Philips BLF861 Datasheet

DISCRETE SEMICONDUCTORS

M3D392

DATA SHEET

BLF861

UHF power LDMOS transistor

Preliminary specification 1999 Aug 26

Philips Semiconductors Preliminary specification

UHF power LDMOS transistor BLF861

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (UHF band).

APPLICATIONS

• Communication transmitter applications in the UHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in an SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common source test circuit.

h

PINNING - SOT540A

PIN DESCRIPTION

1drain 1
2drain 2
3gate 1
4gate 2
5 source, connected to flange

12

Top view

Fig.1 Simplified outline.

5

43

MBK777

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

∆G
(dB)

CW, class-AB 860 32 150 >14 >50 ≤1

PAL BG (TV), class-AB

860

(ch 69)

32

typ.170

(peak sync)

>14 >40 note 1

Notes

1. Sync compression: input sync: ≥33%; output sync: 27 %

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
total power dissipation Tmb≤ 25 °C − 318 W
storage temperature −65 +150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

p

1999 Aug 26 2

Philips Semiconductors Preliminary specification

Fig.2 Output capacitance as a function of drain-

source voltage; typical values per section.

VGS=0; f=1MHz; Tj=25°C.

UHF power LDMOS transistor BLF861

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

CHARACTERISTICS

T

=25°C; per section; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

is

C

os

C

rs

thermal resistance from junction to mounting base Tmb=25°C; P

= 318 W 0.55 K/W

tot

thermal resistance from mounting base to heatsink 0.2 K/W

drain-source breakdown voltage VGS=0; ID=1.5mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 150 mA 4 − 5V
drain-source leakage current VGS=0; VDS=32V −−10 µA
drain cut-off current VGS=V

+9V; VDS=10V 18 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−100 nA
forward transconductance VDS=10V; ID=4A − 4 − S
drain-source on-state resistance VGS=V

+9V; ID=4A − 160 − mΩ

GSth

input capacitance VGS=0; VDS=32V; f=1MHz − 84 − pF
output capacitance VGS=0; VDS=32V; f=1MHz − 42 − pF
feedback capacitance VGS=0; VDS=32V; f=1MHz − 6 − pF

200

C

OS

(pF)

160

120

80

40

0

0 1020304050

1999 Aug 26 3

V

(V)

DS

Philips Semiconductors Preliminary specification

Fig.3 Input impedance as a function of frequency

(series components); typical values per
section.

CW, class-AB operation; VDS=32V; IDQ=1.15A;
P

L

= 170 W (total device) ; Th=25 °C.

UHF power LDMOS transistor BLF861

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

=25°C; R

h

= 0.15 K/W, unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

(W)

L

G

p

(dB)

η

(%)

D

d

IM

(dBc)

∆G

(dB)

p

CW, class-AB 860 32 1.15 150 >14 >50 −≤1

f

= 860

2-tone, class-AB

PAL BG (TV), class-AB

1

f

= 860.1

1

860

(ch 69)

32 1.15 150 (PEP) >14 >40 ≤−30 −

32 1.15

typ.170

(peak sync)

>14 >40 − note 1

Notes

1. Sync compression: input sync: ≥33%; output sync: 27 %

measured in narrowband testcircuit.

Ruggedness in class-AB operation

The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V

= 32 V; f = 860 MHz at rated load power.

DS

12

Z

i

(Ω)

x

i

8

r

4

0

400 500 600 700 800 900

1999 Aug 26 4

i

f (MHz)

10

Z

L

(Ω)

8

6

4

2

0

-2

-4

-6
400 500 600 700 800 900

CW, class-AB operation; VDS=32V; IDQ=1.15A;

= 170 W (total device) ; Th=25 °C.

P

L

R

L

X

L

f (MHz)

Fig.4 Load impedance as a function of frequency

(series components); typical values per
section.