Philips BLF647 Technical data

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M3D392

BLF647

UHF power LDMOS transistor

Product specification
Supersedes data of 2001 Aug 02

2001 Nov 27

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (HF to 800 MHz)

• Internal input damping for excellent stability over the

whole frequency range.

APPLICATIONS

• Communication transmitter applications in the
HF to 800 MHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.

PINNING - SOT540A

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source, connected to flange

12

Top view

Fig.1 Simplified outline.

5

43

MBK777

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

d

im

(dBc)

CW, class-AB 600 28 120 >14.5 >55 −
2-tone,

class-AB

f

= 600; f2= 600.1 28 120 (PEP) >14.5 >40 ≤−26

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
total power dissipation Tmb≤ 25 °C − 290 W
storage temperature −65 +150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2001 Nov 27 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base Tmb=25°C; P
thermal resistance from mounting base to heatsink 0.2 K/W

CHARACTERISTICS

Tj=25°C per section unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

iss

drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
gate-source threshold voltage VDS= 20 V; ID= 140 mA 4 − 5.5 V
drain-source leakage current VGS= 0; VDS=28V −−1.2 µA
drain cut-off current VGS=V

+9V; VDS=10V 18 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS= 20 V; ID=4A − 4 − S
drain-source on-state resistance VGS=V

+9V; ID=4A − 160 − mΩ

GSth

input capacitance VGS=0;VDS= 28 V; f = 1 MHz;

note 1

C

oss

C

rss

output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 43 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 6 − pF

= 290 W 0.6 K/W

tot

− 80 − pF

Note

1. Capacitance values of the die only.

100

handbook, halfpage

C

oss

(pF)

80

60

40

20

0

03010 40 50

VGS= 0; f= 1 MHz; Tj=25°C.

20

Fig.2 Output capacitance as a function of

drain-source voltage; typical values per
section.

MGW546

VDS (V)

2001 Nov 27 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. Th=25°C; R

= 0.2 K/W, unless otherwise specified.

th mb-h

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

CW, class-AB 600 28 120 >14.5 >55 −
2-tone, class-AB f

= 600; f2= 600.1 28 120 (PEP) >14.5 >40 ≤−26

1

CW, class-AB 800 32 150 typ. 12.5 typ. 60 −
2-tone, class-AB f

= 800; f2= 800.1 32 150 (PEP) typ. 13 typ. 45 typ. −30

1

Ruggedness in class-AB operation

The BLF647 is capable of withstanding a loadmismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V

= 28 V; f = 100 MHz at rated load power.

DS

The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.

Impedances (per section)
At f = 600 MHz, P

= 120 W, VDS= 28 V and IDQ= 1 A: Zin= 1.0 + j2.0 Ω and ZL= 2.7 + j0.7 Ω.

L

At f = 800 MHz, PL= 150 W, VDS= 32 V and IDQ= 1 A: Zin= 1.0 + j3.8 Ω and ZL= 1.8 + j0.7 Ω.

2001 Nov 27 4

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

Application at 600 MHz

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 10050 150 200

Th=25°C; VDS= 28 V; IDQ=1A.
2-tone: f1= 600 MHz (−6 dB); f2= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.

G

p

η

D

PL (PEP) (W)

MGW540

Fig.3 Powergain anddrainefficiency asfunctions

of peak envelope load power; typical
values.

80

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20
d

3

−40

−60

−80

0 10050 150 200

Th=25°C; VDS= 28 V; IDQ=1A.
2-tone: f1= 600 MHz (−6 dB); f2= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.

d

5

PL (PEP) (W)

MGW541

Fig.4 Intermodulation distortion as a function of

peak envelopeoutput power;typical values.

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 10050 150 200

Th=25°C; VDS= 28 V; IDQ= 1 A; CW, class-AB; f = 600 MHz;
measured in 600 MHz test circuit.

G

p

η

D

MGW542

PL (W)

80

60

40

20

0

η

(%)

D

Fig.5 Powergain anddrainefficiency asfunctions

of load power; typical values.

2001 Nov 27 5