Philips blt94 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D175

BLT94

UHF power transistor

Product speciﬁcation Supersedes data of 1997 Nov 04

1998 Jan 28

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT94

FEATURES

• Emitter ballasting resistors for an optimum temperature profile

• Gold metallization ensures excellent reliability.

PINNING

PIN DESCRIPTION

1, 4, 5, 8 emitter

2, 3 base 6, 7 collector

APPLICATIONS

• Common emitter class-AB and B operation in portable radio transmitters in the 900 MHz communication band.

handbook, halfpage

85

DESCRIPTION

NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A package.

14

Top view

MBK150

Fig.1 Simplified outline SOT409A.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

≤ 60 °C in a common emitter test circuit.

mb

f

(MHz)

V

(V)

CE

P

(W)

L

G

(dB)

p

(%)

CW, class-AB 900 7.5 6 ≥8 ≥50

typ. 10 typ. 60

η

C

1998 Jan 28 2

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT94

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

collector-base voltage open emitter − 20 V collector-emitter voltage open base − 10 V emitter-base voltage open collector − 3V collector current (DC) − 2.5 A total power dissipation Tmb≤ 60 °C − 13 W storage temperature −65 +150 °C operating junction temperature − 200 °C

thermal resistance from junction to

Tmb≤ 60 °C; P

= 13 W 8 K/W

tot

mounting base

10

handbook, halfpage

I

C

(A)

1

−1

10

11010

Tmb=60°C.

Fig.2 DC SOAR.

MGM525

V

(V)

CE

2

1998 Jan 28 3

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT94

CHARACTERISTICS

T

=25°C unless otherwise speciﬁed.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

collector-base breakdown voltage open emitter; IC=20mA 20 −−V collector-emitter breakdown voltage open base; IC=40mA 10 −−V emitter-base breakdown voltage open collector; IE=4mA 3 −−V collector leakage current VBE= 0; VCE= 7.5 V −−1mA DC current gain IC= 1.2 A; VCE=5V 25 −− collector capacitance IE=ie= 0; VCB= 7.5 V; f = 1 MHz − 24 − pF feedback capacitance IC= 0; VCE= 7.5 V; f = 1 MHz − 17 − pF

100

handbook, halfpage

h

FE

80

60

40

20

0

VCE= 5V; Tj=25°C. Measured under pulse conditions: tp≤ 300 µs; δ≤0.001.

0.4 0.8 1.2 1.6

0 2.0

MGM526

IC (A)

Fig.3 DC current gain as a function of collector

current; typical values.

50

handbook, halfpage

C

c

(pF)

40

30

20

10

0

020

IE=ie= 0; f = 1 MHz; Tj=25°C.

4 8 12 16

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

MGM527

VCB(V)

1998 Jan 28 4

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT94

APPLICATION INFORMATION

RF performance at T

≤ 60 °C in a common emitter test circuit (see Fig.7).

mb

MODE OF OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 900 7.5 50 6 ≥8 ≥50

typ. 10 typ. 55

Ruggedness in class-AB operation

The BLT94 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: CW, class-AB operation; V

η

G

MBK387

C

p

14

handbook, halfpage

G

p

(dB)

12

10

8

6

4

2

= 9 V; PL= 6 W and f = 900 MHz; Tmb≤ 60 °C.

CE

70

η

C

(%)

60

50

40

30

20

10

handbook, halfpage

P

L

(W)

8

6

4

2

MBK388

0

010

CW, class-AB operation; VCE= 7.5 V; ICQ=50mA; f = 900 MHz; T

2468

≤ 60 °C.

mb

P

0

(W)

L

Fig.5 Power gain and collector efficiency as

functions of load power; typical values.

1998 Jan 28 5

0

0 0.4 0.8 1.6

CW, class-AB operation; VCE= 7.5 V; ICQ=50mA; f = 900 MHz; T

mb

≤ 60 °C.

1.2 PD (W)

Fig.6 Load power as a function of drive power;

typical values.