Philips BLU30-12 Datasheet

DATA SH EET

Product specification

January 1985

DISCRETE SEMICONDUCTORS

BLU30/12

UHF power transistor

January 1985 2

Philips Semiconductors Product specification

UHF power transistor BLU30/12

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the
470 MHz communications band.

FEATURES:

• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile

• gold metallization ensures
excellent reliability

• internal matching to achieve an
optimum wideband capability and
high power gain

The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.

QUICK REFERENCE DATA

Envelope SOT-119
Mode of operation class-B; c.w.
Collector-emitter voltage (d.c.) V

CE

12,5 V
Frequency f 470 MHz
Load power P

L

30 W

Power gain G

P

> 6,0 dB

Collector efficiency η

C

> 55 %

Heatsink temperature T

h

25 °C

PIN CONFIGURATION

Fig.1 Simplified outline, SOT119A.

handbook, halfpage

2

4

65

3

1

MSB006

PINNING

PIN DESCRIPTION

1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

January 1985 3

Philips Semiconductors Product specification

UHF power transistor BLU30/12

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

peak value V

CBOM

max. 36 V

Collector-emitter voltage (open base) V

CEO

max. 16,5 V

Emitter-base voltage (open collector) V

EBO

max. 4 V

Collector current

d.c. or average I

C

max. 6 A

(peak value); f > 1 MHz I

CM

max. 18 A

Total power dissipation

f > 1 MHz; T

mb

= 25 °CP

tot

(r.f.) max. 65 W

Storage temperature T

stg

−65 to + 150 °C

Operating junction temperature T

j

max. 200 °C

Fig.2 D.C. SOAR. R

th mb-h

= 0,2 K/W

handbook, halfpage

10

1

10

−1

MDA324

110

V

CE

(V)

I

C

(A)

10

2

Th = 70 °C

Tmb = 25 °C

Fig.3 Power/temperature derating curves

I Continuous operation (f > 1 MHz)
II Short-time operation during mismatch; (f > 1 MHz.

handbook, halfpage

04080

P

tot

(W)

Th (°C)

160

100

0

80

120

60

40

20

MDA325

II

I

THERMAL RESISTANCE

(dissipation = 45 W; T

mb

=25°C)

From junction to mounting base

(r.f. dissipation) R

th j-mb(r.f.)

max. 2,45 K/W

From mounting base to heatsink R

th mb-h

max. 0,2 K/W