Philips BLF861A Technical data

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DISCRETE SEMICONDUCTORS

DATA SH EET

M3D392

BLF861A

UHF power LDMOS transistor

Product specification
Supersedes data of 2000 Aug 04

2001 Feb 09

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Designed to withstand abrupt load mismatch errors

• Source on underside eliminates DC isolators; reducing

common mode inductance

• Designed for broadband operation (UHF band)

• Internal input and output matching for high gain and

optimum broadband operation.

APPLICATIONS

• Communication transmitter applications in the UHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.

PINNING - SOT540A

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source connected to flange

12

Top view

Fig.1 Simplified outline.

5

43

MBK777

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source 860 MHz test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

CW, class-AB 860 32 150 >13.5

G

(dB)

p

η

D

(%)

>50 ≤1

typ. 14.5

PAL BG (TV); class-AB 860 (ch 69) 32 >150

>14 >40 note 1

typ. 170

(peak sync)

Note

1. Sync compression: input sync ≥ 33%; output sync 27%.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
total power dissipation Tmb≤ 25 °C − 318 W
storage temperature −65 +150 °C
junction temperature − 200 °C

∆G

(dB)

p

2001 Feb 09 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base Tmb=25°C; P
thermal resistance from mounting base to heatsink 0.2 K/W

CHARACTERISTICS

Tj=25°C; per section; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

iss

C

oss

C

rss

drain-source breakdown voltage VGS= 0; ID= 1.5 mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 150 mA 4 − 5.5 V
drain-source leakage current VGS= 0; VDS=32V −−2.2 µA
drain cut-off current VGS=V

+9V; VDS=10V 18 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS=10V; ID=4A − 4 − S
drain-source on-state resistance VGS=V

+9V; ID=4A − 160 − mΩ

GSth

input capacitance VGS= 0; VDS=32V; f=1MHz
output capacitance VGS= 0; VDS=32V; f=1MHz
feedback capacitance VGS= 0; VDS=32V; f=1MHz

= 318 W 0.55 K/W

tot

(1)

− 82 − pF

(1)

− 40 − pF

(1)

− 6 − pF

Note

1. Capacitance values without internal matching.

100

handbook, halfpage

C

oss

(pF)

80

60

40

20

0

VGS= 0; f= 1 MHz; Tj=25°C.

10 20 30 40

050

MLD510

VDS (V)

Fig.2 Output capacitance as a function of

drain-source voltage; typical values per
section.

2001 Feb 09 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

APPLICATION INFORMATION

RF performance in a common source 860 MHz testcircuit. Th=25°C; R

= 0.15 K/W; unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

CW; class-AB 860 32 1 150 >13.5

P

(W)

L

G

p

(dB)

η

(%)

D

d

Im

(dBc)

∆G

(dB)

p

>50 −≤1

typ. 14.5

2-tone; class-AB f1= 860

32 1 150 (PEP) >14 >40 ≤−25 −

f1= 860.1

PAL BG (TV); class-AB 860

(ch 69)

32 1 > 150

typ. 170

>14 >40 − note 1

(peak sync)

Note

1. Sync compression: input sync ≥ 33%; output sync 27% measured in an 860 MHz test circuit.

Ruggedness in class-AB operation

The BLF861Ais capable ofwithstanding a loadmismatch correspondingtoVSWR = 10 : 1 throughall phases underthe
following conditions: V

= 32 V; f = 860 MHz at rated load power.

DS

The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load
mismatch errors under the nominal power condition.

12

handbook, halfpage

z

i

(Ω)

MCD871

x

i

10

handbook, halfpage

Z

L

(Ω)

R

L

MCD872

8

4

0

400 900

CW, class-AB operation; VDS= 32 V; IDQ=1A;

= 170 W (total device); Th=25°C.

P

L

500

600 700 800

r

i

f (MHz)

Fig.3 Input impedanceas a function offrequency

(series components); typical push-pull
values.

2001 Feb 09 4

5

0

X

L

−5
400 900

CW, class-AB operation; VDS= 32 V; IDQ=1A;

= 170 W (total device); Th=25°C.

