Philips Semiconductors Product specification
UHF power transistor BLU97
DESCRIPTION
N-P-N silicon planar epitaxial
transistor designed for use in mobile
radio transmitters in the 470 MHz
band.
FEATURES
• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.
• gold metallization ensures
The transistor has a 4-lead stud
envelope with a ceramic cap
(SOT122A). All leads are isolated
from the stud.
excellent reliability.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION
= 25 °C in a common-emitter class-B circuit
h
V
CE
V
f
MHz
P
W
L
G
p
η
dB
narrow band; c.w. 12,5 470 7 > 8,5 > 55
PIN CONFIGURATION
PINNING - SOT122A.
PIN DESCRIPTION
1 collector
2 emitter
handbook, halfpage
4
31
3 base
4 emitter
C
%
2
Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
UHF power transistor BLU97
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
CBO
CEO
EBO
Collector current
d.c. or average I
(peak value); f > 1 MHz I
C
CM
Total power dissipation
at Tmb=52°CP
f > 1 MHz; T
=52°CP
mb
Storage temperature T
Operating junction temperature T
tot(d.c.)
tot(r.f.)
stg
j
max. 36 V
max. 16 V
max. 3 V
max. 1,2 A
max. 3,6 A
max. 17 W
max. 22,5 W
−65 to +150 °C
max. 200 °C
CE
(V)
MDA360
40
handbook, halfpage
P
tot
(W)
30
20
10
2
10
I Continuous operation
II Continuous operation (f > 1 MHz).
III Short-time operation during mismatch (f > 1 MHz).
10
handbook, halfpage
I
C
(A)
1
−1
10
110
R
= 0,6 K/W.
th mb-h
Tmb = 52 °C
Th = 70 °C
V
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
Dissipation = 15 W; T
mb
= 25 °C
From junction to mounting base
(d.c. dissipation) R
(r.f. dissipation) R
From mounting base to heatsink R
MDA361
III
II
I
0
0
40 80
120
Th (°C)
160
Fig.3 Power/temperature derating curves.
th j-mb(dc)
th j-mb(rf)
th mb-h
= 7,5 K/W
= 5,6 K/W
= 0.6 K/W
August 1986 3
Philips Semiconductors Product specification
UHF power transistor BLU97
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-base breakdown voltage, open emitter; IC= 15 mA V
Collector-emitter breakdown voltage, open base; I
Emitter-base breakdown voltage, open collector; I
Collector cut-off current, V
= 0; VCE= 16 V I
BE
Second breakdown energy, L = 25 mH; f = 50 Hz; R
D.C. current gain, I
Transition frequency at f = 500 MHz
Collector capacitance at f = 1 MHz, I
Feed-back capacitance at f = 1 MHz, I
= 0,9 A; VCE= 10 V h
C
(1)
, −IE= 0,9 A; VCB= 12,5 V f
= 0; VCB= 12,5 V C
E=ie
= 0; VCE= 12,5 V C
C
= 30 mA V
C
= 1,5 mA V
E
=10Ω E
BE
Collector-stud capacitance C
Note
1. Measured under pulse conditions: t
= 50 µs; δ<1%.
p
(BR)CBO
(BR)CEO
(BR)EBO
CES
SBR
FE
T
c
re
cs
> 36 V
> 16 V
> 3V
< 7,5 mA
> 2,3 mJ
> 25
typ. 100
typ. 4,0 GHz
typ. 10 pF
typ. 7 pF
typ. 1,2 pF
120
handbook, halfpage
h
FE
80
40
0
0
0.8
1.6 3.22.4
Fig.4 Tj=25°C; VCE= 10 V; typical values.
MDA362
IC (A)
4.8
handbook, halfpage
f
T
(GHz)
3.2
1.6
0
0
0.8
1.6 3.22.4
−IE (A)
Fig.5 VCB= 12,5 V; f = 500 MHz; tp=50µs;
Tj=25°C; typical values.
MDA363
August 1986 4