Datasheet BLF1049 Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

book, halfpage

M3D379

BLF1049

Base station LDMOS transistor

Product specification
Supersedes data of 2001 Dec 05

2003 May 14

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

FEATURES

• Typical performance at a supply voltage of 27 V:
– 1-tone CW; IDQ= 1000 mA
– Output power = 125 W
– Gain = 16.5 dB
– Efficiency = 54%
– EDGE output power = 45 W (AV)
– ACPR400 = −64 dBc at 400 kHz

(EDGE; IDQ= 750 mA)

– EVM = 2% rms (AV)

(EDGE; IDQ= 750 mA)

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (800 to 1000 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier applications in the
800 to 1000 MHz frequency range.

DESCRIPTION

125 W LDMOS power transistor for base station
applications at frequencies from 800 MHz to 1000 MHz.

PINNING - SOT502A

PIN DESCRIPTION

1 drain
2 gate
3 source; connected to flange

handbook, halfpage

Top view

1

2

3

MBK394

Fig.1 Simplified outline SOT502A .

QUICK REFERENCE DATA

Typical RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

f

(MHz)

2-tone
1-tone CW 125 16.5 54 −−−

920

P

L

(W)

125 (PEP) 15.5 37 −32 −−

G

(dB)

p

η

(%)

D

d

(dBc)

3

ACPR 400

(dBc)

EVM

% rms

(AV)

GSM EDGE 45 (AV) 15 32 −−64 2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

T

stg

T

j

drain-source voltage − 75 V
gate-source voltage −±15 V
storage temperature −65 150 °C
junction temperature − 200 °C

2003 May 14 2

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-c

R

th j-h

Notes

1. Thermal resistance is determined under RF operating conditions.

2. Depending on mounting condition in application.

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

thermal resistance from junction to case Th=25°C, PL= 35 W (AV), note 1 0.42 K/W
thermal resistance from junction to heatsink Th=25°C, PL= 35 W (AV), note 2 0.62 K/W

drain-source breakdown voltage VGS= 0; ID= 3 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID= 300 mA 4 − 5V
drain-source leakage current VGS= 0; VDS=36V −−3µA
on-state drain current VGS=V

+9V; VDS=10V 45 −−A

GSth

gate leakage current VGS= ±20 V; VDS=0 −−1µA
forward transconductance VDS= 10 V; ID=10A − 9 − S
drain-source on-state resistance VGS=9V; ID=10A − 60 − mΩ

APPLICATION INFORMATION

RF performance in a common source class-AB circuit; V

Mode of operation: 2-tone CW, 100 kHz spacing; I

=27V; Th=25°C; unless otherwise specified.

DS

= 1130 mA; f = 890 MHz

DQ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

η

D

gain power PL= 125 W (PEP) 14.6 15.5 − dB

drain efficiency 33 37 − %
IRL input return loss −−12 −6dB
d

3

third order inter modulation

−−32 −25 dBc

distortion

Mode of operation: GSM EDGE; IDQ= 750 mA; f = 920 MHz

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

η

D

gain power PL=45W(AV) − 15 − dB

drain efficiency − 32 − %
ACPR 400 adjacent channel power ratio −−64 − dBc
EVM (AV) EVM rms average signal distortion − 2 − %
EVM peak EVM rms peak signal distortion − 2.2 − %

Mode of operation: 1-tone CW; I

= 1000 mA; f = 920 MHz

DQ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

η

D

gain power PL=P

= 125 W − 16.5 − dB

L 1 dB

drain efficiency − 54 − %

2003 May 14 3

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

16

handbook, halfpage

G

p

(dB)

15

14

13

12

010

VDS= 27V; f = 920 MHz; IDQ= 750 mA; Th≤ 25 °C.

G

p

20 30 40

η

D

MLE061

PL (AV)(W)

Fig.2 GSM EDGE power gain and efficiency as

functions of load power; typical values.

40

η

D

(%)

30

20

10

0

50

−62

handbook, halfpage

ACPR

400

(dBc)

−64
EVM

−66

ACPR400

−68

−70

010

VDS= 27 V; f = 920 MHz; IDQ= 750 mA; Th≤ 25 °C.

20 30 40

MLE062

P

(AV)(W)

L

2

EVM

rms

(AV)

(%)

1.5

1

0.5

0

50

Fig.3 GSM EDGE ACPR400 and EVM as

functions of average load power; typical
values.