P

L

500 600 700 800

f (MHz)

Fig.4 Load impedanceas a function offrequency

(series components); typical push-pull
values.

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 100

Th=25°C; VDS= 32 V; IDQ=1A.
2-tone: f1= 860 MHz (−6 dB); f2= 860.1 MHz (−6 dB)
measured in an 860 MHz test circuit.

G

p

η

D

200

MLD514

PL (PEP) (W)

Fig.5 Powergain anddrainefficiency asfunctions

of peak envelope load power; typical
values.

300

80

η

D

(%)

60

40

20

0

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

0 100

Th=25°C; VDS= 32 V; IDQ=1A.
2-tone: f1= 860 MHz (−6 dB); f2= 860.1 MHz (−6 dB)

measured in an 860 MHz test circuit.

d

d

200

MLD515

3

5

PL (PEP) (W)

300

Fig.6 Intermodulation distortion as a function of

peak envelopeoutput power;typical values.

20

handbook, halfpage

G

p

(dB)

15

10

5

0

050

Th=25°C; VDS= 32 V; IDQ= 1 A; CW, class-AB; f = 860 MHz;
measured in an 860 MHz test circuit.

G

p

η

D

100 150 200

MLD516

P

(W)

L

Fig.7 Powergain anddrainefficiency asfunctions

of load power; typical values.

250

80

60

40

20

0

η

(%)

D

2001 Feb 09 5

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

50 Ω

output

C26

C24

S

+V

L18

C25

C15L17

C21

MCD876

C23

handbook, full pagewidth

C20

B2

L15

C14

L13

L11

L9

L7

L5

L

C10

C9

R1

C5

L3

C4

19

C12 C13

C11

C8

C7

C6

L4

C22

L16

L14

L12

L10

L8

L6

Fig.8 Class-AB common source broadband test circuit.

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2001 Feb 09 6

R2

+V

bias

C19

C18

R3

R4

C3

C2

R5

C16

B1

C1

L2

R6

input

C17

50 Ω

L1

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

List of components class-AB broadband test circuit (see Figs 8 and 9)

COMPONENT DESCRIPTION VALUE DIMENSIONS

C1 multilayer ceramic chip capacitor; note 1 20 pF
C2 multilayer ceramic chip capacitor; note 1 4.3 pF
C3, C6, C9 tekelec trimmer 0.6 to 4.5 pF
C4 multilayer ceramic chip capacitor; note 1 9.1 pF
C5 multilayer ceramic chip capacitor; note 1 10 pF
C7 multilayer ceramic chip capacitor; note 1 5.1 pF
C8 multilayer ceramic chip capacitor; note 1 13 pF
C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF
C12, C13 multilayer ceramic chip capacitor; note 2 6.8 pF
C14 multilayer ceramic chip capacitor; note 3 1 pF
C15 multilayer ceramic chip capacitor; note 3 20 pF
C16, C17 multilayer ceramic chip capacitor 1 nF
C18 multilayer ceramic chip capacitor 100 nF
C19, C26 multilayer ceramic chip capacitor 100 µF
C20, C21,

C22, C23
C24 electrolytic capacitor 1000 µF
C25 multilayer ceramic chip capacitor 1 µF 2222 595 16754
L1, L2 stripline; note 4 30.6 × 2.4 mm
L3, L4 stripline; note 4 28 × 2.4 mm
L5, L6 stripline; note 4 10 × 5mm
L7, L8 stripline; note 4 20 × 10 mm
L9, L10 stripline; note4 5.5 × 15 mm
L11, L12 stripline; note 4 10 × 10 mm
L13, L14 stripline; note 4 15 × 5mm
L15, L16 stripline; note 4 48.5 × 2.4 mm
L17 stripline; note 4 10 × 2.4 mm
L18 ferrite
L19 wire inductor (hairpin) length = 17 mm
B1 semi rigid coax balun UT70-25 Z= 25 Ω±1.5 Ω 70 mm
B2 semi rigid coax balun UT70-25 Z= 25 Ω±1.5 Ω 48.5 mm

multilayer ceramic chip capacitor; note 2 100 pF

CATALOGUE

No.

