Philips BLF861A Technical data

查询BLF861A供应商查询BLF861A供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D392

BLF861A

UHF power LDMOS transistor

Product specification
Supersedes data of 2000 Aug 04

2001 Feb 09

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Designed to withstand abrupt load mismatch errors

• Source on underside eliminates DC isolators; reducing

common mode inductance

• Designed for broadband operation (UHF band)

• Internal input and output matching for high gain and

optimum broadband operation.

APPLICATIONS

• Communication transmitter applications in the UHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.

PINNING - SOT540A

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source connected to flange

12

Top view

Fig.1 Simplified outline.

5

43

MBK777

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source 860 MHz test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

CW, class-AB 860 32 150 >13.5

G

(dB)

p

η

D

(%)

>50 ≤1

typ. 14.5

PAL BG (TV); class-AB 860 (ch 69) 32 >150

>14 >40 note 1

typ. 170

(peak sync)

Note

1. Sync compression: input sync ≥ 33%; output sync 27%.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
total power dissipation Tmb≤ 25 °C − 318 W
storage temperature −65 +150 °C
junction temperature − 200 °C

∆G

(dB)

p

2001 Feb 09 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base Tmb=25°C; P
thermal resistance from mounting base to heatsink 0.2 K/W

CHARACTERISTICS

Tj=25°C; per section; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

iss

C

oss

C

rss

drain-source breakdown voltage VGS= 0; ID= 1.5 mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 150 mA 4 − 5.5 V
drain-source leakage current VGS= 0; VDS=32V −−2.2 µA
drain cut-off current VGS=V

+9V; VDS=10V 18 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS=10V; ID=4A − 4 − S
drain-source on-state resistance VGS=V

+9V; ID=4A − 160 − mΩ

GSth

input capacitance VGS= 0; VDS=32V; f=1MHz
output capacitance VGS= 0; VDS=32V; f=1MHz
feedback capacitance VGS= 0; VDS=32V; f=1MHz

= 318 W 0.55 K/W

tot

(1)

− 82 − pF

(1)

− 40 − pF

(1)

− 6 − pF

Note

1. Capacitance values without internal matching.

100

handbook, halfpage

C

oss

(pF)

80

60

40

20

0

VGS= 0; f= 1 MHz; Tj=25°C.

10 20 30 40

050

MLD510

VDS (V)

Fig.2 Output capacitance as a function of

drain-source voltage; typical values per
section.

2001 Feb 09 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

APPLICATION INFORMATION

RF performance in a common source 860 MHz testcircuit. Th=25°C; R

= 0.15 K/W; unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

CW; class-AB 860 32 1 150 >13.5

P

(W)

L

G

p

(dB)

η

(%)

D

d

Im

(dBc)

∆G

(dB)

p

>50 −≤1

typ. 14.5

2-tone; class-AB f1= 860

32 1 150 (PEP) >14 >40 ≤−25 −

f1= 860.1

PAL BG (TV); class-AB 860

(ch 69)

32 1 > 150

typ. 170

>14 >40 − note 1

(peak sync)

Note

1. Sync compression: input sync ≥ 33%; output sync 27% measured in an 860 MHz test circuit.

Ruggedness in class-AB operation

The BLF861Ais capable ofwithstanding a loadmismatch correspondingtoVSWR = 10 : 1 throughall phases underthe
following conditions: V

= 32 V; f = 860 MHz at rated load power.

DS

The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load
mismatch errors under the nominal power condition.

12

handbook, halfpage

z

i

(Ω)

MCD871

x

i

10

handbook, halfpage

Z

L

(Ω)

R

L

MCD872

8

4

0

400 900

CW, class-AB operation; VDS= 32 V; IDQ=1A;

= 170 W (total device); Th=25°C.

P

L

500

600 700 800

r

i

f (MHz)

Fig.3 Input impedanceas a function offrequency

(series components); typical push-pull
values.

2001 Feb 09 4

5

0

X

L

−5
400 900

CW, class-AB operation; VDS= 32 V; IDQ=1A;

= 170 W (total device); Th=25°C.

P

L

500 600 700 800

f (MHz)

Fig.4 Load impedanceas a function offrequency

(series components); typical push-pull
values.

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 100

Th=25°C; VDS= 32 V; IDQ=1A.
2-tone: f1= 860 MHz (−6 dB); f2= 860.1 MHz (−6 dB)
measured in an 860 MHz test circuit.

G

p

η

D

200

MLD514

PL (PEP) (W)

Fig.5 Powergain anddrainefficiency asfunctions

of peak envelope load power; typical
values.

300

80

η

D

(%)

60

40

20

0

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

0 100

Th=25°C; VDS= 32 V; IDQ=1A.
2-tone: f1= 860 MHz (−6 dB); f2= 860.1 MHz (−6 dB)

measured in an 860 MHz test circuit.

d

d

200

MLD515

3

5

PL (PEP) (W)

300

Fig.6 Intermodulation distortion as a function of

peak envelopeoutput power;typical values.

20

handbook, halfpage

G

p

(dB)

15

10

5

0

050

Th=25°C; VDS= 32 V; IDQ= 1 A; CW, class-AB; f = 860 MHz;
measured in an 860 MHz test circuit.

G

p

η

D

100 150 200

MLD516

P

(W)

L

Fig.7 Powergain anddrainefficiency asfunctions

of load power; typical values.

250

80

60

40

20

0

η

(%)

D

2001 Feb 09 5