Philips BLF277 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF277

VHF power MOS transistor

Product specification

September 1992

Philips Semiconductors Product specification

VHF power MOS transistor BLF277

FEATURES

• High power gain

• Easy power control

• Gold metallization ensures

excellent reliability

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.

The transistor is encapsulated in a
6-lead, SOT119 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

A marking code, showing gate-source
voltage (V

) information is provided

GS

for matched pair applications. Refer
to the ‘General' section for further
information.

PIN CONFIGURATION

ndbook, halfpage

1

3

MSB006

2

d

4

65

g

MBB072

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

PINNING - SOT119

PIN DESCRIPTION

1 source
2 source
3 gate
4 drain
5 source
6 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

WARNING

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common source circuit.

h

(MHz)

f

V

(V)

DS

P

(W)

L

G

(dB)

p

(%)

CW, class-B 175 50 150 > 14 > 50

η

D

September 1992 2

Philips Semiconductors Product specification

VHF power MOS transistor BLF277

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

drain-source voltage − 110 V
gate-source voltage − 20 V
DC drain current − 16 A
total power dissipation up to Tmb = 25 °C − 220 W
storage temperature −65 150 °C
junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS

R

th j-mb

thermal resistance from junction to

Tmb = 25 °C; P

= 220 W 0.8 K/W

tot

mounting base

R

th mb-h

thermal resistance from mounting

Tmb = 25 °C; P

= 220 W 0.2 K/W

tot

base to heatsink

2

10

handbook, halfpage

I

D

(A)

10

1

−1

10

110

(1) (2)

2

10

MRA906

3

DS

(V)

10

V

300

handbook, halfpage

P

tot

(W)

200

100

0

050

THERMAL

RESISTANCE

(1)

(2)

100 150

Th (°C)

MGP219

(1) Current in this area may be limited by R
(2) Tmb=25°C.

DS(on)

.

Fig.2 DC SOAR.

September 1992 3

(1) Continuous operation.
(2) Short-time operation during mismatch.

Fig.3 Power/temperature derating curves.

Philips Semiconductors Product specification

VHF power MOS transistor BLF277

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS = 0; ID = 50 mA 110 −− V
drain-source leakage current VGS = 0; VDS = 50 V −−2.5 mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of

ID = 50 mA; VDS = 10 V −−100 mV

matched pairs
forward transconductance ID = 5 A; VDS = 10 V 4.5 6.2 − S
drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 25 − A
input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 480 − pF
output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 190 − pF
feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 14 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

VDS= 10 V.

−2

−1

10

1

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MGP220

30

handbook, halfpage

I

D

(A)

20

10

0

1010

0 5 10 15

VDS = 10 V; Tj = 25 °C.

MGP221

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992 4