22,5 mm × 6,0 mm L2 = 1 turn Cu-wire (1,0 mm), int. dia. 5,5 mm, leads 2 × 5 mm L3 = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L5 = 4 turns enamelled Cu-wire (1,0 mm), int. dia. 6 mm, length 7,5 mm, leads 2 × 5 mm L6 = stripline, 10,0 mm × 6,0 mm L7 = 1 turn Cu-wire (1,0 mm), int. dia. 5 mm, leads 2 × 5 mm R1 = R2 = 10 Ω metal ﬁlm resistor, 0,25 W L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. ﬁbre-glass dielectric (εr= 2,74) and a

thickness of1⁄16 inch.

Note

1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.

March 1993 6

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