Philips BLF547 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF547
UHF push-pull power MOS
transistor
Product specification
October 1992
Philips Semiconductors Product specification
h
UHF push-pull power MOS transistor BLF547
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability
• Designed for broadband operation.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PIN CONFIGURATION
12
MBB157
d
2
s
d
1
alfpage
g
2
g
1
55
Top view
34
MSB008
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT262A2
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
WARNING
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a push-pull common-source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
P
(dB)
η
(%)
D
CW, class-B 500 28 100 > 10 > 50
October 1992 2
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
i
THERMAL RESISTANCE
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 9A
total power dissipation up to Tmb=25°C; total device;
− 225 W
both sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS
R
th j-mb
thermal resistance from junction to
mounting base
Tmb=25°C; P
total device; both sections equally
loaded
R
th mb-h
2
10
handbook, halfpage
I
D
(A)
10
thermal resistance from mounting
base to heatsink
(1)
(2)
MRA996
total device; both sections equally
loaded
250
handbook, halfpage
P
tot
(W)
200
150
100
50
= 225 W
tot
THERMAL
RESISTANCE
max. 0.78 K/W
max. 0.15 K/W
MRB027
(2)
(1)
1
110
(1) Current in this area may be limited by R
(2) Tmb=25°C;
Total device; both sections equally loaded.
VDS (V)
.
DS(on)
2
10
Fig.2 DC SOAR.
October 1992 3
0
020
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
40 60 80 100 120
Fig.3 Power/temperature derating curves.
Th (oC)
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
CHARACTERISTICS (per section)
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 25 mA 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−2.5 mA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 100 mA; VDS= 10 V 1 − 4V
forward transconductance ID= 3 A; VDS= 10 V 1.5 2.1 − S
drain-source on-state resistance ID= 3 A; VGS= 10 V − 0.4 0.5 Ω
on-state drain current VGS= 15 V; VDS= 10 V 10 13 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 77 85 pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 62 70 pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 18 21 pF
handbook, halfpage
4
TC
(mV/K)
2
0
−2
−4
−2
10
VDS= 10 V.
−1
10
110
I
(A)
D
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
MRB025
15
handbook, halfpage
I
D
(A)
10
5
0
0 5 10 15 20
VDS= 10 V; Tj= 25 °C.
MRB024
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
October 1992 4
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