Philips blf522 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF522
UHF power MOS transistor
Product specification
September 1992
Philips Semiconductors Product specification
UHF power MOS transistor BLF522
FEATURES
• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
PIN DESCRIPTION
1 source
2 source
3 gate
4 drain
5 source
6 source
PIN CONFIGURATION
alfpage
1
3
5
Top view
2
4
6
MBA931 - 1
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source class-B circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
GP
(dB)
(%)
CW, class-B 500 12.5 5 > 10 > 50
September 1992 2
η
D
Philips Semiconductors Product specification
UHF power MOS transistor BLF522
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
i
THERMAL RESISTANCE
drain-source voltage − 40 V
gate-source voltage − 20 V
DC drain current − 1.8 A
total power dissipation up to Tmb=25°C − 20 W
storage temperature −65 150 °C
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS
R
th j-mb
thermal resistance from junction to mounting
Tmb=25°C; P
= 20 W 8.8 K/W
tot
base
R
th mb-h
thermal resistance from mounting base to
Tmb=25°C; P
= 20 W 0.4 K/W
tot
heatsink
handbook, halfpage
5
I
D
(A)
1
0.1
1 10 100
MRA990
(2)(1)
VDS (V)
35
handbook, halfpage
P
tot
(W)
30
25
20
15
10
5
0
0 20 40 60 80 100 120
THERMAL
RESISTANCE
MRA427
(2)
(1)
o
Th (
C)
(1) Current in this area may be limited by R
(2) Tmb=25°C.
DS(on)
.
Fig.2 DC SOAR.
September 1992 3
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.3 Power/temperature derating curves.
Philips Semiconductors Product specification
UHF power MOS transistor BLF522
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 5 mA 40 −−V
drain-source leakage current VGS= 0; VDS= 12.5 V −−0.5 mA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 50 mA; VDS= 10 V 2 − 4.5 V
forward transconductance ID= 0.7 A; VDS= 10 V 200 270 − mS
drain-source on-state resistance ID= 0.7 A; VGS= 15 V − 1.8 2.7 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 2.3 − A
input capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 14 − pF
output capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 17 − pF
feedback capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 3 − pF
25
handbook, halfpage
T.C.
(mV/K)
15
5
−5
10 10
VDS= 10 V.
2
3
10
ID(mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MRA254
handbook, halfpage
4
10
3
I
D
(A)
2
1
0
0
VDS= 10 V; Tj= 25 °C.
4 8 12 16 20
MRA249
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992 4
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