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DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D379
BLF1049
Base station LDMOS transistor
Product specification
Supersedes data of 2001 Dec 05
2003 May 14
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Philips Semiconductors Product specification
Base station LDMOS transistor BLF1049
FEATURES
• Typical performance at a supply voltage of 27 V:
– 1-tone CW; IDQ= 1000 mA
– Output power = 125 W
– Gain = 16.5 dB
– Efficiency = 54%
– EDGE output power = 45 W (AV)
– ACPR400 = −64 dBc at 400 kHz
(EDGE; IDQ= 750 mA)
– EVM = 2% rms (AV)
(EDGE; IDQ= 750 mA)
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (800 to 1000 MHz)
• Internally matched for ease of use.
APPLICATIONS
• RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier applications in the
800 to 1000 MHz frequency range.
DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 800 MHz to 1000 MHz.
PINNING - SOT502A
PIN DESCRIPTION
1 drain
2 gate
3 source; connected to flange
handbook, halfpage
Top view
1
2
3
MBK394
Fig.1 Simplified outline SOT502A .
QUICK REFERENCE DATA
Typical RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
2-tone
1-tone CW 125 16.5 54 −−−
920
P
L
(W)
125 (PEP) 15.5 37 −32 −−
G
(dB)
p
η
(%)
D
d
(dBc)
3
ACPR 400
(dBc)
EVM
% rms
(AV)
GSM EDGE 45 (AV) 15 32 −−64 2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
T
stg
T
j
drain-source voltage − 75 V
gate-source voltage −±15 V
storage temperature −65 150 °C
junction temperature − 200 °C
2003 May 14 2
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Philips Semiconductors Product specification
Base station LDMOS transistor BLF1049
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-c
R
th j-h
Notes
1. Thermal resistance is determined under RF operating conditions.
2. Depending on mounting condition in application.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
thermal resistance from junction to case Th=25°C, PL= 35 W (AV), note 1 0.42 K/W
thermal resistance from junction to heatsink Th=25°C, PL= 35 W (AV), note 2 0.62 K/W
drain-source breakdown voltage VGS= 0; ID= 3 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID= 300 mA 4 − 5V
drain-source leakage current VGS= 0; VDS=36V −−3µA
on-state drain current VGS=V
+9V; VDS=10V 45 −−A
GSth
gate leakage current VGS= ±20 V; VDS=0 −−1µA
forward transconductance VDS= 10 V; ID=10A − 9 − S
drain-source on-state resistance VGS=9V; ID=10A − 60 − mΩ
APPLICATION INFORMATION
RF performance in a common source class-AB circuit; V
Mode of operation: 2-tone CW, 100 kHz spacing; I
=27V; Th=25°C; unless otherwise specified.
DS
= 1130 mA; f = 890 MHz
DQ
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
η
D
gain power PL= 125 W (PEP) 14.6 15.5 − dB
drain efficiency 33 37 − %
IRL input return loss −−12 −6dB
d
3
third order inter modulation
−−32 −25 dBc
distortion
Mode of operation: GSM EDGE; IDQ= 750 mA; f = 920 MHz
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
η
D
gain power PL=45W(AV) − 15 − dB
drain efficiency − 32 − %
ACPR 400 adjacent channel power ratio −−64 − dBc
EVM (AV) EVM rms average signal distortion − 2 − %
EVM peak EVM rms peak signal distortion − 2.2 − %
Mode of operation: 1-tone CW; I
= 1000 mA; f = 920 MHz
DQ
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
η
D
gain power PL=P
= 125 W − 16.5 − dB
L 1 dB
drain efficiency − 54 − %
2003 May 14 3
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Philips Semiconductors Product specification
Base station LDMOS transistor BLF1049
16
handbook, halfpage
G
p
(dB)
15
14
13
12
010
VDS= 27V; f = 920 MHz; IDQ= 750 mA; Th≤ 25 °C.
G
p
20 30 40
η
D
MLE061
PL (AV)(W)
Fig.2 GSM EDGE power gain and efficiency as
functions of load power; typical values.
40
η
D
(%)
30
20
10
0
50
−62
handbook, halfpage
ACPR
400
(dBc)
−64
EVM
−66
ACPR400
−68
−70
010
VDS= 27 V; f = 920 MHz; IDQ= 750 mA; Th≤ 25 °C.
20 30 40
MLE062
P
(AV)(W)
L
2
EVM
rms
(AV)
(%)
1.5
1
0.5
0
50
Fig.3 GSM EDGE ACPR400 and EVM as
functions of average load power; typical
values.
18
handbook, halfpage
G
p
(dB)
17
16
15
0 50 100 150
VDS= 27 V; f = 920 MHz; IDQ= 1000 mA;
MLE063
η
D
G
p
PL (AV) (W)
Fig.4 1-tone CW power gain and efficiency as
functions of load power; typical values.
60
40
20
0
η
(%)
MLE064
50
handbook, halfpage
η
(%)
40
D
30
20
10
0
0 50 100 150
VDS= 27 V; IDQ= 1.1 A; f1= 920.0 MHz; f2= 920.1 MHz.
(1) η at Th= −40 °C.
(2) η at Th=20°C.
(3) η at Th=80°C.
(4)
η(1,2,3)
(5)
(6)
PL (PEP) (W)
(4) gain at Th= −40 °C.
(5) gain at Th=20°C.
(6) gain at Th=80°C.
17
16.5
16
15.5
15
14.5
14
gain
(dB)
Fig.5 2-tone power gain and efficiency as
functions of load power at different
temperatures.
2003 May 14 4