Philips BLF900-110, BLF900S-110 Technical data
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DISCRETE SEMICONDUCTORS
DATA SH EET
M3D379
M3D461
BLF900-110; BLF900S-110
Base station LDMOS transistors
Product specification
Supersedes data of 2003 Sep 22
2004 Feb 04
Philips Semiconductors Product specification
Base station LDMOS transistors BLF900-110; BLF900S-110
FEATURES
• Typical CDMA IS95 performance at standard settings
with a supply voltage of 27 V, frequency of 881.5 MHz
and IDQ of 700 mA; adjacent channel bandwidth is
APPLICATIONS
• RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier operations in the
800 to 1000 MHz frequency range.
30 kHz, adjacent channel at ± 750 kHz:
– Output power = 24 W (AV)
– Gain = 15 dB
– Efficiency = 27%
DESCRIPTION
110 W LDMOS power transistor for base station
applications at frequencies from 800 to 1000 MHz.
– ACPR = −45 dBc at 750 kHz and BW = 30 kHz.
• 110 W CW performance
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (800 to 1000 MHz)
• Internally matched for ease of use.
PINNING - SOT502A PINNING - SOT502B
PIN DESCRIPTION
1 drain
2 gate
3 source; connected to flange
PIN DESCRIPTION
1 drain
2 gate
3 source; connected to flange
handbook, halfpage
Top view
1
2
3
MBK394
Fig.1 Simplified outline SOT502A (BLF900-110).
Top view
Leads are gold-plated.
Fig.2 Simplified outline SOT502B (BLF900S-110).
1
3
2
MBL105
QUICK REFERENCE DATA
Typical RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
η
D
(%)
d
3
(dBc)
ACPR 750
(dBc)
2-tone, class-AB f1= 890.0; f2= 890.1 27 100 (PEP) 17 38 −33 −
CDMA (IS95) 881.5 27 24 (AV) 15 27 −−45
2004 Feb 04 2
Philips Semiconductors Product specification
Base station LDMOS transistors BLF900-110; BLF900S-110
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
BLF900-110 − Flanged LDMOST ceramicpackage; 2 mounting holes; 2 leads SOT502A
BLF900S-110 − Earless flanged LDMOST ceramic package; 2 leads SOT502B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
T
stg
T
j
drain-source voltage − 75 V
gate-source voltage −±15 V
storage temperature −65 +150 °C
junction temperature − 200 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-c)
thermal resistance from junction to case Th=25°C, PL= 160 W (AV),note 1 0.9 K/W
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
drain-source breakdown voltage VGS= 0; ID= 3 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID= 250 mA 4.5 − 5.5 V
drain-source leakage current VGS= 0; VDS=28V −−3 µA
on-state drain current VGS=V
+9V; VDS=10V 31 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−0.5 µA
forward transconductance VDS= 20 V; ID= 7.5 A − 7 − S
drain-source on-state resistance VGS=V
+ 9 V; ID=9A − 90 − mΩ
GSth
2004 Feb 04 3
Philips Semiconductors Product specification
Base station LDMOS transistors BLF900-110; BLF900S-110
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
= 27 V; f = 890 MHz; Th=25°C; unless otherwise specified.
DS
Mode of operation: 2-tone CW, 100 kHz spacing, I
G
p
η
D
power gain PL= 100 W (PEP) 16 17
drain efficiency 35 38 − %
= 700 mA
DQ
(1)
− dB
IRL input return loss −−9<−6dB
d
3
third order intermodulation
−−33 −27 dBc
distortion
ruggedness VSWR = 10 : 1 through all
no degradation in output power
phases; PL= 125 W (PEP)
Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13), IDQ= 575 mA
G
p
η
D
power gain PL=24W(AV) − 15 − dB
drain efficiency PL=24W(AV) − 27 − %
ACPR 750 adjacent channel power ratio at BW = 30 kHz −−45 − dBc
Note
1. Refer to RF Gain grouping table.
RF Gain grouping
(2)
GAIN
CODE
(1)
(dB)
MIN. MAX.
B 16.0 16.5
C 16.5 17.0
D 17.0 17.5
E 17.5 18.0
Notes
1. 0.2 dB overlap is allowed for measurement repeatability.
2. For 2-tone at f
= 890 MHz; f2= 890.1 MHz.
1
2004 Feb 04 4
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