DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D167
BGY925
UHF amplifier module
Preliminary specification 1999 Nov 15
Philips Semiconductors Preliminary specification
UHF amplifier module BGY925
FEATURES
• 26 V nominal supply voltage
• 23 W output power into a load of 50 Ω with an RF drive
power of 36 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
920 to 960 MHz frequency range.
DESCRIPTION
The BGY925 is a three-stage UHF amplifier module in a
SOT365A package. It consists of one NPN silicon planar
transistor die and two silicon MOSFET dies mounted on a
metallized ceramic AlN substrate, together with matching
and bias circuitry.
QUICK REFERENCE DATA
RF performance at T
=25°C.
mb
PINNING - SOT365A
PIN DESCRIPTION
1 RF input
2V
3V
4 RF output
Flange ground
dbook, halfpage
Fig.1 Simplified outline.
S1
S2
2134
MSA447
MODE OF
OPERATION
f
(MHz)
V
, V
S1
S2
(V)
P
(W)
L
G
(dB)
p
η
(%)
(note 1)
, Z
Z
S
(Ω)
CW 920 to 960 26 23 ≥28 ≥30 50
Note
1. At P
=16W.
L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
S1
V
S2
P
D
P
L
T
stg
T
mb
DC supply voltage − 28 V
DC supply voltage − 28 V
input drive power − 80 mW
load power − 32 W
storage temperature −30 +100 °C
operating mounting-base temperature −10 +90 °C
L
1999 Nov 15 2
Philips Semiconductors Preliminary specification
UHF amplifier module BGY925
CHARACTERISTICS
Z
f frequency range 920 − 960 MHz
I
I
P
G
η efficiency P
H
H
VSWR
NF noise figure 8dBc
B AM bandwidth corner frequency = 3 dB;
=50Ω; PL=23W; VS1=VS2=26V; Tmb=25°C; unless otherwise specified.
S=ZL
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
S1
S2
L
p
2
3
supply current − 50 − mA
supply current PD< −60 dBm − 500 − mA
load power 23 −−W
power gain 160 mW ≤ PL<2W 283034dB
2W≤ P
L
≤ 23W 283032dB
L
=16W 30 −−%
second harmonic PL=16W −−−35 dBc
third harmonic PL=16W −−−40 dBc
input VSWR −−2:1
in
stability VSWR ≤ 3 : 1 through all phases;
V
=26to27V; PL=23W
S2
reverse intermodulation P
direct intermodulation P
carrier
f
i=fc
carrier
f
i=fc
=16W; P
± 600 kHz
=16W; P
+ 270 kHz
interference
interference
=1.6µW;
= 1.6 mW;
−−−60 dBc
−−80 − dBc
−−55 − dBc
2 −−MHz
= 16 W; modulation = 20%
P
carrier
ruggedness VSWR ≤ 5 : 1 through all phases;
=26V; PL=23W
V
S2
no degradation
1999 Nov 15 3
Philips Semiconductors Preliminary specification
Fig.2 Power gain as a function of load power;
typical values.
ZS=ZL=50Ω; VS1=VS2=26V; Tmb=25°C.
Fig.4 Power gain as a function of load power;
typical values.
ZS=ZL=50Ω; VS1=VS2=26V; Tmb=25°C.
UHF amplifier module BGY925
35
G
P
(dB)
940 MHz
920 MHz
960 MHz
P
(W)
L
30
25
20
0 102030
60
η
(%)
940 MHz
40
20
0
0 102030
ZS=ZL=50Ω; VS1=VS2=26V; Tmb=25°C.
920 MHz
960 MHz
P
(W)
L
Fig.3 Efficiency as a function of load power;
typical values.
35
G
P
(dB)
30
920 MHz
25
20
0.0001 0.01 1 100
960 MHz940 MHz
1999 Nov 15 4
3
I
S2
(A)
2
1
0
(W)
P
L
0.0001 0.01 1 100
ZS=ZL=50Ω; VS1=VS2=26V; Tmb=25°C;
f = 920 up to 960 MHz
(W)
P
L
Fig.5 Supply current as a function of load power;
typical values.