Philips BLU86 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLU86
UHF power transistor
Product specification
September 1991
Philips Semiconductors Product specification
UHF power transistor BLU86
FEATURES
• SMD encapsulation
• Emitter-ballasting resistors for
optimum temperature profile
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in mobile radio
equipment in the 900 MHz
communications band.
PINNING - SOT223
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
QUICK REFERENCE DATA
RF performance at T
≤ 60 °C in a common emitter class-B test circuit (see
s
note 1).
MODE OF OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
G
(dB)
p
(%)
c.w. narrow band 900 12.5 1 > 7 > 55
Note
1. T
= temperature at soldering point of collector tab.
s
PIN CONFIGURATION
alfpage
123
Top view
4
MSB002 - 1
handbook, halfpage
MBB012
c
b
e
η
c
Fig.1 Simplified outline and symbol.
September 1991 2
Philips Semiconductors Product specification
UHF power transistor BLU86
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
, I
C
C(AV)
I
CM
P
tot
T
stg
T
j
Note
= temperature at soldering point of collector tab.
1. T
s
collector-base voltage open emitter − 32 V
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current DC or average value − 200 mA
collector current peak value;
− 600 mA
f > 1 MHz
total power dissipation f > 1 MHz;
− 2W
Ts= 129 °C
(note 1)
storage temperature range −65 150 °C
operating junction temperature − 175 °C
3
10
handbook, halfpage
I
C
(mA)
2
10
10
1
10
Ts = 129 oC
VCE (V)
MRA241
2
10
Fig.2 DC SOAR.
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-s(DC)
from junction to soldering point P
=2W;
tot
23 K/W
Ts= 129 °C
September 1991 3
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