Philips Semiconductors Product specification
UHF power transistor BLT82
FEATURES
• High efficiency
• High gain
• Internal pre-matched input.
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
operation for 900 MHz Time Division Multiple Axis
(TDMA) communication systems.
PINNING - SOT96-1
PIN SYMBOL DESCRIPTION
1, 8 b base
2, 4, 5, 7 e emitter
3, 6 c collector
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
≤ 60 °C in a common emitter test circuit (see Fig.5).
s
f
V
(MHz)
Pulsed, class-AB 900 6
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT96-1 (SO8) SMD package.
handbook, halfpage
58
b
41
MAM227
Fig.1 Simplified outline and symbol.
CE
(V)
P
(W)
3.5
L
G
p
(dB)
≥8 ≥50
typ. 10 typ. 65
2.8 ≥9 ≥57
c
e
η
(%)
C
1996 Feb 05 2
Philips Semiconductors Product specification
UHF power transistor BLT82
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 3.5 V
collector current (DC) − 1A
total power dissipation Ts=115°C; note 1 − 1.9 W
storage temperature −65 +150 °C
operating junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
10
handbook, halfpage
I
C
(A)
1
−1
10
1
Ts= 115°C.
10
Fig.2 DC SOAR.
VCE (V)
MGD207
2
10
1996 Feb 05 3
Philips Semiconductors Product specification
UHF power transistor BLT82
R
th j-s
(K/W)
10
10
−1
−2
1
10
δ = 0.75
−5
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0.00
handbook, full pagewidth
P
−4
10
−3
10
−2
10
10
Fig.3 Normalized thermal resistance as a function of pulse time.
MGD208
t
p
δ =
T
tp (s)
t
1
t
p
T
−1
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to
soldering point
P
= 1.9 W; Ts=115°C; note 1
tot
32 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 5 mA 20 −−V
collector-emitter breakdown voltage open base; IC=10mA 10 −−V
emitter-base breakdown voltage open collector; IE=1mA 3.5 −−V
collector leakage current VCE=6V; VBE=0 −−0.1 mA
DC current gain VCE=5V; IC= 100 mA 30 − 150
collector capacitance VCB=6V; IE=ie= 0; f = 1 MHz − 17 − pF
feedback capacitance VCE=6V; IC= 0; f = 1 MHz − 10 − pF
1996 Feb 05 4