Philips BLF900-110, BLF900S-110 Technical data
BLF900-110
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF900-110; BLF900S-110
Base station LDMOS transistors
Product specification |
|
2004 Feb 04 |
|||||
Supersedes data of 2003 Sep 22 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Philips Semiconductors |
Product specification |
|
|
Base station LDMOS transistors |
BLF900-110; BLF900S-110 |
|
|
|
|
FEATURES
∙Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V, frequency of 881.5 MHz
and IDQ of 700 mA; adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:
APPLICATIONS
∙RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the
800 to 1000 MHz frequency range.
–Output power = 24 W (AV)
–Gain = 15 dB
–Efficiency = 27%
–ACPR = −45 dBc at 750 kHz and BW = 30 kHz.
∙110 W CW performance
∙Easy power control
∙Excellent ruggedness
∙High power gain
∙Excellent thermal stability
∙Designed for broadband operation (800 to 1000 MHz)
∙Internally matched for ease of use.
PINNING - SOT502A
PIN |
DESCRIPTION |
|
|
1 |
drain |
|
|
2 |
gate |
|
|
3 |
source; connected to flange |
|
|
DESCRIPTION
110 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B
PIN |
DESCRIPTION |
|
|
1 |
drain |
|
|
2 |
gate |
|
|
3 |
source; connected to flange |
|
|
handbook, halfpage |
1 |
|
|
|
|
|
|
|
|
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
3 |
|
|
|
2 |
3 |
|
|
|
|
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Top view |
|
MBK394 |
|
|
|
|
Top view |
MBL105 |
|
|||
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
Leads are gold-plated. |
|
|
|
|
|
|
Fig.1 Simplified outline SOT502A (BLF900-110). |
|
|
Fig.2 Simplified outline SOT502B (BLF900S-110). |
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
QUICK REFERENCE DATA |
|
|
|
|
|
|
|
|
|
|
|
|
Typical RF performance at Th = 25 °C in a common source test circuit. |
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
MODE OF OPERATION |
|
f |
|
VDS |
|
PL |
Gp |
|
ηD |
|
d3 |
ACPR 750 |
|
(MHz) |
|
(V) |
|
(W) |
(dB) |
|
(%) |
|
(dBc) |
(dBc) |
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
2-tone, class-AB |
f1 = 890.0; f2 = 890.1 |
|
27 |
|
100 (PEP) |
17 |
|
38 |
|
−33 |
− |
|
CDMA (IS95) |
|
881.5 |
|
27 |
|
24 (AV) |
15 |
|
27 |
|
− |
−45 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2004 Feb 04 |
2 |
Philips Semiconductors |
|
|
Product specification |
||
|
|
|
|
|
|
Base station LDMOS transistors |
BLF900-110; BLF900S-110 |
||||
|
|
|
|
|
|
ORDERING INFORMATION |
|
|
|
||
|
|
|
|
|
|
TYPE NUMBER |
|
|
|
PACKAGE |
|
|
|
|
|
|
|
|
NAME |
|
DESCRIPTION |
VERSION |
|
|
|
|
|||
|
|
|
|
|
|
BLF900-110 |
|
− |
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads |
SOT502A |
|
|
|
|
|
|
|
BLF900S-110 |
|
− |
Earless flanged LDMOST ceramic package; 2 leads |
SOT502B |
|
|
|
|
|
|
|
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
VDS |
drain-source voltage |
− |
75 |
V |
VGS |
gate-source voltage |
− |
±15 |
V |
Tstg |
storage temperature |
−65 |
+150 |
°C |
Tj |
junction temperature |
− |
200 |
°C |
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
|
|
|
|
|
Rth(j-c) |
thermal resistance from junction to case |
Th = 25 °C, PL = 160 W (AV), note 1 |
0.9 |
K/W |
Note |
|
|
|
|
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
V(BR)DSS |
drain-source breakdown voltage |
VGS = 0; ID = 3 mA |
75 |
− |
− |
V |
VGSth |
gate-source threshold voltage |
VDS = 10 V; ID = 250 mA |
4.5 |
− |
5.5 |
V |
IDSS |
drain-source leakage current |
VGS = 0; VDS = 28 V |
− |
− |
3 |
μA |
IDSX |
on-state drain current |
VGS = VGSth + 9 V; VDS = 10 V |
31 |
− |
− |
A |
IGSS |
gate leakage current |
VGS = ±15 V; VDS = 0 |
− |
− |
0.5 |
μA |
gfs |
forward transconductance |
VDS = 20 V; ID = 7.5 A |
− |
7 |
− |
S |
RDSon |
drain-source on-state resistance |
VGS = VGSth + 9 V; ID = 9 A |
− |
90 |
− |
mΩ |
2004 Feb 04 |
3 |
Philips Semiconductors |
Product specification |
|
|
Base station LDMOS transistors |
BLF900-110; BLF900S-110 |
|
|
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. VDS = 27 V; f = 890 MHz; Th = 25 °C; unless otherwise specified.
SYMBOL |
PARAMETER |
|
|
|
CONDITIONS |
MIN. |
TYP. |
|
MAX. |
UNIT |
|
|
|
|
|
|
|
|
|
|
|
||
Mode of operation: 2-tone CW, 100 kHz spacing, IDQ = 700 mA |
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
G |
power gain |
P |
L |
= 100 W (PEP) |
16 |
|
17 (1) |
|
− |
dB |
|
p |
|
|
|
|
|
|
|
|
|
|
|
ηD |
drain efficiency |
|
|
|
|
35 |
|
38 |
|
− |
% |
IRL |
input return loss |
|
|
|
|
− |
−9 |
|
<−6 |
dB |
|
|
|
|
|
|
|
|
|
|
|
|
|
d3 |
third order intermodulation |
|
|
|
|
− |
−33 |
|
−27 |
dBc |
|
|
distortion |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
ruggedness |
VSWR = 10 : 1 through all |
no degradation in output power |
||||||||
|
|
phases; PL = 125 W (PEP) |
|
|
|
|
|
|
|||
Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13), I DQ = 575 mA |
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
||
Gp |
power gain |
PL = 24 W (AV) |
− |
15 |
|
− |
dB |
||||
ηD |
drain efficiency |
PL = 24 W (AV) |
− |
27 |
|
− |
% |
||||
ACPR 750 |
adjacent channel power ratio |
at BW = 30 kHz |
− |
−45 |
|
− |
dBc |
||||
|
|
|
|
|
|
|
|
|
|
|
|
Note |
|
|
|
|
|
|
|
|
|
|
|
1. Refer to RF Gain grouping table. |
|
|
|
|
|
|
|
|
|
|
|
RF Gain grouping |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GAIN(2) |
|
|
|
|
|
|
CODE(1) |
|
|
|
|
(dB) |
|
|
|
|
|
|
|
|
|
|
MIN. |
|
|
|
MAX. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
B |
|
|
|
16.0 |
|
|
|
16.5 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
C |
|
|
|
16.5 |
|
|
|
17.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
D |
|
|
|
17.0 |
|
|
|
17.5 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
E |
|
|
|
17.5 |
|
|
|
18.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Notes
1. 0.2 dB overlap is allowed for measurement repeatability. 2. For 2-tone at f1 = 890 MHz; f2 = 890.1 MHz.
2004 Feb 04 |
4 |
Loading...