Philips blu20 12 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BLU20/12
UHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
UHF power transistor BLU20/12
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the
470 MHz communications band.
FEATURES
• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile
• gold metallization ensures
The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.
excellent reliability.
• internal matching to achieve an
optimum wideband capability and
high power gain.
QUICK REFERENCE DATA
Envelope SOT-119
Mode of operation class-B; c.w.
Collector-emitter voltage (d.c.) V
CE
12,5 V
Frequency f 470 MHz
Load power P
Power gain G
Collector efficiency η
Heatsink temperature T
L
P
c
h
20 W
> 6,5 dB
> 55 %
25 °C
PIN CONFIGURATION
PINNING
PIN DESCRIPTION
1 emitter
handbook, halfpage
1
2
2 emitter
3 base
3
4
4 collector
5 emitter
6 emitter
65
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
UHF power transistor BLU20/12
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134).
Collector-base voltage (open emitter)
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current
d.c. or average I
(peak value); f > 1 MHz I
Total power dissipation
at T
= 25 °CP
mb
f > 1 MHz; T
= 25 °CP
mb
Storage temperature T
Operating junction temperature T
CBOM
CEO
EBO
C
CM
(d.c.) max. 38 W
tot
(r.f.) max. 44 W
tot
stg
j
max. 36 V
max. 16,5 V
max. 4 V
max. 4 A
max. 12 A
−65 to + 150 °C
max. 200 °C
CE
(V)
MDA313
80
handbook, halfpage
P
tot
(W)
60
III
40
20
2
10
0
040
I Continuous operation
II Continuous operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz)
II
I
Fig.3 Power/temperature derating curves
10
handbook, halfpage
I
C
(A)
1
−1
10
110
R
= 0,2 K/W
th mb-h
Tmb = 25 °C
Th = 70 °C
V
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 37 W; T
=25°C, i.e. Th=18°C)
mb
From junction to mounting base
(d.c. dissipation) R
(r.f. dissipation) R
From mounting base to heatsink R
80
th j-mb(d.c.)
th j-mb(r.f.)
th mb-h
MDA314
Th (°C)
160
120
max 4,6 K/W
max 4,1 K/W
max 0,2 K/W
August 1986 3
Philips Semiconductors Product specification
UHF power transistor BLU20/12
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-base breakdown voltage
I
= 25 mA; open emitter V
C
Collector-emitter breakdown voltage
IC = 50 mA; open base V
Emitter-base breakdown voltage
IE= 5 mA; open collector V
Collector cut-off current
VBE= 0; VCE=20V I
Second breakdown energy
L = 25 mH; f = 50 Hz; R
=10Ω E
BE
D.C. current gain
I
= 2,7 A; VCE=10V h
C
Collector capacitance at f = 1 MHz
I
= ie=0;VCB= 12,5 V C
E
Feed-back capacitance at f = 1 MHz
I
= 0; VCE= 12,5 V C
C
Collector-flange capacitance C
(BR)CBO
(BR)CEO
(BR)EBO
CES
SBR
FE
C
re
cf
> 36 V
> 16,5 V
> 4V
< 12,5 mA
> 5,3 mJ
> 15
typ. 60
typ. 53 pF
typ. 33 pF
typ. 3 pF
80
handbook, halfpage
h
FE
60
40
20
0
02 10
V
= 12.5 V
CE
10 V
46 8
MDA315
IC (A)
Fig.4 Tj=25°C; typ. values.
August 1986 4
160
handbook, halfpage
C
c
(pF)
120
80
40
0
048
Fig.5 IE=Ie= 0; f = 1 MHz; typ. values.
12
V
CB
MDA316
(V)
16
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