Philips BLS2731-20 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D324
BLS2731-20
Microwave power transistor
Product specification
Supersedes data of 1998 Mar 06
1998 Nov 25
Philips Semiconductors Product specification
Microwave power transistor BLS2731-20
FEATURES
• Suitable for short and medium pulse applications
• Internal input and output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.
PINNING - SOT445C
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
handbook, halfpage
Top view
Fig.1 Simplified outline.
1
3
2
MBK132
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common base class-C test circuit.
h
f
(GHz)
V
(V)
CB
P
(W)
L
G
p
(dB)
η
(%)
C
Pulsed class-C 2.7 to 3.1 40 25 typ. 10 typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Nov 25 2
Philips Semiconductors Product specification
Microwave power transistor BLS2731-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 75 V
collector-emitter voltage RBE=0 − 75 V
emitter-base voltage open collector − 2V
peak collector current tp≤ 100 µs; δ≤10% − 3A
total power dissipation tp= 100 µs; δ = 10%;
− 270 W
Tmb=25°C
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature up to 0.2 mm from ceramic cap;
− 235 °C
t ≤ 10 s
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Z
th j-h
thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 0.65 K/W
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CES
collector-base breakdown voltage IC= 5 mA; open emitter 75 −−V
collector-emitter breakdown
IC= 5 mA; VBE=0 75 −−V
voltage
I
CBO
I
CES
I
EBO
h
FE
C
c
collector leakage current VCB= 40 V; IE=0 −−0.5 mA
collector leakage current VCE= 40 V; VBE=0 −−0.5 mA
emitter leakage current VEB= 1.5 V; IC=0 −−0.1 mA
DC current gain VCB=5V; IC= 0.5 A 40 −−
collector capacitance (die only) VCE=1V; IE=ie= 0; f = 1 MHz − 10 − pF
APPLICATION INFORMATION
RF performance at T
=25°C in a common-base test circuit.
h
MODE OF OPERATION
Class-C; t
= 100 µs; δ = 10% 2.7 to 3.1 40 ≥20
p
f
(GHz)
V
(V)
1998 Nov 25 3
CE
P
L
(W)
typ. 25
G
p
(dB)
≥9
typ. 10
η
C
(%)
≥35
typ. 40
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