Philips blt71 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D315
BLT71/8
UHF power transistor
Product specification
Supersedes data of 1996 Feb 06
1997 Oct 14
Philips Semiconductors Product specification
UHF power transistor BLT71/8
FEATURES
• High efficiency
• Very high gain
• Internal pre-matched input
• Low supply voltage.
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
operation for the 900 MHz communication band.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a SOT96-1 (SO8) plastic SMD package.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
≤ 60 °C in a common emitter test circuit.
s
f
V
(MHz)
CW, class-AB 900 4.8 1.2
PINNING - SOT96-1
PIN SYMBOL DESCRIPTION
1, 8 b base
2, 4, 5, 7 e emitter
3, 6 c collector
handbook, halfpage
CE
(V)
8
1
Top view MBK187
Fig.1 Simplified outline.
P
L
(W)
typ. 13 typ. 63
5
4
G
(dB)
p
η
(%)
≥11 ≥55
C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 16 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 500 mA
total power dissipation Ts=60°C; VCE≤ 6.5 V; note 1 − 2.9 W
storage temperature −65 +150 °C
operating junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 14 2
Philips Semiconductors Product specification
UHF power transistor BLT71/8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-s
thermal resistance from junction to
soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 0.5 mA 16 − V
collector-emitter breakdown voltage open base; IC=10mA 8 − V
emitter-base breakdown voltage open collector; IE= 0.1 mA 2.5 − V
collector leakage current VCE=8V; VBE=0 − 0.1 mA
DC current gain VCE=5V; IC= 100 mA 25 −
collector capacitance VCB= 4.8 V; IE=ie= 0; f = 1 MHz − 7pF
feedback capacitance VCE= 4.8 V; IC= 0; f = 1 MHz − 5pF
P
= 2.9 W; Ts=60°C; note 1 40 K/W
dis
handbook, halfpage
1
I
C
(A)
−1
10
−1
10
Ts= 115°C.
Fig.2 DC SOAR.
MBK263
(1)
110
VCE (V)
150
handbook, halfpage
h
FE
100
50
2
10
0
0 200 400 600 800
VCE= 4.8 V.
Measured under pulse conditions: tp≤ 300 µs; δ≤0.001.
MLD131
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
1997 Oct 14 3
Philips Semiconductors Product specification
UHF power transistor BLT71/8
APPLICATION INFORMATION
RF performance at T
≤ 60 °C in a common emitter test circuit.
s
MODE OF OPERATION
f
(MHz)
CW, class-AB 900 4.8 3 1.2
V
(V)
CE
I
CQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
C
≥11 ≥55
typ. 13 typ. 63
Ruggedness in class-AB operation
The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; V
16
handbook, halfpage
G
p
(dB)
12
8
4
= 6.5 V; ICQ= 3 mA; PL= 1.2 W; Ts=60°C.
CE
MGD191
80
η
η
C
G
p
(%)
60
40
20
C
2.0
handbook, halfpage
P
L
(W)
1.6
1.2
0.8
0.4
MGD192
0
0 0.4 2.0
VCE= 4.8 V; ICQ= 3 mA; f = 900 MHz.
0.8 1.2 1.6
PL (W)
0
Fig.4 Power gain and collector efficiency as
functions of load power; typical values.
1997 Oct 14 4
0
0 50 100 200
VCE= 4.8 V; ICQ= 3 mA; f = 900 MHz.
150
PIN (mW)
Fig.5 Load power as a function of input power;
typical values.
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