Philips bls3135 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
halfpage
M3D259
BLS3135-20
Microwave power transistor
Product specification 2000 Feb 01
Philips Semiconductors Product specification
Microwave power transistor BLS3135-20
FEATURES
• Suitable for short and medium pulse applications
• Internal inputand output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicellgeometry improves power sharing andreduces
thermal resistance.
APPLICATIONS
• Commonbaseclass-Cpulsedpoweramplifiersforradar
applications in the 3.1 to 3.5 GHz range.
DESCRIPTION
NPN silicon planar epitaxial microwave powertransistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
PINNING - SOT422A
PIN DESCRIPTION
1 collector
2 emitter
3 base; connected to flange
handbook, halfpage
Fig.1 Simplified outline.
1
33
2
MBK051
QUICK REFERENCE DATA
RF performance at Th=25°C in a common base class-C test circuit.
MODE OF OPERATION
f
(GHz)
V
(V)
CB
P
(W)
L
G
(dB)
p
η
C
(%)
Pulsed, class-C 3.1 to 3.5 40 20 typ. 8 typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Feb 01 2
Philips Semiconductors Product specification
Microwave power transistor BLS3135-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 75 V
collector-emitter voltage RBE=0 − 75 V
emitter-base voltage open collector − 2V
peak collector current tp≤ 100 µs; δ≤10% − 2A
total power dissipation tp= 100 µs; δ = 10%; Tmb=25°C − 80 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature up to 0.2 mm from ceramic cap;
− 235 °C
t ≤ 10 s
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Z
th j-h
thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 2 K/W
t
= 200 µs; δ = 10%; note 1 2.45 K/W
p
t
= 300 µs; δ = 10%; note 1 2.75 K/W
p
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CES
I
CBO
I
CES
I
EBO
h
FE
collector-base breakdown voltage IC= 15 mA; open emitter 75 − V
collector-emitter breakdown voltage IC= 15 mA; VBE=0 75 − V
collector leakage current VCB= 40 V; IE=0 − 0.5 mA
collector leakage current VCE= 40 V; VBE=0 − 1mA
emitter leakage current VEB= 1.5 V; IC=0 − 0.1 mA
DC current gain VCB=5V; IC= 1.5 A 40 −
APPLICATION INFORMATION
RF performance at T
=25°C in a common-base test circuit.
h
MODE OF OPERATION
Class-C; t
= 100 µs; δ = 10% 3.1 to 3.5 40 ≥20
p
f
(GHz)
V
(V)
CE
2000 Feb 01 3
P
L
(W)
typ. 22
G
p
(dB)
≥7
typ. 8
η
C
(%)
≥35
typ. 40
Philips Semiconductors Product specification
Microwave power transistor BLS3135-20
25
handbook, halfpage
P
L
(W)
20
15
10
5
0
01
VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
24
(1) (2)
3
PD (W)
Fig.2 Load power as a function of drive power;
typical values.
MCD863
(3)
10
handbook, halfpage
G
p
(dB)
8
6
4
2
0
025
VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
5101520
P
Fig.3 Power gain as a function of load power;
typical values.
MCD864
(1)
(2)
(3)
(W)
L
50
handbook, halfpage
η
C
(dB)
40
(2)
30
20
10
0
025
VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
5101520
(3)
P
Fig.4 Collector efficiency as a function of load
power; typical values.
MCD865
(1)
(W)
L
10
handbook, halfpage
G
p
(dB)
VCB= 40 V; class-C; PL= 20 W; tp= 100 µs; δ = 10%.
G
p
8
η
C
6
4
2
0
3
3.2 3.4
MCD866
f (GHz)
Fig.5 Power gain and efficiency as functions of
frequency; typical values.
3.6
50
(%)
40
30
20
10
0
η
C
2000 Feb 01 4
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