Philips BLU97 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLU97

UHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

UHF power transistor BLU97

DESCRIPTION

N-P-N silicon planar epitaxial
transistor designed for use in mobile
radio transmitters in the 470 MHz
band.

FEATURES

• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.

• gold metallization ensures

The transistor has a 4-lead stud
envelope with a ceramic cap
(SOT122A). All leads are isolated
from the stud.

excellent reliability.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION

= 25 °C in a common-emitter class-B circuit

h

V

CE

V

f

MHz

P

W

L

G

p

η

dB

narrow band; c.w. 12,5 470 7 > 8,5 > 55

PIN CONFIGURATION

PINNING - SOT122A.

PIN DESCRIPTION

1 collector
2 emitter

handbook, halfpage

4

31

3 base
4 emitter

C

%

2

Top view

MBK187

Fig.1 Simplified outline. SOT122A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

UHF power transistor BLU97

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V

CBO
CEO
EBO

Collector current

d.c. or average I
(peak value); f > 1 MHz I

C
CM

Total power dissipation

at Tmb=52°CP
f > 1 MHz; T

=52°CP

mb

Storage temperature T
Operating junction temperature T

tot(d.c.)
tot(r.f.)
stg
j

max. 36 V
max. 16 V
max. 3 V

max. 1,2 A
max. 3,6 A

max. 17 W
max. 22,5 W

−65 to +150 °C
max. 200 °C

CE

(V)

MDA360

40

handbook, halfpage

P

tot

(W)

30

20

10

2

10

I Continuous operation
II Continuous operation (f > 1 MHz).
III Short-time operation during mismatch (f > 1 MHz).

10

handbook, halfpage

I

C

(A)

1

−1

10

110

R

= 0,6 K/W.

th mb-h

Tmb = 52 °C

Th = 70 °C

V

Fig.2 D.C. SOAR.

THERMAL RESISTANCE

Dissipation = 15 W; T

mb

= 25 °C

From junction to mounting base

(d.c. dissipation) R
(r.f. dissipation) R

From mounting base to heatsink R

MDA361

III

II

I

0

0

40 80

120

Th (°C)

160

Fig.3 Power/temperature derating curves.

th j-mb(dc)
th j-mb(rf)
th mb-h

= 7,5 K/W
= 5,6 K/W
= 0.6 K/W

August 1986 3

Philips Semiconductors Product specification

UHF power transistor BLU97

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-base breakdown voltage, open emitter; IC= 15 mA V
Collector-emitter breakdown voltage, open base; I
Emitter-base breakdown voltage, open collector; I
Collector cut-off current, V

= 0; VCE= 16 V I

BE

Second breakdown energy, L = 25 mH; f = 50 Hz; R
D.C. current gain, I
Transition frequency at f = 500 MHz

Collector capacitance at f = 1 MHz, I
Feed-back capacitance at f = 1 MHz, I

= 0,9 A; VCE= 10 V h

C

(1)

, −IE= 0,9 A; VCB= 12,5 V f

= 0; VCB= 12,5 V C

E=ie

= 0; VCE= 12,5 V C

C

= 30 mA V

C

= 1,5 mA V

E

=10Ω E

BE

Collector-stud capacitance C

Note

1. Measured under pulse conditions: t

= 50 µs; δ<1%.

p

(BR)CBO
(BR)CEO
(BR)EBO

CES

SBR

FE

T

c
re
cs

> 36 V
> 16 V
> 3V
< 7,5 mA
> 2,3 mJ
> 25

typ. 100
typ. 4,0 GHz
typ. 10 pF
typ. 7 pF
typ. 1,2 pF

120

handbook, halfpage

h

FE

80

40

0

0

0.8

1.6 3.22.4

Fig.4 Tj=25°C; VCE= 10 V; typical values.

MDA362

IC (A)

4.8

handbook, halfpage

f

T

(GHz)

3.2

1.6

0

0

0.8

1.6 3.22.4

−IE (A)

Fig.5 VCB= 12,5 V; f = 500 MHz; tp=50µs;

Tj=25°C; typical values.

MDA363

August 1986 4