Philips BLF0810-180, BLF0810S-180 Technical data

BLF0810-180

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D379

M3D461

BLF0810-180; BLF0810S-180

Base station LDMOS transistors

Product specification			2003 Jun 12
Supersedes data of 2003 May 09

Philips Semiconductors	Product specification
Base station LDMOS transistors	BLF0810-180; BLF0810S-180

FEATURES

∙Typical CDMA IS95 performance at standard settings

with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:

–Output power = 30 W

–Gain = 16 dB

–Efficiency = 27%

–ACPR = −46 dBc at 750 kHz and BW = 30 kHz

∙Easy power control

∙Excellent ruggedness

∙High power gain

∙Excellent thermal stability

∙Designed for broadband operation (800 to 1000 MHz)

∙Internally matched for ease of use.

PINNING - SOT502A

PIN	DESCRIPTION
1	drain
2	gate
3	source; connected to flange

APPLICATIONS

∙Common source class-AB operation applications in the 860 to 960 MHz frequency range

∙CDMA and multicarrier applications.

DESCRIPTION

180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.

PINNING - SOT502B

PIN	DESCRIPTION
1	drain
2	gate
3	source; connected to flange

handbook, halfpage	1								1
									3
	2	3							2
Top view		MBK394					Top view		MBL105
Fig.1 Simplified outline SOT502A (BLF0810-180).					Fig.2 Simplified outline SOT502B (BLF0810S-180).
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION		f	VDS		PL	Gp		ηD		d3	ACPR 750
		(MHz)	(V)		(W)	(dB)		(%)		(dBc)	(dBc)
Class-AB (2-tone)	f1 = 890.0; f2 = 890.1		27		140 (PEP)	16		39		−28	−
CDMA (IS95)		890	27		30 (AV)	16		27		−	−46

2003 Jun 12

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Philips Semiconductors				Product specification
Base station LDMOS transistors		BLF0810-180; BLF0810S-180
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL	PARAMETER		MIN.	MAX.	UNIT
VDS	drain-source voltage		−	75	V
VGS	gate-source voltage		−	±15	V
Tstg	storage temperature		−65	+150	C
Tj	junction temperature		−	200	°C
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS		VALUE	UNIT
Rth j-c	thermal resistance from junction to case	Th = 25 °C, PL = 35 W (AV), note 1		0.42	K/W
Rth j-hs	thermal resistance from heatsink to junction	Th = 25 °C, PL = 35 W (AV), note 2		0.62	K/W

Notes

1.Thermal resistance is determined under RF operating conditions.

2.Depending on mounting condition in application.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V(BR)DSS	drain-source breakdown voltage	VGS = 0; ID = 3 mA	75	−	−	V
VGSth	gate-source threshold voltage	VDS = 10 V; ID = 300 mA	4	−	5	V
IDSS	drain-source leakage current	VGS = 0; VDS = 36 V	−	−	3	μA
IDSX	on-state drain current	VGS = VGSth + 9 V; VDS = 10 V	45	−	−	A
IGSS	gate leakage current	VGS = ±20 V; VDS = 0	−	−	1	μA
gfs	forward transconductance	VDS = 10 V; ID = 10 A	−	9	−	S
RDSon	drain-source on-state resistance	VGS = 9 V; ID = 10 A	−	60	−	mΩ

2003 Jun 12

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Philips Semiconductors	Product specification
Base station LDMOS transistors	BLF0810-180; BLF0810S-180

APPLICATION INFORMATION

RF performance in a common source class-AB circuit.

VDS = 27 V; IDQ = 1130 mA; f = 890 MHz; Th = 25 °C; unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Mode of operation: 2-tone CW, 100 kHz spacing
Gp	gain power	PL = 90 W (PEP)	15	16	−	dB
ηD	drain efficiency		24	30	−	%
IRL	input return loss		−	−13	−6	dB
d3	third order intermodulation		−	−40	−	dBc
	distortion
Gp	gain power	PL = 125 W (PEP)	−	16	−	dB
ηD	drain efficiency		33	37	−	%
d3	third order intermodulation		−	−32	−27	dBc
	distortion
	ruggedness	VSWR = 15 : 1 through all	no degradation in output power
		phases; PL = 125 W (PEP)
Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13)
Gp	gain power	PL = 30 W (AV)	−	16	−	dB
ηD	drain efficiency	PL = 30 W (AV)	−	27	−	%
ACPR 750	adjacent channel power ratio	at BW = 30 kHz	−	−46	−	dBc

2003 Jun 12

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Philips Semiconductors	Product specification

Base station LDMOS transistors				BLF0810-180; BLF0810S-180
50			MDB158	−20			MDB159
			17
handbook, halfpage			gain	handbook, halfpage
η		(4)		d3
(%)			(dB)
				(dBc)
			16.5
40
				−30
		η(1,2,3)
			16
30		(5)
			15.5	−40
20
			15		(1)
		(6)		−50	(2)
10					(3)
			14.5
0			14	−60
0	50	100	150	0	50	100	150
		PL (PEP) (W)					PL (PEP) (W)

VDS = 27 V; IDQ = 1.1 A; f1 = 890.0 MHz; f2 = 890.1 MHz.				VDS = 27 V; IDQ = 1.1 A; f1 = 890.0 MHz; f2 = 890.1 MHz.
(1)	h at Th = -40 °C.	(4)	gain at Th = -40 °C.	(1)	Th = -40 °C.
(2)	h at Th = 20 °C.	(5)	gain at Th = 20 °C.	(2)	Th = 20 °C.
(3)	h at Th = 80 °C.	(6)	gain at Th = 80 °C.	(3)	Th = 80 °C.
Fig.3 2-tone power gain and efficiency as				Fig.4 Third order intermodulation distortion as a
	functions of load power at different				function of load power at different

	temperatures.				temperatures.
−30			MDB160	−40			MDB161
handbook, halfpage				handbook, halfpage
d5				d7			(3)
(dBc)
	(3)			(dBc)
−40							(2)
				−50			(1)
	(1)	(2)
−50
				−60
−60
−70				−70
0	50	100	150	0	50	100	150
		PL (PEP) (W)				PL (PEP) (W)

VDS = 27 V; IDQ = 1.1 A; f1 = 890.0 MHz; f2 = 890.1 MHz.		VDS = 27 V; IDQ = 1.1 A; f1 = 890.0 MHz; f2 = 890.1 MHz.
(1)	Th = -40 °C.	(1)	Th = -40 °C.
(2)	Th = 20 °C.	(2)	Th = 20 °C.
(3)	Th = 80 °C.	(3)	Th = 80 °C.
Fig.5 Fifth order intermodulation distortion as a		Fig.6 Seventh order intermodulation distortion as
	function of load power at different		a function of load power at different
	temperatures.		temperatures.

2003 Jun 12

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