Philips BLT61 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D315
BLT61
UHF power transistor
Preliminary specification
Supersedes data of 1996 Feb 05
1998 Jan 28
Philips Semiconductors Preliminary specification
UHF power transistor BLT61
FEATURES
• High efficiency
• High gain
• Internal pre-matched input
• Low supply voltage.
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
operation for 900 MHz communication systems.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a SOT96-1(SO8) package.
QUICK REFERENCE DATA
RF performance at T
≤ 60 °C in a common emitter test circuit.
s
PINNING
PIN DESCRIPTION
1, 8 base
2, 4, 5, 7 emitter
3, 6 collector
, halfpage
Fig.1 Simplified outline (SOT96-1; SO8).
8
1
5
4
Top view MBK187
MODE OF OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 900 3.6 1.2 ≥10 ≥50
typ. 11.5 typ. 63
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 14 V
collector-emitter voltage open base − 7V
emitter-base voltage open collector − 3V
collector current − 0.8 A
total power dissipation Ts=60°C; note 1 − 4W
storage temperature −65 +150 °C
operating junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1998 Jan 28 2
Philips Semiconductors Preliminary specification
UHF power transistor BLT61
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-s
thermal resistance from junction to soldering point P
Note
is the temperature at the soldering point of the collector pin.
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 5 mA 14 − V
collector-emitter breakdown voltage open base; IC=10mA 7 − V
emitter-base breakdown voltage open collector; IE=1mA 3 − V
collector leakage current VBE= 0; VCE=5V − 0.01 mA
DC current gain IC= 0.2 A; VCE= 5 V 45 130
collector capacitance IE=ie= 0; VCB= 3.6 V; f = 1 MHz − tbf pF
feedback capacitance IC= 0; VCE= 3.6 V; f = 1 MHz − tbf pF
=4W; Ts=60°C; note 1 29 K/W
tot
handbook, halfpage
1
I
C
(A)
−1
10
110
Ts= 115°C.
Fig.2 DC SOAR.
MGM488
V
(V)
CE
1998 Jan 28 3
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