Philips BLF521 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF521
UHF power MOS transistor
Product specification
November 1992
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
FEATURES
• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT172D studless envelope,
with a ceramic cap. All leads are
isolated from the mounting base.
PINNING - SOT172D
PIN CONFIGURATION
ok, halfpage
2
Top view
1
3
g
MBB072
4
MSB007
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PIN DESCRIPTION
1 source
2 gate
3 drain
4 source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
amb
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
(%)
CW, class-B 500 12.5 2 > 10 > 50
η
D
November 1992 2
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage − 40 V
gate-source voltage − 20 V
DC drain current − 1A
total power dissipation up to Tmb=25°C − 10 W
storage temperature −65 150 °C
junction temperature − 200 °C
SYMBOL PARAMETER
R
th j-mb
R
th j-a
thermal resistance from junction to mounting base 17.5 K/W
thermal resistance from junction to ambient (note 1) 75 K/W
Note
1. Mounted on printed circuit board, see Fig.12.
MRA989
I
(A)
5
D
1
handbook, halfpage
(1)
(2)
16
handbook, halfpage
P
tot
(W)
12
8
4
THERMAL
RESISTANCE
MDA486
(2)
(1)
0.1
1 10 100
(1) Current in this area may be limited by R
(2) Tmb=25°C.
VDS (V)
.
DS(on)
Fig.2 DC SOAR.
November 1992 3
0
0 40 80 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
120
Fig.3 Power/temperature derating curves.
Tmb ( °C)
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 3 mA 40 −− V
drain-source leakage current VGS= 0; VDS= 12.5 V −−10 µA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1 µA
gate-source threshold voltage ID= 3 mA; VDS=10V 2 − 4.5 V
forward transconductance ID= 0.3 A; VDS= 10 V 80 135 − mS
drain-source on-state resistance ID= 0.3 A; VGS=15V − 3.5 4 Ω
on-state drain current VGS= 15 V; VDS=10V − 1.3 − A
input capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 5.3 − pF
output capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 7.8 − pF
feedback capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 1.8 − pF
15
handbook, halfpage
T.C
(mV/K)
10
5
0
−5
1
VDS=10V.
10 10
2
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MDA485
1600
handbook, halfpage
I
D
(mA)
1200
800
400
0
3
10
04 20
VDS=10V;Tj=25°C.
81216
MDA484
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
November 1992 4
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
handbook, halfpage
5
R
DSon
(Ω)
4
3
2
1
0
04080
ID= 0.3A; VGS=15V.
120
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
MDA483
160
30
handbook, halfpage
C
(pF)
20
10
0
0
VGS= 0; f = 1 MHz.
C
os
C
is
4
816
MDA482
12
V
(V)
DS
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
handbook, halfpage
5
C
rs
(pF)
4
3
2
1
0
048
VGS= 0; f = 1 MHz.
12
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
MDA481
16
November 1992 5
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