Philips blt92 sl DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BLT92/SL
UHF power transistor
Product specification
May 1989
Philips Semiconductors Product specification
UHF power transistor BLT92/SL
DESCRIPTION
NPN silicon planar epitaxial transistor
primarily intended for use in handheld
radio stations in the 900 MHz
communications band.
This device has been designed
specifically for class-B operation.
FEATURES
• internal input matching capacitor
for a high power gain
• gold metallization ensures
excellent reliability
The transistor has a 4-lead studless
envelope with a ceramic cap
(SOT122D). All leads are isolated
from the mounting base.
PINNING
1 = collector
2 = emitter
3 = base
4 = emitter
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION V
=25°C in a common-emitter class-B circuit
mb
CE
(V)
f
(MHz)
P
(W)
L
G
p
(dB)
(%)
CW (class-B) 7.5 900 3.0 > 7.0 > 50
PIN CONFIGURATION
handbook, halfpage
4
31
2
MSB055
Fig.1 Simplified outline, SOT122D.
η
C
PRODUCT SAFETY This device incorporates beryllium oxide (BeO), the dust of which is toxic. The device is
entirely safe provided that the internal BeO disc is not damaged.
May 1989 2
Philips Semiconductors Product specification
UHF power transistor BLT92/SL
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current
DC or average I
(peak value); f > 800 MHz I
Total power dissipation
at T
< 120 °C; f > 800 MHz P
amb
Storage temperature range T
Operating junction temperature T
THERMAL RESISTANCE
Dissipation = 10 W; T
=25°C
mb
From junction to mounting base (f > 800 MHz) R
CBO
CEO
EBO
; I
C
C(AV)
CM
tot
stg
j
th j-mb(RF)
max. 20 V
max. 10 V
max. 3.0 V
max. 1.2 A
max. 3.6 A
max. 10 W
−65 to +150 °C
max. 200 °C
max. 6.0 K/W
20
handbook, halfpage
P
tot
(W)
16
12
8
4
0
0
(1) Short-time RF operation during mismatch (f > 800 MHz).
(2) Continuous RF operation (f > 800 MHz).
Fig.2 Total power dissipation as a function of temperature.
40 80 120
MDA297
(1)
(2)
160
Tmb (°C)
200
May 1989 3
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