18

handbook, halfpage

G

p

(dB)

17

16

15

0 50 100 150

VDS= 27 V; f = 920 MHz; IDQ= 1000 mA;

MLE063

η

D

G

p

PL (AV) (W)

Fig.4 1-tone CW power gain and efficiency as

functions of load power; typical values.

60

40

20

0

η

(%)

MLE064

50

handbook, halfpage

η

(%)

40

D

30

20

10

0

0 50 100 150

VDS= 27 V; IDQ= 1.1 A; f1= 920.0 MHz; f2= 920.1 MHz.

(1) η at Th= −40 °C.
(2) η at Th=20°C.
(3) η at Th=80°C.

(4)

η(1,2,3)

(5)

(6)

PL (PEP) (W)

(4) gain at Th= −40 °C.
(5) gain at Th=20°C.
(6) gain at Th=80°C.

17

16.5

16

15.5

15

14.5

14

gain
(dB)

Fig.5 2-tone power gain and efficiency as

functions of load power at different
temperatures.

2003 May 14 4

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

−20

handbook, halfpage

d

3

(dBc)

−30

−40

(1)

−50

−60

0 50 100 150

VDS= 27 V; IDQ= 1.1 A; f1= 920.0 MHz; f2= 920.1 MHz.

(1) Th= −40 °C.
(2) Th=20°C.

(2)
(3)

(3) Th=80°C.

MLE065

PL (PEP) (W)

Fig.6 Third order intermodulation distortion as a

function of load power at different
temperatures.

−30

handbook, halfpage

d

5

(dBc)

−40

−50

−60

−70

0 50 100 150

VDS=27V;IDQ= 1.1 A; f1= 920.0 MHz; f2= 920.1 MHz.

(1) Th= −40 °C.
(2) Th=20°C.

(3)

(1)

(2)

(3) Th=80°C.

MLE066

PL (PEP) (W)

Fig.7 Fifth order intermodulation distortion as a

function of load power at different
temperatures.

−40

handbook, halfpage

d

7

(dBc)

−50

−60

−70

0

(1) Th= −40 °C.
(2) Th=20°C.

50 100 150

VDS= 27 V; IDQ= 1.1 A; f1= 920.0 MHz;

(3) Th=80°C.

MLE067

(3)

(2)

(1)

PL (PEP) (W)

Fig.8 Seventh orderintermodulation distortion as

a function of load power at different
temperatures.

20

handbook, halfpage

gain
(dB)

15

10

5

0

0 50 100 150

VDS= 27 V; f1= 920.0 MHz; f2= 920.1 MHz.

(1) I

=1A.

DQ

(2) IDQ= 1.45 A.

(2)

(1)

(3)

(4)

=1A.

(3) I

DQ

(4) IDQ= 1.45 A.

MLE068

PL (PEP) (W)

Fig.9 Powergain anddrainefficiency asfunctions

of peak envelope load power;
typical values.

40

30

20

10

0

η

(%)

D

2003 May 14 5

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

handbook, halfpage

0

d

im

(dBc)

−20

(1)

−40

(4)

−60

−80

0 50 100 150

VDS= 27 V; f1= 920.0 MHz; f2= 920.1 MHz.

(1) d

; IDQ=1A.

3

(2) d5; IDQ=1A.

(2)
(5)

(6)
(3)

(3) d7; IDQ=1A.
(4) d3; IDQ= 1.3 A.

MLE069

PL (PEP) (W)

(5) d5; IDQ= 1.3 A.
(6) d7; IDQ= 1.3 A.

Fig.10 Intermodulation distortion as a function of

peak envelope load power; typical values.

handbook, halfpage

2

Z

i

(Ω)

1.5

1

0.5

0

−0.5

−1

0.85

Class-AB operation; VDS= 27 V; IDQ= 1125 mA; PL=35W.
Values comprised for different parameters.

r

i

x

i

0.9 0.95 1

MLE070

f (GHz)

Fig.11 Input impedance as afunction of frequency

(series components); typical values.

handbook, halfpage

2

Z

L

(Ω)

1.5

1

0.5

0

−0.5

−1

0.85

Class-AB operation; VDS= 27 V; IDQ= 1125 mA; PL=35W.
Values comprised for different parameters.

