Philips blu11 sl DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

BLU11/SL

UHF power transistor

Product specification

July 1986

Philips Semiconductors Product specification

UHF power transistor BLU11/SL

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile transmitters in the 470 MHz
band.

FEATURES

• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.

• gold metallization ensures
excellent reliability.

• the device can be applied at a PL of
max. 1,5 W when it is mounted on a
printed wiring board (see Fig.6)
without an external heatsink.

The transistor has a 4-lead envelope
with a ceramic cap (SOT-122D). All
leads are isolated from the mounting
base.

QUICK REFERENCE DATA

R.F. performance in a common-emitter class-B circuit.

MODE OF OPERATION

narrow band; c.w. T

T

°C

= 25 12,5 470 2,5 > 10 > 55

mb

=25

(1)

T

a

V

CE

V

12,5 470 1,5 > 12 > 55

Note

1. Device mounted on a printed wiring board (see Fig.6).

f

MHz

P

W

L

G

p

dB

η

C

%

PIN CONFIGURATION

PINNING - SOT122D.

PIN DESCRIPTION

1 collector

handbook, halfpage

4

2 emitter
3 base

31

2

MSB055

4 emitter

Fig.1 Simplified outline. SOT122D.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

July 1986 2

Philips Semiconductors Product specification

UHF power transistor BLU11/SL

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current

d.c. or average I
(peak value), f > 1 MHz I

Total power dissipation

at Tmb≤ 90 °C; f > 1 MHz P
Storage temperature T
Operating junction temperature T

CBO
CEO
EBO

; I

C
CM

tot(rf)
stg
j

C(AV)

max. 36 V
max. 16 V
max. 3 V

max. 0,4 A
max. 1,2 A

max. 6 W

−65 to +150 °C

max. 200 °C

10

handbook, halfpage

P

tot(rf)
(W)

8

6

4

2

0

0

I Continuous r.f. operation (f > 1 MHz)
II Short-time r.f. operation during mismatch (f > 1 MHz)

II

I

40 80

Fig.2 Power/temperature derating curves.

THERMAL RESISTANCE

Dissipation = 4,5 W

From junction to ambient

(1)

at Ta=25°C; f > 1 MHz (r.f. operation) R
From junction to mounting base

at T

=25°C; f > 1 MHz (r.f. operation) R

mb

120

Tmb (°C)

th j-a (rf)

th j-mb (rf)

MDA306

160

max. 50 K/W

max. 15 K/W

Note

1. Device mounted on a printed wiring board (see Fig.6).

July 1986 3