Philips BLF348 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF348
VHF linear push-pull power MOS
transistor
Product specification
October 1992
Philips Semiconductors Product specification
VHF linear push-pull power MOS transistor BLF348
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT262 A1 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING − SOT262A1
PIN CONFIGURATION
, halfpage
12
g
2
g
1
55
Top view
34
MSB008
MBB157
d
2
s
d
1
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
Product and environment safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance in a push-pull common source test circuit.
d
im
(dB)
(note 1)
P
o sync
(W)
G
(dB)
p
MODE OF OPERATION
f
vision
(MHz)
V
(V)
DS
I
(A)
D
T
h
(°C)
class-A 224.25 28 2 × 4.6 70 −52 > 67 > 11
224.25 28 2 × 4.6 25 −52 typ. 75 typ. 13
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to
peak synchronization level.
October 1992 2
Philips Semiconductors Product specification
VHF linear push-pull power MOS transistor BLF348
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
±V
GSS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 25 A
total power dissipation up to Tmb = 25 °C; total device;
− 500 W
both sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS
R
th j-mb
R
th mb-h
2
10
handbook, halfpage
I
D
(A)
10
1
110
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
(1)
(2)
V
(V)
DS
MRA933
total device;
both sections equally loaded
total device;
both sections equally loaded
500
handbook, halfpage
P
tot
(W)
400
300
200
100
2
10
0
0 40 80 160
(1)
(2)
THERMAL
RESISTANCE
0.35 K/W
0.15 K/W
MGE616
120
Th (°C)
(1) Current is this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.
DS(on)
.
Fig.2 DC SOAR.
October 1992 3
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.3 Power/temperature derating curves.
Philips Semiconductors Product specification
VHF linear push-pull power MOS transistor BLF348
CHARACTERISTICS (per section)
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
g
fs
g
fs1/gfs2
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS = 0; ID = 0.1 A 65 −− V
drain-source leakage current VGS = 0; VDS = 28 V −−5mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 0.1 A; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of
ID = 0.1 A; VDS = 10 V −−100 mV
both transistor sections
forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S
forward transconductance ratio of
ID = 8 A; VDS = 10 V 0.9 − 1.1
both transistor sections
drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 37 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 495 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 340 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 40 − pF
handbook, halfpage
0
T.C.
(mV/K)
−1
−2
−3
−4
−5
−1
10
VDS= 10 V.
110
I
(A)
D
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
MGP229
15
MGP230
VGS (V)
60
handbook, halfpage
I
D
(A)
40
20
0
0 5 10 20
VDS= 10 V; Tj=25°C.
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
October 1992 4
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