Philips BLF543 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF543
UHF power MOS transistor
Product specification
October 1992
Philips Semiconductors Product specification
UHF power MOS transistor BLF543
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability
• Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
The devices are marked with a
V
indication intended for matched
GS
pair applications.
PINNING - SOT171
PIN DESCRIPTION
1 source
2 source
3 gate
4 drain
5 source
6 source
PIN CONFIGURATION
page
1
3
5
Top view
2
4
6
MBA931 - 1
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source class-B circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
CW, class-B 500 28 10 > 12 > 50
CW, class-B 960 28 10 typ. 8 typ. 50
October 1992 2
D
Philips Semiconductors Product specification
UHF power MOS transistor BLF543
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 2A
total power dissipation up to Tmb=25°C − 25 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to mounting base 7 K/W
thermal resistance from mounting base to heatsink 0.4 K/W
10
handbook, halfpage
I
D
(A)
1
−1
10
(1) Current in this area may be limited by R
(2) Tmb=25°C.
(1)
11010
Fig.2 DC SOAR.
(2)
VDS (V)
.
DS(on)
MRA991
2
40
handbook, halfpage
P
tot
(W)
30
20
10
0
0 40 80 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
(1)
(2)
Fig.3 Power/temperature derating curves.
120
MDA488
Th (°C)
October 1992 3
Philips Semiconductors Product specification
UHF power MOS transistor BLF543
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID = 5 mA 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−0.5 mA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 20 mA; VDS= 10 V 1 − 4V
gate-source voltage difference of
ID= 20 mA; VDS= 10 V −−100 mV
matched pairs
forward transconductance ID= 0.6 A; VDS= 10 V 300 450 − mS
drain-source on-state resistance ID= 0.6 A; VGS= 10 V − 1.7 2.5 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 2.4 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 16 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 12 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 3.2 − pF
handbook, halfpage
4
T.C.
(mV/K)
2
0
−2
−4
10
VDS= 10 V.
−2
−1
10
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MDA491
handbook, halfpage
1
3
I
D
(A)
2
1
0
0
VDS= 10 V; Tj= 25 °C.
5
10 20
MDA495
15
V
(V)
GS
Fig.5 Drain current as a function of gate-source
voltage, typical values.
October 1992 4
Philips Semiconductors Product specification
UHF power MOS transistor BLF543
handbook, halfpage
4
R
DSon
(Ω)
3
2
1
0
0 50 100 150
ID= 0.6 A; VGS= 10 V.
Tj ( °C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
MDA496
50
handbook, halfpage
C
(pF)
40
30
20
10
0
010
VGS= 0; f = 1 MHz.
20 30
MDA497
C
is
C
os
V
(V)
DS
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
20
handbook, halfpage
C
rs
(pF)
16
12
8
4
0
010
VGS= 0; f = 1 MHz.
20 30
MDA498
V
(V)
DS
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
October 1992 5
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