Philips BLF0810-180, BLF0810S-180 Technical data

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M3D379

M3D461

BLF0810-180; BLF0810S-180

Base station LDMOS transistors

Product specification
Supersedes data of 2003 May 09

2003 Jun 12

Philips Semiconductors Product specification

Base station LDMOS transistors BLF0810-180; BLF0810S-180

FEATURES

• Typical CDMA IS95 performance at standard settings
with a supply voltage of 27 V and IDQ of 1130 mA.
Adjacent channel bandwidth is 30 kHz, adjacent

APPLICATIONS

• Common source class-AB operation applications in the
860 to 960 MHz frequency range

• CDMA and multicarrier applications.

channel at ± 750 kHz:
– Output power = 30 W

DESCRIPTION

– Gain = 16 dB
– Efficiency = 27%

180 W LDMOS power transistor for base station
applications at frequencies from 800 to 1000 MHz.

– ACPR = −46 dBc at 750 kHz and BW = 30 kHz

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (800 to 1000 MHz)

• Internally matched for ease of use.

PINNING - SOT502A PINNING - SOT502B

PIN DESCRIPTION

1 drain
2 gate
3 source; connected to flange

PIN DESCRIPTION

1 drain
2 gate
3 source; connected to flange

handbook, halfpage

Top view

Fig.1 Simplified outline SOT502A (BLF0810-180).

1

2

3

MBK394

Top view

1

3

2

MBL105

Fig.2 Simplified outline SOT502B (BLF0810S-180).

QUICK REFERENCE DATA

Typical RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

Class-AB (2-tone) f

f

(MHz)

= 890.0; f2= 890.1 27 140 (PEP) 16 39 −28 −

1

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

d

3

(dBc)

ACPR 750

(dBc)

CDMA (IS95) 890 27 30 (AV) 16 27 −−46

2003 Jun 12 2

Philips Semiconductors Product specification

Base station LDMOS transistors BLF0810-180; BLF0810S-180

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-c

R

th j-hs

Notes

1. Thermal resistance is determined under RF operating conditions.

2. Depending on mounting condition in application.

drain-source voltage − 75 V
gate-source voltage −±15 V
storage temperature −65 +150 C
junction temperature − 200 °C

thermal resistance from junction to case Th=25°C, PL= 35 W (AV), note 1 0.42 K/W
thermal resistance from heatsink to junction Th=25°C, PL= 35 W (AV), note 2 0.62 K/W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

drain-source breakdown voltage VGS= 0; ID= 3 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID= 300 mA 4 − 5V
drain-source leakage current VGS= 0; VDS=36V −−3µA
on-state drain current VGS=V

+9V; VDS=10V 45 −−A

GSth

gate leakage current VGS= ±20 V; VDS=0 −−1µA
forward transconductance VDS= 10 V; ID=10A − 9 − S
drain-source on-state resistance VGS=9V; ID=10A − 60 − mΩ

2003 Jun 12 3

Philips Semiconductors Product specification

Base station LDMOS transistors BLF0810-180; BLF0810S-180

APPLICATION INFORMATION

RF performance in a common source class-AB circuit.

=27V; IDQ= 1130 mA; f = 890 MHz; Th=25°C; unless otherwise specified.

V

DS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Mode of operation: 2-tone CW, 100 kHz spacing

G

p

η

D

IRL input return loss −−13 −6dB
d

3

G

p

η

D

d

3

Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13)

G

p

η

D

ACPR 750 adjacent channel power ratio at BW = 30 kHz −−46 − dBc

gain power PL= 90 W (PEP) 15 16 − dB
drain efficiency 24 30 − %

third order intermodulation

−−40 − dBc

distortion
gain power PL= 125 W (PEP) − 16 − dB
drain efficiency 33 37 − %
third order intermodulation

−−32 −27 dBc

distortion
ruggedness VSWR = 15 : 1 through all

phases; P

= 125 W (PEP)

L

no degradation in output power

gain power PL=30W(AV) − 16 − dB
drain efficiency PL=30W(AV) − 27 − %

2003 Jun 12 4

Philips Semiconductors Product specification

Base station LDMOS transistors BLF0810-180; BLF0810S-180

50

handbook, halfpage

η

(%)

40

(4)

η(1,2,3)

30

20

10

0

0 50 100 150

VDS= 27V; IDQ= 1.1 A; f1= 890.0 MHz; f2= 890.1 MHz.
(1) η at T

(2) η at Th=20°C.
(3) η at Th=80°C.

= −40 °C.

h

(4) gain at T
(5) gain at Th=20°C.
(6) gain at Th=80°C.

(5)

(6)

PL (PEP) (W)

Fig.3 2-tone power gain and efficiency as

functions of load power at different
temperatures.

MDB158

= −40 °C.

h

17

16.5

16

15.5

15

14.5

14

gain
(dB)

−20

handbook, halfpage

d

3

(dBc)

−30

−40

(1)

−50

−60

0 50 100 150

VDS= 27 V; IDQ= 1.1 A; f1= 890.0 MHz; f2= 890.1 MHz.
(1) Th= −40 °C.
(2) Th=20°C.
(3) Th=80°C.

(2)
(3)

MDB159

PL (PEP) (W)

Fig.4 Third order intermodulation distortion as a

function of load power at different
temperatures.

−30

handbook, halfpage

d

5

(dBc)

−40

−50

−60

−70

0 50 100 150

VDS= 27 V; IDQ= 1.1 A; f1= 890.0 MHz; f2= 890.1 MHz.
(1) Th= −40 °C.
(2) Th=20°C.
(3) Th=80°C.

(3)

(1)

(2)

MDB160

PL (PEP) (W)

Fig.5 Fifth order intermodulation distortion as a

function of load power at different
temperatures.

−40

handbook, halfpage

d

7

(dBc)

−50

−60

−70

0

VDS= 27 V; IDQ= 1.1 A; f1= 890.0 MHz; f2= 890.1 MHz.
(1) Th= −40 °C.
(2) Th=20°C.
(3) Th=80°C.

50 100 150

MDB161

(3)

(2)

(1)

PL (PEP) (W)

Fig.6 Seventh orderintermodulation distortion as

a function of load power at different
temperatures.

2003 Jun 12 5