Philips BLF346 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF346
VHF power MOS transistor
Product specification
Supersedes data of September 1992
1996 Oct 02
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Linear amplifier applications in Television transmitters
and transposers.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119 flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(V
) information is provided for matched pair
GS
applications. Refer to the General Section of Data
Handbook SC19a for further information.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING-SOT119
PIN SYMBOL DESCRIPTION
1 s source
2 s source
3 g gate
4 d drain
5 s source
6 s source
handbook, halfpage
1
3
2
4
g
65
MAM268
d
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a linear amplifier.
MODE OF
OPERATION
f
(MHz)
V
(V)
DS
Class-A 224.25 28 3
I
(A)
D
T
(°C)
h
P
(W)
L
G
P
(dB)
d
(dB)
70 >24 >14 −52
25 typ. 30 typ. 16.5 −52
im
(1)
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to
peak synchronization level.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 02 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
GSS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage − 65 V
gate-source voltage −±20 V
DC drain current − 13 A
total power dissipation up to Tmb=25°C − 130 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to
Tmb=25°C; P
= 130 W 1.35 K/W
tot
mounting base
thermal resistance from mounting
Tmb=25°C; P
= 130 W 0.2 K/W
tot
base to heatsink
50
handbook, halfpage
I
D
(A)
10
(1)
1
−1
10
110
(1) Current is this area may be limited by R
(2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
VDS (V)
DSon.
MRA931
200
handbook, halfpage
P
tot
(W)
150
100
50
2
10
0
0 50 100 150
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2)
(1)
MGG104
Th (°C)
Fig.3 Power derating curves.
1996 Oct 02 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GS
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID=50mA 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage VDS=10V; ID=50mA 2 − 4.5 V
gate-source voltage difference
VDS=10V; ID=50mA −−100 mV
of matched pairs
forward transconductance VDS=10V; ID=5A 3 4.2 − S
drain-source on-state resistance VGS= 10 V; ID=5A − 0.2 0.3 Ω
on-state drain current VGS= 10 V; VDS=10V − 22 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 225 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 180 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 25 − pF
handbook, halfpage
2
T.C.
(mV/K)
0
−2
−4
−6
−2
10
VDS=10V.
−1
10
110
MGG105
ID (A)
Fig.4 Temperature coefficient of gate-source voltage
as a function of drain current; typical values.
40
handbook, halfpage
I
D
(A)
30
20
10
0
0 5 10 20
VDS= 10 V; Tj=25°C.
MGG106
15
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage; typical values.
1996 Oct 02 4
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
340
handbook, halfpage
R
DS on
(mΩ)
280
220
160
0
ID= 5 A; VGS=10V.
30 150
60 90 120
MGG107
Tj (°C)
Fig.6 Drain-source on-state resistance as a function
of junction temperature; typical values.
C
MRA930
is
DS
(V)V
800
C
(pF)
600
C
os
400
200
0
010203040
VGS= 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
300
handbook, halfpage
C
rs
(pF)
200
100
0
01020 40
VGS= 0; f = 1 MHz.
30
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
MGG108
1996 Oct 02 5
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