Philips BLS2731-110 Datasheet

DATA SH EET

Product specification
Supersedes data of 1997 Nov 05

1998 Jan 30

DISCRETE SEMICONDUCTORS

BLS2731-110

Microwave power transistor

1998 Jan 30 2

Philips Semiconductors Product specification

Microwave power transistor BLS2731-110

FEATURES

• Suitable for short and medium pulse applications

• Internal input and output matching networks for an easy

circuit design

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicell geometry improves power sharing and reduces
thermal resistance.

APPLICATIONS

• Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT423A) with the common base connected to the
flange.

PINNING - SOT423A

PIN DESCRIPTION

1 collector
2 emitter
3 base; connected to flange

Fig.1 Simplified outline.

book, halfpage

1

2

3

3

MBK052

QUICK REFERENCE DATA

RF performance at T

h

=25°C in a common base class-C test circuit.

MODE OF OPERATION

f

(GHz)

V

CB

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

Pulsed class-C 2.7 to 3.1 40 >110 >7 >35

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1998 Jan 30 3

Philips Semiconductors Product specification

Microwave power transistor BLS2731-110

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

T

j

=25°C unless otherwise specified.

APPLICATION INFORMATION

RF performance at T

h

=25°C in a common base test circuit.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 75 V

V

CES

collector-emitter voltage RBE=0 − 75 V

V

EBO

emitter-base voltage open collector − 2V

I

CM

peak collector current tp≤ 100 µs; δ≤10% − 12 A

P

tot

total power dissipation tp= 100 µs; δ = 10%; Tmb=25°C − 500 W

T

stg

storage temperature −65 +200 °C

T

j

operating junction temperature − 200 °C

T

sld

soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s − 235 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th j-h

thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 0.24 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

collector-base breakdown voltage IC= 30 mA; open emitter 75 − V

V

(BR)CES

collector-emitter breakdown voltage IC= 30 mA; VBE=0 75 − V

I

CBO

collector leakage current VCB=40V; IE=0 − 3mA

I

CES

collector leakage current VCE=40V; VBE=0 − 6mA

I

EBO

emitter leakage current VEB= 1.5 V; IC=0 − 0.6 mA

h

FE

DC current gain VCE=5V; IC= 3 A 40 100

MODE OF OPERATION

f

(GHz)

V

CE

(V)

P

L

(W)

G

P

(dB)

η

C

(%)

Class-C; tp= 100 µs; δ = 10%

2.7 to 3.1 40 ≥110 ≥7 ≥35

2.7 to 2.9 40 typ. 130 typ. 8 typ. 42

2.9 to 3.1 40 typ. 120 typ. 7.5 typ. 40

1998 Jan 30 4

Philips Semiconductors Product specification

Microwave power transistor BLS2731-110

Fig.2 Power gain and efficiency as functions of

frequency; typical values.

VCE= 40V; class-C; tp= 100µs; δ = 10%.

handbook, halfpage

2.7 2.8 2.9

G

p

(dB)

G

p

3.1

f (GHz)

10

0

8

3

6

4

2

η

C

(%)

η

C

50

0

40

30

20

10

MBK284

VCE= 40 V; class-C; tp= 100 µs; δ = 10%.

Fig.3 Load power as a function of drive power;

typical values.

handbook, halfpage

10 12 14 20

P

L

(W)

PD (W)

18

140

0

40

20

120

16

2.9 GHz

2.7

3.1

100

80

60

MBK285

Fig.4 Input impedance as function of frequency

(series components); typical values.

VCB= 40 V; class-C; PL= 110 W.

handbook, halfpage

2.6

12

8

4

0

2.8 3 3.2

MGM538

f (GHz)

Z

i

(Ω)

r

i

x

i

Fig.5 Load impedance as function of frequency

(series components); typical values.

VCB= 40 V; class-C; PL= 110 W.

handbook, halfpage

2.6 2.8 3 3.2

8

4

−4

−8

0

MGM539

f (GHz)

Z

L

(Ω)

X

L

R

L