Philips BLS3135-10 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D324

BLS3135-10

Microwave power transistor

Product specification 2000 Feb 01

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

FEATURES

• Suitable for short and medium pulse applications

• Internal inputand output matching networks for an easy

circuit design

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicellgeometry improves power sharing andreduces
thermal resistance.

APPLICATIONS

• Common base class-C pulsed power amplifier for radar
applications in the 3.1 to 3.5 GHz range.

DESCRIPTION

NPN silicon planar epitaxial microwave powertransistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.

PINNING - SOT445C

PIN DESCRIPTION

1 collector
2 emitter
3 base; connected to flange

handbook, halfpage

Top view

Fig.1 Simplified outline.

1

3

2

MBK132

QUICK REFERENCE DATA

RF performance at Th=25°C in a common base class-C test circuit.

MODE OF OPERATION

f

(GHz)

V

(V)

CB

P

(W)

L

G

(dB)

p

η

C

(%)

Pulsed class-C 3.1 to 3.5 40 ≥10 typ. 9 typ. 40

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

2000 Feb 01 2

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

CM

P

tot

T

stg

T

j

T

sld

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th j-h

collector-base voltage open emitter − 75 V
collector-emitter voltage RBE=0 − 75 V
emitter-base voltage open collector − 2V
peak collector current tp≤ 100 µs; δ≤10% − 1.5 A
total power dissipation tp= 100 µs; δ = 10%; Th=25°C − 34 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s − 235 °C

thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 5.2 K/W

= 200 µs; δ = 10%; note 1 5.8 K/W

t

p

t

= 300 µs; δ = 10%; note 1 6.3 K/W

p

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

V

(BR)CES

I

CBO

I

CES

I

EBO

h

FE

collector-base breakdown voltage IC= 2.5 mA; open emitter 75 − V
collector-emitter breakdown voltage IC= 2.5 mA; VBE=0 75 − V
collector leakage current VCB=40V; IE=0 − 0.3 mA
collector leakage current VCE=40V; VBE=0 − 0.5 mA
emitter leakage current VEB= 1.5 V; IC=0 − 0.1 mA
DC current gain VCE=5V; IC= 0.25 A 40 −

APPLICATION INFORMATION

RF performance at T

MODE OF OPERATION

Class-C; t

= 100 µs; δ = 10% 3.1 to 3.5 40 ≥10 ≥7.5

p

=25°C in a common-base test circuit.

h

f

(GHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

≥35

typ. 9

typ. 40

2000 Feb 01 3

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

12

handbook, halfpage

P

L

(W)

8

4

0

0

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

(1) (2) (3)

0.5 1.5

1

PD (W)

Fig.2 Load power as a function of drive power;

typical values.

MCD856

12

handbook, halfpage

G

p

(dB)

8

4

0

04 12

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

8

PL (W)

Fig.3 Power gain as a function of load power;

typical values.

MCD857

(1)
(2)

(3)

50

handbook, halfpage

η

C

(%)

40

30

20

10

0

04 12

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

8

PL (W)

Fig.4 Collector efficiency as a function of load

power; typical values.

MCD858

(3)

MCD859

12

handbook, halfpage

(2)
(1)

G

(dB)

VCB= 40 V; class-C; PL= 10 W; tp= 100 µs; δ = 10%.

G

p

p

8

return
losses

4

0

3 3.2 3.4 3.6

f (GHz)

24

return

losses

(dB)

16

8

0

Fig.5 Power gain and input return losses as

functions of frequency; typical values.

2000 Feb 01 4