Philips BGY925 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

andbook, halfpage

M3D167

BGY925

UHF amplifier module

Preliminary specification 1999 Nov 15

Philips Semiconductors Preliminary specification

UHF amplifier module BGY925

FEATURES

• 26 V nominal supply voltage

• 23 W output power into a load of 50 Ω with an RF drive

power of 36 mW.

APPLICATIONS

• Base station transmitting equipment operating in the
920 to 960 MHz frequency range.

DESCRIPTION

The BGY925 is a three-stage UHF amplifier module in a
SOT365A package. It consists of one NPN silicon planar
transistor die and two silicon MOSFET dies mounted on a
metallized ceramic AlN substrate, together with matching
and bias circuitry.

QUICK REFERENCE DATA

RF performance at T

=25°C.

mb

PINNING - SOT365A

PIN DESCRIPTION

1 RF input
2V
3V
4 RF output

Flange ground

dbook, halfpage

Fig.1 Simplified outline.

S1

S2

2134

MSA447

MODE OF

OPERATION

f

(MHz)

V

, V

S1

S2

(V)

P

(W)

L

G

(dB)

p

η

(%)

(note 1)

, Z

Z

S

(Ω)

CW 920 to 960 26 23 ≥28 ≥30 50

Note

1. At P

=16W.

L

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

S1

V

S2

P

D

P

L

T

stg

T

mb

DC supply voltage − 28 V
DC supply voltage − 28 V
input drive power − 80 mW
load power − 32 W
storage temperature −30 +100 °C
operating mounting-base temperature −10 +90 °C

L

1999 Nov 15 2

Philips Semiconductors Preliminary specification

UHF amplifier module BGY925

CHARACTERISTICS

Z

f frequency range 920 − 960 MHz
I
I
P
G

η efficiency P
H
H
VSWR

NF noise figure 8dBc
B AM bandwidth corner frequency = 3 dB;

=50Ω; PL=23W; VS1=VS2=26V; Tmb=25°C; unless otherwise specified.

S=ZL

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

S1

S2

L

p

2

3

supply current − 50 − mA
supply current PD< −60 dBm − 500 − mA
load power 23 −−W
power gain 160 mW ≤ PL<2W 283034dB

2W≤ P

L

≤ 23W 283032dB

L

=16W 30 −−%
second harmonic PL=16W −−−35 dBc
third harmonic PL=16W −−−40 dBc
input VSWR −−2:1

in

stability VSWR ≤ 3 : 1 through all phases;

V

=26to27V; PL=23W

S2

reverse intermodulation P

direct intermodulation P

carrier

f

i=fc

carrier

f

i=fc

=16W; P

± 600 kHz

=16W; P

+ 270 kHz

interference

interference

=1.6µW;

= 1.6 mW;

−−−60 dBc

−−80 − dBc

−−55 − dBc

2 −−MHz

= 16 W; modulation = 20%

P

carrier

ruggedness VSWR ≤ 5 : 1 through all phases;

=26V; PL=23W

V

S2

no degradation

1999 Nov 15 3

Philips Semiconductors Preliminary specification

Fig.2 Power gain as a function of load power;

typical values.

ZS=ZL=50Ω; VS1=VS2=26V; Tmb=25°C.

Fig.4 Power gain as a function of load power;

typical values.

ZS=ZL=50Ω; VS1=VS2=26V; Tmb=25°C.

UHF amplifier module BGY925

35

G

P

(dB)

940 MHz

920 MHz

960 MHz

P

(W)

L

30

25

20

0 102030

60

η

(%)

940 MHz

40

20

0

0 102030

ZS=ZL=50Ω; VS1=VS2=26V; Tmb=25°C.

920 MHz

960 MHz

P

(W)

L

Fig.3 Efficiency as a function of load power;

typical values.

35

G

P

(dB)

30

920 MHz

25

20

0.0001 0.01 1 100

960 MHz940 MHz

1999 Nov 15 4

3

I

S2

(A)

2

1

0

(W)

P

L

0.0001 0.01 1 100

ZS=ZL=50Ω; VS1=VS2=26V; Tmb=25°C;
f = 920 up to 960 MHz

(W)

P

L

Fig.5 Supply current as a function of load power;

typical values.