Philips BLT52 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D175
BLT52
UHF power transistor
Product specification
Supersedes data of 1997 Oct 15
1998 Jan 28
Philips Semiconductors Product specification
UHF power transistor BLT52
FEATURES
• Emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-B operation in portable radio
transmitters in the 470 MHz communication band.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a ceramic SOT409A SMD package.
QUICK REFERENCE DATA
RF performance at T
≤ 60 °C in a common emitter test circuit.
mb
PINNING
PIN DESCRIPTION
1, 4, 5, 8 emitter
2, 3 base
6, 7 collector
handbook, halfpage
Fig.1 Simplified outline SOT409A.
85
14
Top view
MBK150
MODE OF OPERATION
f
(MHz)
CW, class-B 470
V
(V)
CE
P
(W)
L
7.5 7
63
G
(dB)
p
η
(%)
C
≥8 ≥50
typ. 9.5 typ. 65
≥8≥50
typ. 9.5 typ. 55
1998 Jan 28 2
Philips Semiconductors Product specification
UHF power transistor BLT52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 3V
collector current (DC) − 2.5 A
total power dissipation Tmb≤ 60 °C − 13 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to mounting base P
= 13 W; Tmb≤ 60 °C 8 K/W
tot
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
Tmb=60°C.
Fig.2 DC SOAR.
MGM485
V
(V)
CE
2
1998 Jan 28 3
Philips Semiconductors Product specification
UHF power transistor BLT52
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC=20mA 20 −−V
collector-emitter breakdown voltage open base; IC=40mA 10 −−V
emitter-base breakdown voltage open collector; IE=4mA 3 −−V
collector leakage current VBE= 0; VCE= 7.5 V −−1mA
DC current gain IC= 1.2 A; VCE=5V 25 −−
collector capacitance IE=ie= 0; VCB= 7.5 V; f = 1 MHz − 24 − pF
feedback capacitance IC= 0; VCE= 7.5 V; f = 1 MHz − 17 − pF
100
handbook, halfpage
h
FE
80
60
40
20
0
VCE= 5V; Tj=25°C.
Measured under pulse conditions: tp≤ 300 µs; δ≤0.001.
0.4 0.8 1.2 1.6
0 2.0
MGM486
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
50
handbook, halfpage
C
c
(pF)
40
30
20
10
0
020
IE=ie= 0; f = 1 MHz; Tj=25°C.
4 8 12 16
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
MGM487
V
CB
(V)
1998 Jan 28 4
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