Philips BLF548 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF548

UHF push-pull power MOS
transistor

Product specification

October 1992

Philips Semiconductors Product specification

h

UHF push-pull power MOS transistor BLF548

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.

PIN CONFIGURATION

12

MBB157

d

2

s

d

1

alfpage

g

2

g

1

55

Top view

34

MSB008

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

PINNING - SOT262A2

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

WARNING

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a push-pull common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

CW, class-B 500 28 150 > 10 > 50

October 1992 2

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 15 A
total power dissipation up to Tmb = 25 °C; total device; both

− 330 W

sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS

R

th j-mb

R

th mb-h

thermal resistance from junction to
mounting base

thermal resistance from mounting

Tmb = 25 °C; P

= 330 W;

tot

total device; both sections equally loaded
total device; both sections equally loaded 0.15 K/W

base to heatsink

2

10

handbook, halfpage

I

D

(A)

10

(1)

MRA997

(2)

400

handbook, halfpage

P

tot

(W)

350

300

250

200

150

100

50

THERMAL

RESISTANCE

0.5 K/W

MRA532

(2)

(1)

1

110

(1) Current in this area may be limited by R
(2) Tmb = 25 °C.
Total device; both sections equally loaded.

VDS (V)

DS(on)

.

2

10

Fig.2 DC SOAR.

October 1992 3

0

0 20 40 60 80 100 120

(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.

Fig.3 Power/temperature derating curves.

Th (

o

C)

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

CHARACTERISTICS (per section)

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS = 0; ID = 40 mA 65 −− V
drain-source leakage current VGS = 0; VDS = 28 V −−0.5 mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 160 mA; VDS = 10 V 2 − 4V
forward transconductance ID = 4.8 A; VDS = 10 V 2.4 3.5 − S
drain-source on-state resistance ID = 4.8 A; VGS = 10 V − 0.25 0.3 Ω
on-state drain current VGS = 15 V; VDS = 10 V 16 20 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 105 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 90 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 25 − pF

handbook, halfpage

3

TC

(mV/K)

2

1

0

−1

−2

−3

−4

10

VDS= 10 V.

−2

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values per section.

MRA524

25

handbook, halfpage

I

D

(A)

20

15

10

5

0

0 4 8 12 16

VDS = 10 V; Tj = 25 °C.

MRA529

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage, typical values per section.

October 1992 4