Philips BLT13 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLT13
UHF power transistor
Preliminary specification
File under Discrete Semiconductors, SC08b
1996 Apr 12
Philips Semiconductors Preliminary specification
Fig.1 Simplified outline and symbol.
handbook, halfpage
41
58
e
c
b
MAM227
QUICK REFERENCE DATA
RF performance at Ts≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Pulsed, class-AB 1800 6 2 ≥6 ≥50
UHF power transistor BLT13
FEATURES
• High efficiency
• High gain
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT96-1 (SO8) SMD package.
• Internal pre-matched input.
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
operation for 1.8 GHz Time Division Multiple Access
(TDMA) communication systems.
PINNING - SOT96-1
PIN SYMBOL DESCRIPTION
1, 8 b base
2, 4, 5, 7 e emitter
3, 6 c collector
1996 Apr 12 2
Philips Semiconductors Preliminary specification
UHF power transistor BLT13
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 1 A
total power dissipation Ts= 130 °C; note 1 − 1 W
storage temperature −65 +150 °C
operating junction temperature − 175 °C
thermal resistance from junction to
soldering point
P
= 1 W; Ts= 130 °C; note 1
tot
45 K/W
Note to the “Limiting values” and “Thermal characteristics”
1. T
is the temperature at the soldering point of the collector pin.
s
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 5 mA 20 − V
collector-emitter breakdown voltage open base; IC= 10 mA 10 − V
emitter-base breakdown voltage open collector; IE= 1 mA 2.5 − V
collector leakage current VCE= 6 V; VBE= 0 − 0.1 mA
DC current gain VCE= 5 V; IC= 100 mA 30 150
collector capacitance VCB= 6 V; IE= ie= 0; f = 1 MHz − 8 pF
feedback capacitance VCE= 6 V; IC= 0; f = 1 MHz − 6 pF
1996 Apr 12 3
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