2001 Feb 09 7

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

COMPONENT DESCRIPTION VALUE DIMENSIONS

R1 resistor 33 Ω
R2 resistor 1 kΩ
R3 resistor 100 kΩ
R4 resistor 100 Ω
R5, R6 SMD resistor 3.9 Ω

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 180R or capacitor of same quality.

3. American Technical Ceramics type 100B or capacitor of same quality.

4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr= 2.2); thickness 0.79 mm.

CATALOGUE

No.

2001 Feb 09 8

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

handbook, full pagewidth

C16

C17

C1

R5

R6

R4

R2

B1

+V

10

C2
C3

bias

C4

C18 C19

C5
C6

C7

R3

R1

9595

80

+V

S

C26

C14

L18

8

C21

C25

C20

C23

C22

C24

B2

C15

15

C8

C9

2.5

2.5

BLF861

C10

L19

C11

C12 C13

MCD877

Dimensions in mm.
The components are situated onone side of the Rogers5880printed-circuit board, the other sideis unetched and serves asa ground plane.

Earth connections from the component side to the ground plane are made by through-metallization.

Fig.9 Printed-circuit board and component layout for class-AB broadband test circuit.

2001 Feb 09 9

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

16

handbook, halfpage

G

p

(dB)

12

8

4

400 900

Th=25°C; VCE= 32 V; IDQ= 1 A; PAL BG signal (TV);
sync compression: input 33%, output 27%;
measured in broadband test circuit.

500

G

p

η

D

600 700 800

MLD511

f (MHz)

Fig.10 Power gainanddrain efficiencyasfunctions

of frequency; typical values.

80

η

(%)

60

40

20

250

handbook, halfpage

P

o sync

D

(W)

200

150

100

50

0

400 900

Th=25°C; VCE= 32 V; IDQ= 1 A; PAL BG signal (TV);
sync compression: input 33%, output 27%;
measured in broadband test circuit.

500 600 700 800

MLD512

f (MHz)

Fig.11 Peak envelope sync power as a functionof

frequency; typical values.

16

handbook, halfpage

G

p

(dB)

12

8

4

400 900

Th=25°C; VDS= 32 V; IDQ= 1 A; CW, class-AB operation;

= 150 W; measured in broadband test circuit.

P

L

500

600 700 800

MLD513

G

p

η

D

f (MHz)

Fig.12 Power gainanddrain efficiencyasfunctions

of frequency; typical values.

80

η

(%)

60

40

20

D

2001 Feb 09 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

PACKAGE OUTLINE

Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A

D

A

F

D

1

U

1

q

H

1

w

2

C

M M

C

12

H

U

2

5

A

e

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

8.51

8.26

0.335

0.325

c

0.15

0.10

0.006

0.004

Db

22.05

21.64

0.868

0.852

D

e U

1

10.21

0.402

10.26

10.06

0.404

0.396

22.05

21.64

0.868

0.852

UNIT

mm

inches

A

5.77

5.00

0.227

0.197

43

b

0 5 10 mm

EE

1

10.31

10.01

0.406

0.394

w

M

3

scale

F

1.78

1.52

0.070

0.060

H

15.75

14.73

0.620

0.580

H

1

18.72

18.47

0.737

0.727

B

p

w

1

p

3.38

3.12

0.133

0.123

c

E

1

M MM

AB

Q

qw

27.94

U

1

34.16

33.91

1.345

1.335

Q

2.72

2.46

0.107

0.097

w

2

9.91

9.65

0.390

0.380

E

w

2

1

0.250.25 0.51

0.0100.010 0.0201.100

3

OUTLINE

VERSION

SOT540A

IEC JEDEC EIAJ

REFERENCES

2001 Feb 09 11

EUROPEAN

PROJECTION

ISSUE DATE

99-08-27
99-12-28

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This datasheet contains preliminary data, andsupplementarydata will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

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reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2001 Feb 09 12

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

NOTES

2001 Feb 09 13

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

NOTES

2001 Feb 09 14

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

NOTES

2001 Feb 09 15

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71

Printed in The Netherlands 613524/02/pp16 Date of release: 2001 Feb 09 Document order number: 9397 750 07753