Philips BLT53 Datasheet
DATA SH EET
Product specification
May 1991
DISCRETE SEMICONDUCTORS
BLT53
UHF power transistor
May 1991 2
Philips Semiconductors Product specification
UHF power transistor BLT53
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability
• Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT122D
studless envelope with a ceramic cap.
It is designed for common emitter,
class-B operation in portable radio
transmitters in the 470 MHz
communications band. All leads are
isolated from the mounting flange.
PINNING - SOT122D
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
QUICK REFERENCE DATA
RF performance at T
mb
= 25 °C in a common emitter test circuit.
PIN CONFIGURATION
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
c
(%)
c.w. class-B 470 7.5 8 > 6 > 60
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
lfpage
2
31
4
MSB055
May 1991 3
Philips Semiconductors Product specification
UHF power transistor BLT53
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 20 V
V
CEO
collector-emitter voltage open base − 10 V
V
EBO
emitter-base voltage open collector − 3V
I
C
, I
C(AV)
collector current DC or average value − 2.5 A
I
CM
collector current peak value
f > 1 MHz
− 7.5 A
P
tot
total power dissipation RF operation;
Tmb = 25 °C
− 35.5 W
T
stg
storage temperature range −65 150 °C
T
j
junction operating temperature − 200 °C
Fig.2 DC SOAR.
handbook, halfpage
10
2
MCD192
10
VCE (V)
I
C
(A)
1
10
−1
10
1
Tmb = 25 oC
70 oC
Fig.3 Power derating curve.
(1) Continuous DC operation.
(2) Continuous RF operation (f > 1 MHz).
(3) Short time operation during mismatch (f > 1 MHz).
handbook, halfpage
04080
P
tot
(W)
T
mb
(
o
C)
160
50
0
MCD193
120
40
30
20
10
(1)
(3)
(2)
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb(RF)
from junction to mounting base P
tot
= 35.5 W;
Tmb = 25 °C
4.9 K/W
May 1991 4
Philips Semiconductors Product specification
UHF power transistor BLT53
CHARACTERISTICS
T
j
= 25 °C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage open emitter;
IC = 20 mA
20 −−V
V
(BR)CEO
collector-emitter breakdown voltage open base;
IC = 40 mA
10 −−V
V
(BR)EBO
emitter-base breakdown voltage open collector;
IE = 4 mA
3 −−V
I
CES
collector-emitter leakage current VBE = 0;
VCE = 10 V
−−1mA
h
FE
DC current gain VCE = 5 V;
IC = 1.2 A
25 −−
f
T
transition frequency VCE = 7.5 V;
IE = 1.6 A
− 3.9 − GHz
C
c
collector capacitance VCB = 7.5 V;
IE = Ie = 0;
f = 1 MHz
− 24 − pF
C
re
feedback capacitance VCE = 7.5 V;
IC = 0;
f = 1 MHz
− 17 − pF
C
c-mb
collector-mounting base capacitance f = 1 MHz − 1.2 − pF
Fig.4 DC current gain as a function of collector
current, typical values.
VCE = 5 V.
handbook, halfpage
0
024
h
FE
IC (A)
6
80
60
20
40
MCD194
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
IE = ie = 0; f = 1 MHz.
handbook, halfpage
048
C
c
(pF)
VCB (V)
12
50
0
10
MCD195
40
30
20
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