Philips BLU97 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
BLU97
UHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification

DESCRIPTION

N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band.

FEATURES

multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
gold metallization ensures
The transistor has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud.
excellent reliability.

QUICK REFERENCE DATA

R.F. performance up to T
MODE OF OPERATION
= 25 °C in a common-emitter class-B circuit
h
V
CE
V
f
MHz
P
W
L
G
p
η
dB
narrow band; c.w. 12,5 470 7 > 8,5 > 55

PIN CONFIGURATION

PINNING - SOT122A.

PIN DESCRIPTION
1 collector 2 emitter
handbook, halfpage
4
31
3 base 4 emitter
C
%
2
Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter) V Collector-emitter voltage (open base) V Emitter-base voltage (open collector) V
CBO CEO EBO
Collector current
d.c. or average I (peak value); f > 1 MHz I
C CM
Total power dissipation
at Tmb=52°CP f > 1 MHz; T
=52°CP
mb
Storage temperature T Operating junction temperature T
tot(d.c.) tot(r.f.) stg j
max. 36 V max. 16 V max. 3 V
max. 1,2 A max. 3,6 A
max. 17 W max. 22,5 W
65 to +150 °C max. 200 °C
CE
(V)
MDA360
40
handbook, halfpage
P
tot
(W)
30
20
10
2
10
I Continuous operation II Continuous operation (f > 1 MHz). III Short-time operation during mismatch (f > 1 MHz).
10
handbook, halfpage
I
C
(A)
1
1
10
110
R
= 0,6 K/W.
th mb-h
Tmb = 52 °C
Th = 70 °C
V
Fig.2 D.C. SOAR.

THERMAL RESISTANCE

Dissipation = 15 W; T
mb
= 25 °C
From junction to mounting base
(d.c. dissipation) R (r.f. dissipation) R
From mounting base to heatsink R
MDA361
III
II
I
0
0
40 80
120
Th (°C)
160
Fig.3 Power/temperature derating curves.
th j-mb(dc) th j-mb(rf) th mb-h
= 7,5 K/W = 5,6 K/W = 0.6 K/W
August 1986 3
Philips Semiconductors Product specification

CHARACTERISTICS

T
=25°C unless otherwise specified
j
Collector-base breakdown voltage, open emitter; IC= 15 mA V Collector-emitter breakdown voltage, open base; I Emitter-base breakdown voltage, open collector; I Collector cut-off current, V
= 0; VCE= 16 V I
BE
Second breakdown energy, L = 25 mH; f = 50 Hz; R D.C. current gain, I Transition frequency at f = 500 MHz
Collector capacitance at f = 1 MHz, I Feed-back capacitance at f = 1 MHz, I
= 0,9 A; VCE= 10 V h
C
(1)
, IE= 0,9 A; VCB= 12,5 V f
= 0; VCB= 12,5 V C
E=ie
= 0; VCE= 12,5 V C
C
= 30 mA V
C
= 1,5 mA V
E
=10 E
BE
Collector-stud capacitance C
Note
1. Measured under pulse conditions: t
= 50 µs; δ<1%.
p
(BR)CBO (BR)CEO (BR)EBO
CES
SBR
FE
T
c re cs
> 36 V > 16 V > 3V < 7,5 mA > 2,3 mJ > 25
typ. 100 typ. 4,0 GHz typ. 10 pF typ. 7 pF typ. 1,2 pF
120
handbook, halfpage
h
FE
80
40
0
0
0.8
1.6 3.22.4
Fig.4 Tj=25°C; VCE= 10 V; typical values.
MDA362
IC (A)
4.8
handbook, halfpage
f
T
(GHz)
3.2
1.6
0
0
0.8
1.6 3.22.4
IE (A)
Fig.5 VCB= 12,5 V; f = 500 MHz; tp=50µs;
Tj=25°C; typical values.
MDA363
August 1986 4
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