Philips BLF378 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D091

BLF378

VHF push-pull power MOS
transistor

Product specification
Supersedes data of 1996 Oct 17

1998 Jul 29

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF378

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Broadcast transmitter applications in the VHF frequency
range.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.

CAUTION

This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.

PINNING - SOT262A1

PIN SYMBOL DESCRIPTION

1d
2d
3g
4g

1
2
1
2

drain 1
drain 2
gate 1
gate 2

5 s source

12

g
g

55

Top view

34

MAM098

Fig.1 Simplified outline and symbol.

d

s

d

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

CW, class-AB

=25°C in a push-pull common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

225 50 250

G

(dB)

p

∆G

(dB)

p

(1)

η

(%)

D

>14 <1 >50

typ. 16 typ. 0.6 typ. 55

Note

1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized

input / 25% synchronized output compression in television service (negative modulation, CCIR system).

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1998 Jul 29 2

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF378

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section unless otherwise specified

V

DSS

V

GSS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 110 V
gate-source voltage −±20 V
drain current (DC) − 18 A
total power dissipation Tmb≤ 25 °C total device; both sections equally loaded − 500 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base total device; both sections

0.35 K/W

equally loaded

thermal resistance from mounting base to heatsink total device; both sections

0.15 K/W

equally loaded

100

handbook, halfpage

I

D

(A)

(1)

10

1

1 10 100

Total device; both sections equally loaded.
(1) Current is this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

(2)

DSon

MRA988

V (V)

DS

.

500

500

handbook, halfpage

P

tot

(W)

400

300

200

100

0

0 40 80 160

Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.

(1)

Fig.3 Power derating curves.

(2)

120

MGE616

Th (°C)

1998 Jul 29 3

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF378

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

g

fs1/gfs2

R

DSon

I

DSX

C

is

C

os

C

rs

C

d-f

drain-source breakdown voltage VGS= 0; ID=50mA 110 −−V
drain-source leakage current VGS= 0; VDS=50V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 50 mA; VDS=10V 2.0 − 4.5 V
gate-source voltage difference

ID= 50 mA; VDS=10V −−100 mV

of both transistor sections
forward transconductance ID= 5 A; VDS= 10 V 4.5 6.2 − S
forward transconductance ratio

ID= 5 A; VDS= 10 V 0.9 − 1.1

of both transistor sections
drain-source on-state resistance ID= 5 A; VGS=10V − 0.2 0.3 Ω
on-state drain current VGS= 10 V; VDS=10V − 25 − A
input capacitance VGS= 0; VDS= 50 V; f = 1 MHz − 480 − pF
output capacitance VGS= 0; VDS= 50 V; f = 1 MHz − 190 − pF
feedback capacitance VGS= 0; VDS= 50 V; f = 1 MHz − 14 − pF
drain-flange capacitance − 5.4 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

10

VDS=10V.

−2

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current; typical
values per section.

MGE623

30

handbook, halfpage

I

D

(A)

20

10

0

0

VDS= 10V; Tj=25°C.

5

10

MGE622

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

15

1998 Jul 29 4

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF378

400

handbook, halfpage

R

DSon

(mΩ)

300

200

100

0

0 50 100 150

ID= 5A; VGS=10V.

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values per section.

MGE621

C

is

C

os

VDS (V)

MGE615

1200

handbook, halfpage

C

(pF)

800

400

0

0

VGS= 0; f= 1 MHz.

20

40

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per
section.

60

400

handbook, halfpage

C

rs

(pF)

300

200

100

0

010 50

VGS= 0; f = 1 MHz.

20 30 40

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per
section.

MGE620

1998 Jul 29 5