Philips blu45 12 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

BLU45/12

UHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

UHF power transistor BLU45/12

DESCRIPTION

N-P-N silicon planar epitaxial
transistor in SOT-119 envelope
primarily intended for use in mobile
radio transmitters in the 470 MHz
communications band.

FEATURES

• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.

• internal matching to achieve an
optimum wideband capability and

The transistor has a 6-lead flange
envelope with a ceramic cap. All
leads are isolated from the flange.

high power gain.

• gold metallization ensures
excellent reliability.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

=25°C in a common-emitter class-B circuit

h

CE

V

f

MHz

P

W

L

G

P

η

dB

narrow band; c.w. 12,5 470 45 > 4,8 > 55

PIN CONFIGURATION

PINNING

PIN DESCRIPTION

1 emitter

handbook, halfpage

1

2

2 emitter
3 base

3

4

4 collector
5 emitter
6 emitter

65

C

%

MSB006

Fig.1 Simplified outline, SOT119A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

UHF power transistor BLU45/12

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current

d.c. or average I

(peak value); f > 1 MHz I
Total power dissipation

at T

= 25 °C; f > 1 MHz P

mb

Storage temperature T
Operating junction temperature T

CBOM
CEO
EBO

C
CM

tot
stg
j

max. 36 V
max. 16,5 V
max. 4 V

max. 9 A
max. 27 A

max. 87 W

−65 to + 150 °C
max. 200 °C

160

handbook, halfpage

P

rf

(W)
120

80

40

I Continuous operation (f > 1 MHz).
II Short-time operation during mismatch (f > 1 MHz).

II

I

0

0

40

80 120 160

MDA335

Th (°C)

Fig.2 Power/temperature derating curves.

MAXIMUM THERMAL RESISTANCE

Dissipation = 54 W; T

amb

=25°C

From junction to mounting base (r.f. operation) R
From mounting base to heatsink R

200

th j-mb
th mb-h

max. 1,7 K/W
max. 0,2 K/W

August 1986 3