Philips BLF542 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF542
UHF power MOS transistor
Product specification
October 1992
Philips Semiconductors Product specification
UHF power MOS transistor BLF542
FEATURES
• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the UHF frequency
range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
PIN DESCRIPTION
1 source
2 source
3 gate
4 drain
5 source
6 source
PIN CONFIGURATION
alfpage
1
3
5
Top view
2
4
6
MBA931 - 1
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
mb
f
(MHz)
V
(V)
DS
P
(W)
L
G
P
(dB)
(%)
CW, class-B 500 28 5 > 13 > 50
October 1992 2
η
D
Philips Semiconductors Product specification
UHF power MOS transistor BLF542
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 1.5 A
total power dissipation Tmb=25°C − 20 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to mounting base 8.8 K/W
thermal resistance from mounting base to heatsink 0.4 K/W
10
handbook, halfpage
I
D
(A)
1
−1
10
−2
10
(1) Current in this area may be limited by R
(2) Tmb=25°C.
(1)
101
Fig.2 DC SOAR.
V
DS
DS(on)
(2)
(V)
MRA735
2
10
.
35
handbook, halfpage
P
tot
(W)
30
25
20
15
10
5
0
10 30 50 70 90 110 130
(1) Continuous operation.
(2) Short time operation during mismatch.
(2)
(1)
MRA734
Th (
o
C)
Fig.3 Power derating curves.
October 1992 3
Philips Semiconductors Product specification
UHF power MOS transistor BLF542
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage ID= 0.1 mA; VGS=0 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−10 µA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 10 mA; VDS= 10 V 2 − 4.5 V
forward transconductance ID= 0.3 A; VDS= 10 V 160 240 − mS
drain-source on-resistance ID= 0.3 A; VGS= 15 V − 3.3 5 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 1.4 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 14 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 9.4 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 1.7 − pF
handbook, halfpage
4
T.C.
(mV/K)
2
0
–2
–4
0 100 200 300
VDS= 10 V.
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MBB777
1.5
handbook, halfpage
I
D
(A)
1
0.5
0
0
VDS= 10 V; Tj= 25 °C.
51015
MBB759
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
October 1992 4
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