Philips BLT50 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLT50
UHF power transistor
Product specification
April 1991
Philips Semiconductors Product specification
UHF power transistor BLT50
FEATURES
• SMD encapsulation
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in hand-held radio
equipment in the 470 MHz
communications band.
PINNING - SOT223
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
QUICK REFERENCE DATA
RF performance at T
≤ 60 °C in a common emitter class-B test circuit
s
(note 1).
MODE OF OPERATION f (MHz) V
(V) PL (W) Gp (dB) ηc (%)
CE
c.w. narrow band 470 7.5 1.2 > 10 > 55
Note
1. T
= temperature at soldering point of collector tab.
s
PIN CONFIGURATION
ge
123
Top view
4
MSB002 - 1
handbook, halfpage
MBB012
c
b
e
Fig.1 Simplified outline and symbol.
April 1991 2
Philips Semiconductors Product specification
UHF power transistor BLT50
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
, I
C
C(AV)
I
CM
P
tot
T
stg
T
j
Note
= temperature at soldering point of collector tab.
1. T
s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 3V
collector current DC or average value − 500 mA
collector current peak value
− 1.5 A
f > 1 MHz
total power dissipation f > 1 MHz;
− 2W
Ts = 103 °C
(note 1)
storage temperature range −65 150 °C
operating junction temperature − 175 °C
handbook, halfpage
1
I
C
(A)
0.5
0.2
0.1
1
Ts= 103°C.
Fig.2 DC SOAR.
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-s(DC)
MEA217
2
10
VCE (V)
10
from junction to soldering point P
= 2 W; Ts = 103 °C 36 K/W
tot
April 1991 3
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