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DATA SH EET
M3D392
BLF647
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Aug 02
2001 Nov 27
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 800 MHz)
• Internal input damping for excellent stability over the
whole frequency range.
APPLICATIONS
• Communication transmitter applications in the
HF to 800 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
PINNING - SOT540A
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source, connected to flange
12
Top view
Fig.1 Simplified outline.
5
43
MBK777
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
η
D
(%)
d
im
(dBc)
CW, class-AB 600 28 120 >14.5 >55 −
2-tone,
class-AB
f
= 600; f2= 600.1 28 120 (PEP) >14.5 >40 ≤−26
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
total power dissipation Tmb≤ 25 °C − 290 W
storage temperature −65 +150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Nov 27 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base Tmb=25°C; P
thermal resistance from mounting base to heatsink 0.2 K/W
CHARACTERISTICS
Tj=25°C per section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
iss
drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
gate-source threshold voltage VDS= 20 V; ID= 140 mA 4 − 5.5 V
drain-source leakage current VGS= 0; VDS=28V −−1.2 µA
drain cut-off current VGS=V
+9V; VDS=10V 18 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS= 20 V; ID=4A − 4 − S
drain-source on-state resistance VGS=V
+9V; ID=4A − 160 − mΩ
GSth
input capacitance VGS=0;VDS= 28 V; f = 1 MHz;
note 1
C
oss
C
rss
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 43 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 6 − pF
= 290 W 0.6 K/W
tot
− 80 − pF
Note
1. Capacitance values of the die only.
100
handbook, halfpage
C
oss
(pF)
80
60
40
20
0
03010 40 50
VGS= 0; f= 1 MHz; Tj=25°C.
20
Fig.2 Output capacitance as a function of
drain-source voltage; typical values per
section.
MGW546
VDS (V)
2001 Nov 27 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; R
= 0.2 K/W, unless otherwise specified.
th mb-h
MODE OF OPERATION
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
CW, class-AB 600 28 120 >14.5 >55 −
2-tone, class-AB f
= 600; f2= 600.1 28 120 (PEP) >14.5 >40 ≤−26
1
CW, class-AB 800 32 150 typ. 12.5 typ. 60 −
2-tone, class-AB f
= 800; f2= 800.1 32 150 (PEP) typ. 13 typ. 45 typ. −30
1
Ruggedness in class-AB operation
The BLF647 is capable of withstanding a loadmismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
= 28 V; f = 100 MHz at rated load power.
DS
The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.
Impedances (per section)
At f = 600 MHz, P
= 120 W, VDS= 28 V and IDQ= 1 A: Zin= 1.0 + j2.0 Ω and ZL= 2.7 + j0.7 Ω.
L
At f = 800 MHz, PL= 150 W, VDS= 32 V and IDQ= 1 A: Zin= 1.0 + j3.8 Ω and ZL= 1.8 + j0.7 Ω.
2001 Nov 27 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
Application at 600 MHz
20
handbook, halfpage
G
p
(dB)
15
10
5
0
0 10050 150 200
Th=25°C; VDS= 28 V; IDQ=1A.
2-tone: f1= 600 MHz (−6 dB); f2= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.
G
p
η
D
PL (PEP) (W)
MGW540
Fig.3 Powergain anddrainefficiency asfunctions
of peak envelope load power; typical
values.
80
60
40
20
0
η
(%)
handbook, halfpage
D
0
d
im
(dBc)
−20
d
3
−40
−60
−80
0 10050 150 200
Th=25°C; VDS= 28 V; IDQ=1A.
2-tone: f1= 600 MHz (−6 dB); f2= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.
d
5
PL (PEP) (W)
MGW541
Fig.4 Intermodulation distortion as a function of
peak envelopeoutput power;typical values.
20
handbook, halfpage
G
p
(dB)
15
10
5
0
0 10050 150 200
Th=25°C; VDS= 28 V; IDQ= 1 A; CW, class-AB; f = 600 MHz;
measured in 600 MHz test circuit.
G
p
η
D
MGW542
PL (W)
80
60
40
20
0
η
(%)
D
Fig.5 Powergain anddrainefficiency asfunctions
of load power; typical values.
