Philips blf404 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D175
BLF404
UHF power MOS transistor
Product specification
Supersedes data of 1997 Oct 28
1998 Jan 29
Philips Semiconductors Product specification
UHF power MOS transistor BLF404
FEATURES
• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.
APPLICATIONS
• Communication transmitters in the VHF/UHF range with
a nominal supply voltage of 12.5 V.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
power transistor in an 8-lead SOT409A SMD package with
a ceramic cap.
PINNING
PIN DESCRIPTION
1, 8 source
2, 3 gate
4, 5 source
6, 7 drain
handbook, halfpage
85
14
Top view
MBK150
Fig.1 Simplified outline SOT409A.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
≤ 60 °C in a common source test circuit.
mb
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
CW class-AB 500 12.5 4 ≥10 ≥50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1998 Jan 29 2
Philips Semiconductors Product specification
UHF power MOS transistor BLF404
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
drain-source voltage − 40 V
gate-source voltage −±20 V
DC drain current − 1.5 A
total power dissipation Tmb≤ 85 °C − 8.3 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to mounting base Tmb≤ 85 °C, P
= 8.3 W 12.1 K/W
tot
10
handbook, halfpage
I
D
(A)
1
−1
10
11010
(1) Current in this area may be limited by R
(2) Tmb=85°C.
Fig.2 DC SOAR.
(2)(1)
V
(V)
DS
.
DSon
MGM522
2
1998 Jan 29 3
Philips Semiconductors Product specification
UHF power MOS transistor BLF404
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
I
DSX
R
DSon
g
fs
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 5 mA 40 −−V
gate-source threshold voltage ID= 50 mA; VDS=10V 2 − 4.5 V
drain-source leakage current VGS= 0; VDS= 12.5 V −−0.5 mA
gate-source leakage current VDS= 0; VGS= ±20 V −−1µA
on-state drain current VGS= 15 V; VDS=10V − 2.3 − A
drain-source on-state resistance ID= 0.7 A; VGS=15V − 1.8 2.7 Ω
forward transconductance ID= 0.7 A; VDS= 10 V 200 270 − mS
input capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 14 − pF
output capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 17 − pF
feedback capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 3 − pF
25
handbook, halfpage
T.C.
(mV/K)
15
5
−5
10 10
VDS=10V.
2
3
10
ID(mA)
Fig.3 Temperature coefficient of gate-source
voltage as a function of drain current;
typical values.
MRA254
handbook, halfpage
4
10
3
I
D
(A)
2
1
0
0
VDS= 10V; Tj=25°C.
4 8 12 16 20
MRA249
VGS (V)
Fig.4 Drain current as a function of gate-source
voltage; typical values.
1998 Jan 29 4
Philips Semiconductors Product specification
UHF power MOS transistor BLF404
handbook, halfpage
5
R
DSon
(Ω)
4
3
2
1
0
0 50 100
ID= 0.7 A; VGS=15V.
Tj (
Fig.5 Drain-source on-state resistance as a
function of junction temperature;
typical values.
MRA253
o
C)
150
V
DS
MRA246
(V)
50
handbook, halfpage
C
(pF)
40
30
20
10
0
0
VGS= 0; f = 1 MHz; Tj=25°C.
C
os
C
is
4 8 12 16
Fig.6 Input and output capacitance as functions
of drain-source voltage; typical values.
10
handbook, halfpage
C
rs
(pF)
8
6
4
2
0
0481216
VGS= 0; f = 1 MHz; Tj=25°C.
MRA256
VDS (V)
Fig.7 Feedback capacitance as a function of
drain-source voltage; typical values.
1998 Jan 29 5
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