Philips BLF276 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF276
VHF power MOS transistor
Product specification
December 1997
Philips Semiconductors Product specification
VHF power MOS transistor BLF276
FEATURES
• High power gain
• Easy power control
• Good thermal stability
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range. The transistor delivers an
output power of 100 W in class-B
operation at a supply voltage of 50 V.
The transistor is encapsulated in a
6-lead, SOT119 pill-package
envelope, with a ceramic cap.
PINNING - SOT119D3
PIN DESCRIPTION
1 source
2 source
3 gate
4 drain
5 source
6 source
PIN CONFIGURATION
age
1
3
Top view
MSA308
2
d
4
g
65
MBB072
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
mb
f
(MHz)
V
(V)
DS
P
(W)
L
G
P
(dB)
(%)
CW, class-B 225 50 100 ≥ 13 ≥ 50
108 50 100 ≥ 18 ≥ 60
December 1997 2
η
D
Philips Semiconductors Product specification
VHF power MOS transistor BLF276
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-mb
drain-source voltage − 110 V
gate-source voltage − 20 V
DC drain current − 9A
total power dissipation up to Tmb = 25 °C − 150 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to
P
= 150 W; Tmb=25°C max. 1.17 K/W
tot
mounting base
10
handbook, halfpage
I
D
(A)
(1)
1
−1
10
110
(1) Current is this area may be limited by R
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
MRA936
(2)
2
10
V
(V)
DS
.
DS(on)
3
10
240
handbook, halfpage
P
tot
(W)
200
(2)
160
120
80
40
0
020
(1) Continuous operation.
(2) Short-time operation during mismatch.
(1)
40 60 80 100
MRA943
120 140
Tmb (°C)
Fig.3 Power/temperature derating curves.
December 1997 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF276
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS = 0; ID = 30 mA 110 −−V
drain-source leakage current VGS = 0; VDS = 50 V −−1mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V
forward transconductance ID = 3 A; VDS = 10 V 2.7 −−S
drain-source on-state resistance ID = 3 A; VGS = 10 V − 0.4 0.6 Ω
on-state drain current VGS = 10 V; VDS = 10 V 8 12 − A
input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 240 − pF
output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 95 − pF
feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 7 − pF
handbook, halfpage
0
TC
(mV/K)
−1
−2
−3
−4
−5
−2
VDS= 10 V.
10
−1
1
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MRA945
16
handbook, halfpage
I
D
(A)
12
8
4
0
1010
02468
VDS= 10 V.
MRA940
10
12 14
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
December 1997 4
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