2001 Nov 27 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
50 Ω
output
C17
MGW539
handbook, full pagewidth
C15
L9
L11
C19
C13
C11
B2
L13
C14
C12
C10
C6
C16
L12
L10
L8
L6
TR1
L16
C20
D
V
+
3
C18
L14 R4
8
L7
L5
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2001 Nov 27 6
C7
R2
L15
L3
C5
C3
R3
L4
C8
C9
Fig.6 Class-AB common source 600 MHz test circuit.
R1
input
B1
L2
bias
V
+
C2
Dimensions in mm.
L1
C1
50 Ω
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
List of components class-AB 600 MHz test circuit (see Figs 6 and 7)
COMPONENT DESCRIPTION VALUE DIMENSIONS
C1, C2 multilayer ceramic chip capacitor; note 1 30 pF
C3 multilayer ceramic chip capacitor; note 1 8.2 pF
C5 multilayer ceramic chip capacitor; note 1 16 pF
C6 Tekelec trimmer 0.6 to 7.5 pF
C7, C8 multilayer ceramic chip capacitor; note 1 100 pF
C9 electrolytic capacitor 10 µF
C10 multilayer ceramic chip capacitor; note 2 2 pF
C11, C12 multilayer ceramic chip capacitor; note 2 10 pF
C13 multilayer ceramic chip capacitor; note 2 8.2 pF
C14 multilayer ceramic chip capacitor; note 2 1.5 pF
C15, C16, C17 multilayer ceramic chip capacitor; note 2 100 pF
C18 SMD capacitor 1 µF 2222 595 16754
C19 electrolytic capacitor 470 µF
C20 electrolytic capacitor 100 µF
L1, L2 semi rigid coax UT70-25 Z = 25 Ω±1.5 Ω 30.6 mm
L3, L4 stripline; note 3 15 × 10 mm
L5, L6 stripline; note 3 5.5 × 15 mm
L7, L8 stripline; note 3 10 × 10 mm
L9, L10 stripline; note 3 15 × 5mm
L11, L12 stripline; note 3 48.5 × 2.4 mm
L13 stripline; note 3 10 × 2.4 mm
L14 ferrite
L15, L16 Coilcraft SMD coil 1008CS-102XKBC 1 µH
B1 semi rigid coax (lambda/2) Z = 50 Ω±1.5 Ω lambda/2
B2 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 Ω 48.5 mm
R1 resistor 1 kΩ
R2, R3 resistor 100 Ω
R4 resistor 3,3 Ω
CATALOGUE
No.
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr= 2.2); thickness 0.79 mm.
2001 Nov 27 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
handbook, full pagewidth
B1
+V
bias
C1
C2
D
C18
C15
R4
C16
C19
95
80
C20
C17
95
R1
C9
L1
L2
C7
C8
R3
C3
R2
C6
L15
BLF647
C5
3
L16
C10
C11
C12
+V
L14
B2
C13
C14
8
Dimensions in mm.
The components are situated onone side of the Rogers5880printed-circuit board, the other sideis unetched and serves asa ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit.
2001 Nov 27 8
MGW547
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
Application at 800 MHz
20
handbook, halfpage
G
p
(dB)
15
10
5
0
0 100 200 300
Th=25°C; VDS= 32 V; IDQ=1A.
2-tone: f1= 800 MHz (−6 dB); f2= 800.1 MHz (−6 dB)
measured in 800 MHz test circuit.
G
p
η
D
MGW543
PL (PEP) (W)
Fig.8 Powergain anddrainefficiency asfunctions
of peak envelope load power; typical
values.
80
60
40
20
0
η
(%)
handbook, halfpage
D
0
d
im
(dBc)
−20
−40
−60
−80
0 100 200 300
Th=25°C; VDS= 32 V; IDQ=1A.
2-tone: f1= 800 MHz (−6 dB); f2= 800.1 MHz (−6 dB)
measured in 800 MHz test circuit.
MGW544
d
3
d
5
PL (PEP) (W)
Fig.9 Intermodulation distortion as a function of
peak envelopeoutput power;typical values.
20
handbook, halfpage
G
p
(dB)
15
10
5
0
Th=25°C; VDS= 32 V; IDQ= 1 A; CW, class-AB; f = 800 MHz;
measured in 800 MHz test circuit.
G
p
η
D
0 10050 150 200
MGW545
PL (W)
80
60
40
20
0
η
(%)
D
Fig.10 Power gainanddrain efficiencyasfunctions
of load power; typical values.
