Philips BLF1049 Technical data

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book, halfpage

M3D379

BLF1049

Base station LDMOS transistor

Product specification
Supersedes data of 2001 Dec 05

2003 May 14

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

FEATURES

• Typical performance at a supply voltage of 27 V:
– 1-tone CW; IDQ= 1000 mA
– Output power = 125 W
– Gain = 16.5 dB
– Efficiency = 54%
– EDGE output power = 45 W (AV)
– ACPR400 = −64 dBc at 400 kHz

(EDGE; IDQ= 750 mA)

– EVM = 2% rms (AV)

(EDGE; IDQ= 750 mA)

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (800 to 1000 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier applications in the
800 to 1000 MHz frequency range.

DESCRIPTION

125 W LDMOS power transistor for base station
applications at frequencies from 800 MHz to 1000 MHz.

PINNING - SOT502A

PIN DESCRIPTION

1 drain
2 gate
3 source; connected to flange

handbook, halfpage

Top view

1

2

3

MBK394

Fig.1 Simplified outline SOT502A .

QUICK REFERENCE DATA

Typical RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

f

(MHz)

2-tone
1-tone CW 125 16.5 54 −−−

920

P

L

(W)

125 (PEP) 15.5 37 −32 −−

G

(dB)

p

η

(%)

D

d

(dBc)

3

ACPR 400

(dBc)

EVM

% rms

(AV)

GSM EDGE 45 (AV) 15 32 −−64 2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

T

stg

T

j

drain-source voltage − 75 V
gate-source voltage −±15 V
storage temperature −65 150 °C
junction temperature − 200 °C

2003 May 14 2

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-c

R

th j-h

Notes

1. Thermal resistance is determined under RF operating conditions.

2. Depending on mounting condition in application.

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

thermal resistance from junction to case Th=25°C, PL= 35 W (AV), note 1 0.42 K/W
thermal resistance from junction to heatsink Th=25°C, PL= 35 W (AV), note 2 0.62 K/W

drain-source breakdown voltage VGS= 0; ID= 3 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID= 300 mA 4 − 5V
drain-source leakage current VGS= 0; VDS=36V −−3µA
on-state drain current VGS=V

+9V; VDS=10V 45 −−A

GSth

gate leakage current VGS= ±20 V; VDS=0 −−1µA
forward transconductance VDS= 10 V; ID=10A − 9 − S
drain-source on-state resistance VGS=9V; ID=10A − 60 − mΩ

APPLICATION INFORMATION

RF performance in a common source class-AB circuit; V

Mode of operation: 2-tone CW, 100 kHz spacing; I

=27V; Th=25°C; unless otherwise specified.

DS

= 1130 mA; f = 890 MHz

DQ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

η

D

gain power PL= 125 W (PEP) 14.6 15.5 − dB

drain efficiency 33 37 − %
IRL input return loss −−12 −6dB
d

3

third order inter modulation

−−32 −25 dBc

distortion

Mode of operation: GSM EDGE; IDQ= 750 mA; f = 920 MHz

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

η

D

gain power PL=45W(AV) − 15 − dB

drain efficiency − 32 − %
ACPR 400 adjacent channel power ratio −−64 − dBc
EVM (AV) EVM rms average signal distortion − 2 − %
EVM peak EVM rms peak signal distortion − 2.2 − %

Mode of operation: 1-tone CW; I

= 1000 mA; f = 920 MHz

DQ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

η

D

gain power PL=P

= 125 W − 16.5 − dB

L 1 dB

drain efficiency − 54 − %

2003 May 14 3

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

16

handbook, halfpage

G

p

(dB)

15

14

13

12

010

VDS= 27V; f = 920 MHz; IDQ= 750 mA; Th≤ 25 °C.

G

p

20 30 40

η

D

MLE061

PL (AV)(W)

Fig.2 GSM EDGE power gain and efficiency as

functions of load power; typical values.

40

η

D

(%)

30

20

10

0

50

−62

handbook, halfpage

ACPR

400

(dBc)

−64
EVM

−66

ACPR400

−68

−70

010

VDS= 27 V; f = 920 MHz; IDQ= 750 mA; Th≤ 25 °C.

20 30 40

MLE062

P

(AV)(W)

L

2

EVM

rms

(AV)

(%)

1.5

1

0.5

0

50

Fig.3 GSM EDGE ACPR400 and EVM as

functions of average load power; typical
values.

18

handbook, halfpage

G

p

(dB)

17

16

15

0 50 100 150

VDS= 27 V; f = 920 MHz; IDQ= 1000 mA;

MLE063

η

D

G

p

PL (AV) (W)

Fig.4 1-tone CW power gain and efficiency as

functions of load power; typical values.

60

40

20

0

η

(%)

MLE064

50

handbook, halfpage

η

(%)

40

D

30

20

10

0

0 50 100 150

VDS= 27 V; IDQ= 1.1 A; f1= 920.0 MHz; f2= 920.1 MHz.

(1) η at Th= −40 °C.
(2) η at Th=20°C.
(3) η at Th=80°C.

(4)

η(1,2,3)

(5)

(6)

PL (PEP) (W)

(4) gain at Th= −40 °C.
(5) gain at Th=20°C.
(6) gain at Th=80°C.

17

16.5

16

15.5

15

14.5

14

gain
(dB)

Fig.5 2-tone power gain and efficiency as

functions of load power at different
temperatures.

2003 May 14 4