Philips BLS2731-50 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLS2731-50

Microwave power transistor

Product specification
Supersedes data of 1997 Nov 05

1998 Jan 30

Philips Semiconductors Product specification

Microwave power transistor BLS2731-50

FEATURES

• Suitable for short and medium pulse applications

• Internal input and output matching networks for an easy

circuit design

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicell geometry improves power sharing and reduces
thermal resistance.

APPLICATIONS

• Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.

PINNING - SOT422A

PIN DESCRIPTION

1 collector
2 emitter
3 base; connected to flange

handbook, halfpage

Fig.1 Simplified outline.

1

33

2

MBK051

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common base class-C test circuit.

h

f

(GHz)

V

(V)

CB

P

(W)

L

G

p

(dB)

η

(%)

C

Pulsed, class-C 2.7 to 3.1 40 60 typ. 9 typ. 40

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1998 Jan 30 2

Philips Semiconductors Product specification

Microwave power transistor BLS2731-50

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

CM

P

tot

T

stg

T

j

T

sld

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 75 V
collector-emitter voltage RBE=0 − 75 V
emitter-base voltage open collector − 2V
peak collector current tp≤ 100 µs; δ≤10% − 6A
total power dissipation tp= 100 µs; δ = 10%; Tmb=25°C − 80 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature up to 0.2 mm from ceramic cap;

− 235 °C

t ≤ 10 s

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th j-h

thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 0.3 K/W

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CES

I

CBO

I

CES

I

EBO

h

FE

C

c

collector-base breakdown voltage IC= 15 mA; open emitter 75 −−V
collector-emitter breakdown voltage IC= 15 mA; VBE=0 75 −−V
collector leakage current VCB= 40 V; IE=0 −−1.5 mA
collector leakage current VCE= 40 V; VBE=0 −−3mA
emitter leakage current VEB= 1.5 V; IC=0 −−0.3 mA
DC current gain VCB=5V; IC= 1.5 A 40 −−
collector capacitance (die only) VCE=1V; IE=ie=0;

− 30 − pF

f = 1 MHz

APPLICATION INFORMATION

RF performance at T

=25°C in a common-base test circuit.

h

MODE OF OPERATION

Class-C; t

= 100 µs; δ = 10% 2.7 to 3.1 40 ≥50

p

f

(GHz)

V

(V)

CE

1998 Jan 30 3

P

L

(W)

typ. 60

G

p

(dB)

≥8

typ. 9

η

C

(%)

≥35

typ. 40