Philips BLT70 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLT70
UHF power transistor
Product specification
1996 Feb 06
Philips Semiconductors Product specification
UHF power transistor BLT70
FEATURES
• Very high efficiency
• Low supply voltage.
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
operation in the 900 MHz communication band.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223H SMD package.
PINNING - SOT223H
PIN SYMBOL DESCRIPTION
1 e emitter
2 b base
3 e emitter
4 c collector
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
≤ 60 °C in a common emitter test circuit (see Fig.7).
s
f
V
(MHz)
CW, class-AB 900 4.8 600 ≥6 ≥60
CE
(V)
handbook, halfpage
Top view
Fig.1 Simplified outline and symbol.
(mW)
4
123
P
L
G
p
(dB)
b
MAM043 - 1
η
(%)
c
e
C
1996 Feb 06 2
Philips Semiconductors Product specification
UHF power transistor BLT70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 16 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 250 mA
total power dissipation Ts=60°C; note 1 − 2.1 W
storage temperature −65 +150 °C
operating junction temperature − 175 °C
thermal resistance from junction to
soldering point
P
= 2.1 W; Ts=60°C; note 1
tot
55 K/W
Note to the “Limiting values” and “Thermal characteristics”
is the temperature at the soldering point of the collector pin.
1. T
s
Ts (
MGD197
200
o
C)
P
(W)
3
tot
2
1
0
0
handbook, halfpage
100
Fig.2 DC SOAR.
1996 Feb 06 3
Philips Semiconductors Product specification
UHF power transistor BLT70
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 0.5 mA 16 − V
collector-emitter breakdown voltage open base; IC=5mA 8 − V
emitter-base breakdown voltage open collector; IE= 0.2 mA 2.5 − V
collector leakage current VCE=7V; VBE=0 − 0.1 mA
DC current gain VCE= 4.8 V; IC= 100 mA 25 −
collector capacitance VCB= 4.8 V; IE=ie= 0; f = 1 MHz − 3.5 pF
feedback capacitance VCE= 4.8 V; IC= 0; f = 1 MHz − 2.5 pF
100
handbook, halfpage
h
FE
80
60
40
20
0
0 100 200
VCE= 4.8V; Tj=25°C.
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
MGD198
300
handbook, halfpage
4
C
c
(pF)
3
2
1
0
048 16
IE=ie= 0; f = 1 MHz; Tj=25°C.
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
MGD199
12
VCB (V)
1996 Feb 06 4
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