0.9 0.95 1

R

L

X

L

MLE071

f (GHz)

Fig.12 Input impedance as afunction of frequency

(series components); typical values.

handbook, halfpage

Fig.13 Definition of transistor impedance.

drain

Z

gate

Z

IN

L

MGS998

2003 May 14 6

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

handbook, full pagewidth

L14

C13

C15

L15 L16

Vsupply

RF out

C18

Vbias

RF in

C2

Q1

R1

C1

L1 L2

C3

C4

L3

L5

L4 L6

C5

C6

L12

L9

C7

L7

L8

C8

Q2

L10

L13

C17

C9

C10

L11

C11
C12
C16

Fig.14 Test circuit for 860 to 900 MHz.

C14

MDB168

2003 May 14 7

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

handbook, full pagewidth

PHILIPS

Input Rev C

Vbias in

C2

Q1

C3

C1L1 L2 L6

R1

C4

L3

L4

PHILIPS

Input Rev C

C5

PHILIPS

Output Rev C

C10

L11

C11
C12

C9

L14

L14

C15

C13

C14

L15

C17

C17

C18

C16

C16

Vd

in

L16

C6C6

L9

L5

C7

L7 L8

L7

C8

BLF1049

L12

L10

L13

PHILIPS

Output Rev C

60 60

4040

Dimensions in mm.
The components are situated on one side of the copper-clad Rogers 6006 printed-circuit board (εr= 6.15); thickness = 25 mm.

The other side is unetched and serves as a ground plane.

MLE073

Fig.15 Component layout for 860 to 900 MHz test circuit.

2003 May 14 8

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

List of components (see Figs 14 and 15)

COMPONENT DESCRIPTION VALUE DIMENSIONS

C1, C6, C13, C14, C15,
C16, C17

C2 multilayer ceramic chip capacitor; note 1 330 nF
C3 multilayer ceramic chip capacitor; note 1 100 nF
C4, C9, C10, C11, C12 tantalum capacitor 10 µF
C5, C18 air trimmer capacitor 5 pF
C7, C8 multilayer ceramic chip capacitor 8.2 pF
R1 potentiometer 1 kΩ
Q1 7808 voltage regulator
Q2 BLF1049 LDMOS transistor
L1 stripline; note 2 5.22 × 0.92 mm
L2 stripline; note 2 6.47 × 0.92 mm
L3 stripline; note 2 5.38 × 4.8 mm
L4 stripline; note 2 2.4 × 0.92 mm
L5 ferroxcube
L6 stripline; note 2 9.73 × 0.92 mm
L7 stripline; note 2 1.82 × 9.3 mm
L8 stripline; note 2 8.15 × 17.9 mm
L9 stripline; note 2 44 × 0.92 mm
L10 stripline; note 2 18.45 × 28.3 mm
L11 stripline; note 2 9.95 × 5.38 mm
L12, L13 stripline; note 2 37.6 × 3.35 mm
L14 stripline; note 2 2.36 × 0.92 mm
L15, L16 stripline; note 2 4.22 × 0.92 mm

multilayer ceramic chip capacitor; note 1 68 pF

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad Rogers 6006 printed-circuit board (ε

2003 May 14 9

= 6.15); thickness = 0.64 mm.

r

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

PACKAGE OUTLINE

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

D

A

3

D

1

U

1

q

1

H

U

2

A

2

b

w

M M

C

2

0 5 10 mm

scale

F

B

C

L

p

w

M MM

AB

1

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.43

0.186

0.135

OUTLINE
VERSION

SOT502A

12.83

12.57

0.505

0.495

c

Db

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

D

1

EE

9.53

9.50

9.25

9.30

0.375

0.374

0.364

0.366

REFERENCES

1

1.14

0.89

0.045

0.035

F

H

19.94

18.92

0.785

0.210

0.745

0.170

2003 May 14 10

L

5.33

4.32

p

3.38

3.12

0.133

0.123

Q

1.70

1.45

0.067

0.057

qw

U

1

34.16

33.91

1.345

1.335

EUROPEAN

PROJECTION

w

U

2

9.91

9.65

0.390

0.380

0.25 0.5127.94

0.01 0.021.100

2

1

ISSUE DATE

99-12-28
03-01-10

Philips Semiconductors Product specification

Base station LDMOS transistor BLF1049

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For datasheets describingmultipletype numbers,the highest-level productstatus determines thedata sheetstatus.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance.When theproduct is infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 May 14 11

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Contact information

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© Koninklijke Philips Electronics N.V. 2003
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The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
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Printed in The Netherlands 613524/03/pp12 Date of release: 2003 May 14 Document order number: 9397750 11123

SCA75