Philips BLF548 Technical data

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M3D091

BLF548

UHF push-pull power MOS
transistor

Product specification
Supersedes data of Oct 1992

2003 Sep 26

Philips Semiconductors Product specification

h

UHF push-pull power MOS transistor BLF548

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
package, with twoceramic caps. The
mounting flange provides the
common source connection for the
transistors.

PIN CONFIGURATION

12

MBB157

d

2

s

d

1

alfpage

g

2

g

1

55

Top view

34

MSB008

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurther information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

PINNING - SOT262A2

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

WARNING

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a push-pull common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

CW, class-B 500 28 150 >10 >50

2003 Sep 26 2

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section unless otherwise specified

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 15 A
total power dissipation Tmb≤ 25 °C; total device;both sections

− 330 W

equally loaded
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to
mounting base

thermal resistance from mounting
base to heatsink

Tmb=25°C; P

= 330 W; total device;

tot

both sections equally loaded

total device; both sections equally

loaded

0.5 K/W

0.15 K/W

2

10

handbook, halfpage

I

D

(A)

(1)

10

1

110

(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.

Fig.2 DC SOAR.

(2)

VDS (V)

.

DSon

MRA997

Th (

MRA532

o

C)

400

handbook, halfpage

P

tot

(W)

350

300

250

200

150

100

50

2

10

0

0 20 40 60 80 100 120

(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.

(2)

(1)

Fig.3 Power derating curves.

2003 Sep 26 3

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

V

(BR)DSS

I

DSS

I

GSS

V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID=40mA 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−0.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 160 mA; VDS=10V 2 − 4V
forward transconductance ID= 4.8 A; VDS= 10 V 2.4 3.5 − S
drain-source on-state resistance ID= 4.8 A; VGS=10V − 0.25 0.3 Ω
on-state drain current VGS= 15 V; VDS= 10 V 16 20 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 105 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 90 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 25 − pF

VGS group indicator

LIMITS

GROUP

(V)

GROUP

MIN. MAX. MIN. MAX.

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

2003 Sep 26 4

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

handbook, halfpage

3

TC

(mV/K)

2

1

0

−1

−2

−3

−4

10

VDS=10V.

−2

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values per section.

MRA524

25

handbook, halfpage

I

D

(A)

20

15

10

5

0

0 4 8 12 16

VDS= 10 V; Tj=25°C.

MRA529

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

0.5

handbook, halfpage

R

DSon

(Ω)

0.4

0.3

0.2

0.1

0

0 40 80 120

ID = 4.8 A; VGS = 10 V.

Tj (

o

C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values per section.

MRA522

400

handbook, halfpage

C

(pF)

300

200

100

0

0 102030

C

os

C

is

MRA525

VDS (V)

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per
section.

2003 Sep 26 5