Philips BLS3135-65 Datasheet

DATA SH EET

Product specification
Supersedes data of 1999 May 01

1999 Aug 16

DISCRETE SEMICONDUCTORS

BLS3135-65

Microwave power transistor

ook, halfpage

M3D259

1999 Aug 16 2

Philips Semiconductors Product specification

Microwave power transistor BLS3135-65

FEATURES

• Suitable for short and medium pulse applications

• Internal inputand output matching networks for an easy

circuit design

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicellgeometry improves power sharing andreduces
thermal resistance.

APPLICATIONS

• Commonbaseclass-Cpulsedpoweramplifiersforradar
applications in the 3.1 to 3.5 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave powertransistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.

PINNING - SOT422A

PIN DESCRIPTION

1 collector
2 emitter
3 base; connected to flange

Fig.1 Simplified outline.

handbook, halfpage

1

2

33

MBK051

QUICK REFERENCE DATA

RF performance at Th=25°C in a common base class-C test circuit.

MODE OF OPERATION

f

(GHz)

V

CB

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

Pulsed, class-C 3.1 to 3.5 40 65 ≥7 ≥35

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1999 Aug 16 3

Philips Semiconductors Product specification

Microwave power transistor BLS3135-65

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

T

j

=25°C unless otherwise specified.

APPLICATION INFORMATION

RF performance at T

h

=25°C in a common-base test circuit.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 75 V

V

CES

collector-emitter voltage RBE=0 − 75 V

V

EBO

emitter-base voltage open collector − 2V

I

CM

peak collector current tp≤ 100 µs; δ≤10% − 8A

P

tot

total power dissipation tp= 100 µs; δ = 10%; Tmb=25°C − 200 W

T

stg

storage temperature −65 +200 °C

T

j

operating junction temperature − 200 °C

T

sld

soldering temperature up to 0.2 mm from ceramic cap;

t ≤ 10 s

− 235 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th j-h

thermal impedance from junction to heatsink

t

p

= 100 µs; δ = 10%; note 1 0.57 K/W

t

p

= 300 µs; δ = 10%; note 1 0.74 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

collector-base breakdown voltage IC= 20 mA; open emitter 75 − V

V

(BR)CES

collector-emitter breakdown voltage IC= 20 mA; VBE=0 75 − V

I

CBO

collector leakage current VCB=40V; IE=0 − 2mA

I

CES

collector leakage current VCE=40V; VBE=0 − 4mA

I

EBO

emitter leakage current VEB= 1.5 V; IC=0 − 0.4 mA

h

FE

DC current gain VCB=5V; IC=2A 40 −

MODE OF OPERATION

f

(GHz)

V

CE

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

Class-C; t

p

= 100 µs; δ = 10% 3.1 to 3.5 40 ≥65 ≥7 ≥35

1999 Aug 16 4

Philips Semiconductors Product specification

Microwave power transistor BLS3135-65

Fig.2 Loadpowerasafunctionofthedrivepower;

typical values.

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

handbook, halfpage

4

(2)
(3)

P

L

(W)

6

PD (W)

812

100

0

80

10

60

40

20

MCD750

(1)

Fig.3 Power gain as a function of load power;

typical values.

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

handbook, halfpage

0 100

10

0

2

4

6

8

20

G

p

(dB)

PL (W)

40 60 80

MCD751

(2)

(3)

(1)

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

Fig.4 Collector efficiency as a function of load

power; typical values.

handbook, halfpage

0 100

50

0

10

20

30

40

20

η

C

(%)

PL (W)

40 60 80

MCD752

(2)

(1)

(3)