Philips BLF545 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF545

UHF push-pull power MOS
transistor

Product specification

October 1992

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF545

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor designed for
communications transmitter
applications in the UHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT268 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.

PIN CONFIGURATION

handbook, halfpage

1

2

Top view

4

g

5

3

g

d

s

d

MAM395

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

PINNING - SOT268

PIN DESCRIPTION

1 drain 1
2 gate 1
3 gate 2
4 drain 2
5 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

WARNING

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a push-pull common source circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

P

(dB)

(%)

CW, class-B 500 28 40 > 11 > 50

η

D

October 1992 2

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF545

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 3.5 A
total power dissipation up to Tmb=25°C; total device;

− 92 W

both sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS

R

th j-mb

R

th mb-h

2

10

handbook, halfpage

I

D

(A)

10

1

110

thermal resistance from junction to
mounting base

thermal resistance from mounting
base to heatsink

(1)

(2)

VDS (V)

MRA995

total device; both sections equally
loaded

total device; both sections equally
loaded

120

handbook, halfpage

P

tot

(W)

80

40

2

10

0

0

40 80

THERMAL

RESISTANCE

1.9 K/W

0.25 K/W

MBK463

(1)

(2)

Th ( °C)

160

120

(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.

DS(on)

.

Fig.2 DC SOAR.

October 1992 3

(1) Short-time operation during mismatch.
(2) Continuous operation.
Total device; both sections equally loaded.

Fig.3 Power/temperature derating curves.

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF545

CHARACTERISTICS (per section)

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID = 10 mA 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−1mA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 40 mA; VDS= 10 V 1 − 4V
forward transconductance ID= 1.2 A; VDS= 10 V 600 900 − mS
drain-source on-state resistance ID= 1.2 A; VGS= 10 V − 0.85 1.25 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 4.8 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 32 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 24 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 6.4 − pF

handbook, halfpage

4

T.C

(mV/K)

2

0

−2

−4

10

VDS= 10 V.

−2

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current,
typical values per section.

MDA504

handbook, halfpage

6

I

D

(A)

4

2

0

0

VDS= 10 V; Tj= 25 °C.

5

10 20

MDA505

15

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage, typical values per section.

October 1992 4