2001 Nov 27 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
50 Ω
output
C17
MGW538
k, full pagewidth
C15
L9
L11
C19
C14
C12
C10
B2
L13
C13
C11
C6
C16
L12
L10
L8
L6
TR1
L16
C20
D
V
+
3
3
C18
L14 R4
8
L7
L5
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2001 Nov 27 10
C7
R2
L15
L3
C5
R3
L4
C8
C9
Fig.11 Class-AB common source 800 MHz test circuit.
R1
input
B1
L2
bias
V
+
C2
Dimensions in mm.
L1
C1
50 Ω
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
List of components class-AB 800 MHz test circuit (see Figs 11 and 12)
COMPONENT DESCRIPTION VALUE DIMENSIONS
C1, C2 multilayer ceramic chip capacitor; note 1 30 pF
C5 multilayer ceramic chip capacitor; note 1 10 pF
C6 tekelec trimmer 0.6 to 7.5 pF
C7, C8 multilayer ceramic chip capacitor; note 1 100 pF
C9 electrolytic capacitor 10 µF
C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF
C12, C13 multilayer ceramic chip capacitor; note 2 10 pF
C14 multilayer ceramic chip capacitor; note 2 4.7 pF
C15, C16 multilayer ceramic chip capacitor; note 2 100 pF
C17 multilayer ceramic chip capacitor; note 2 20 pF
C18 SMD capacitor 1 µF 2222 595 16754
C19 electrolytic capacitor 470 µF
C20 electrolytic capacitor 100 µF
L1, L2 semi rigid coax UT70-25 Z = 25 Ω±1.5 Ω 30.6 mm
L3, L4 stripline; note 3 15 × 10 mm
L5, L6 stripline; note 3 5.5 × 15 mm
L7, L8 stripline; note 3 10 × 10 mm
L9, L10 stripline; note 3 15 × 5mm
L11, L12 stripline; note 3 48.5 × 2.4 mm
L13 stripline; note 3 10 × 2.4 mm
L14 ferrite
L15, L16 Coilcraft SMD coil 1008CS-102XKBC 1 µH
B1 semi rigid coax (lambda/2) Z = 50 Ω±1.5 Ω lambda/2
B2 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 Ω 48.5 mm
R1 resistor 1 kΩ
R2, R3 resistor 100 Ω
R4 resistor 3,3 Ω
CATALOGUE
No.
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (ε
2001 Nov 27 11
= 2.2); thickness 0.79 mm.
r
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
handbook, full pagewidth
B1
+V
bias
C1
C2
95
R1
C9
L1
L2
C8
C7
R3
R2
C6
L15
BLF647
C5
3
L16
C10
C11
3
C13
C12
+V
L14
B2
C14
8
95
80
R4
C16
C19
C20
C17
D
C18
C15
Dimensions in mm.
The components are situated onone side of the Rogers5880printed-circuit board, the other sideis unetched and serves asa ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit.
2001 Nov 27 12
MGW548
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
PACKAGE OUTLINE
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A
D
A
F
D
1
U
1
q
H
1
w
2
C
M M
C
12
H
U
2
5
A
e
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
8.51
8.26
0.335
0.325
c
0.15
0.10
0.006
0.004
Db
22.05
21.64
0.868
0.852
D
22.05
21.64
0.868
0.852
e U
1
10.26
10.21
10.06
0.404
0.402
0.396
UNIT
mm
inches
A
5.77
5.00
0.227
0.197
43
b
0 5 10 mm
EE
1
10.31
10.01
0.406
0.394
w
M
3
scale
F
1.78
1.52
0.070
0.060
H
15.75
14.73
0.620
0.580
H
1
18.72
18.47
0.737
0.727
B
p
w
1
p
3.38
3.12
0.133
0.123
M MM
AB
qw
Q
2.72
27.94
2.46
0.107
0.097
U
1
34.16
33.91
1.345
1.335
E
1
9.91
9.65
0.390
0.380
c
E
Q
w
2
1
2
0.250.25 0.51
0.0100.010 0.0201.100
w
3
OUTLINE
VERSION
SOT540A
IEC JEDEC EIAJ
REFERENCES
2001 Nov 27 13
EUROPEAN
PROJECTION
ISSUE DATE
99-08-27
99-12-28
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 27 14
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
NOTES
2001 Nov 27 15
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613524/03/pp16 Date of release: 2001 Nov 27 Document order number: 9397 75008838
SCA73
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