Philips BLS2731-10 Datasheet
DATA SH EET
Product specification
Supersedes data of 1998 Mar 06
1998 Nov 25
DISCRETE SEMICONDUCTORS
BLS2731-10
Microwave power transistor
M3D324
1998 Nov 25 2
Philips Semiconductors Product specification
Microwave power transistor BLS2731-10
FEATURES
• Suitable for short and medium pulse applications
• Internal input and output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
APPLICATIONS
• Common base class-C pulsed power amplifier for radar
applications in the 2.7 to 3.1 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.
PINNING - SOT445C
PIN DESCRIPTION
1 collector
2 emitter
3 base; connected to flange
Fig.1 Simplified outline.
handbook, halfpage
MBK132
Top view
1
3
2
QUICK REFERENCE DATA
RF performance at T
h
=25°C in a common base class-C test circuit.
MODE OF OPERATION
f
(GHz)
V
CB
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Pulsed class-C 2.7 to 3.1 40 12.5 typ. 10 typ. 45
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Nov 25 3
Philips Semiconductors Product specification
Microwave power transistor BLS2731-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 75 V
V
CES
collector-emitter voltage RBE=0 − 75 V
V
EBO
emitter-base voltage open collector − 2V
I
CM
peak collector current tp≤ 100 µs; δ≤10% − 1.5 A
P
tot
total power dissipation tp= 100 µs; δ = 10%; Tmb=25°C − 145 W
T
stg
storage temperature −65 +200 °C
T
j
operating junction temperature − 200 °C
T
sld
soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s − 235 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Z
th j-h
thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 1.2 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage IC= 2.5 mA; open emitter 75 −−V
V
(BR)CES
collector-emitter breakdown voltage IC= 2.5 mA; VBE=0 75 −−V
I
CBO
collector leakage current VCB= 40 V; IE=0 −−0.3 mA
I
CES
collector leakage current VCE= 40 V; VBE=0 −−0.5 mA
I
EBO
emitter leakage current VEB= 1.5 V; IC=0 −−0.1 mA
h
FE
DC current gain VCE=5V; IC= 0.25 A 40 −−
C
c
collector capacitance (die only) VCE=1V; IE=ie=0;
f = 1 MHz
− 10 − pF
1998 Nov 25 4
Philips Semiconductors Product specification
Microwave power transistor BLS2731-10
APPLICATION INFORMATION
RF performance at T
h
=25°C in a common-base test circuit.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Class-C; t
p
= 100 µs; δ = 10% 2.7 to 3.1 40 ≥10
typ. 12.5
≥9
typ. 10
≥35
typ. 45
Fig.2 Power gain as a function of load power;
typical values.
VCB= 40V; class-C; tp= 100 µs; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
04812
16
12
G
p
(dB)
PL (W)
4
0
8
MDA227
(1)
(2)
(3)
VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 3.1 GHz.
(3) f = 2.9 GHz.
Fig.3 Collector efficiency as a function of load
power; typical values.
handbook, halfpage
0
(1)
(2)
(3)
η
C
(%)
60
40
PL (W)
20
0
4812
MDA228
Loading...