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DISCRETE SEMICONDUCTORS
DATA SH EET
BGY89
CATV amplifier module
Product specification
File under Discrete Semiconductors, SC16
Philips Semiconductors
February 1995
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Philips Semiconductors Product specification
CATV amplifier module BGY89
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
page
2
351
Side view
Fig.1 Simplified outline.
789
Hybrid amplifier module for CATV
systems operating over a frequency
range of 40 to 450 MHz at a voltage
supply of 24 V (DC). The module is
intended for use as a line-extender.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
I
tot
power gain f = 50 MHz 37 − 39 dB
total current consumption (DC) VB = 24 V − 320 340 mA
MSA319
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 55 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
February 1995 2
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Philips Semiconductors Product specification
CATV amplifier module BGY89
CHARACTERISTICS
Bandwidth 40 to 450 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 37 − 39 dB
SL slope cable equivalent f = 40 to 450 MHz 0 − 2.5 dB
FL flatness of frequency response f = 40 to 450 MHz −−±0.4 dB
S
11
S
22
S
21
input return losses f = 40 to 80 MHz 20 −−dB
output return losses f = 40 to 80 MHz 20 −−dB
phase response f = 50 MHz −45 − +45 deg
CTB composite triple beat 60 channels flat;
X
mod
cross modulation 60 channels flat;
CSO composite second order distortion 60 channels flat;
d
2
V
o
second order distortion note 1 −−−70 dB
output voltage dim = −60 dB; note 2 63 −−dBmV
F noise figure f = 450 MHz −−5.5 dB
I
tot
total current consumption (DC) note 3 − 320 340 mA
= 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
B
f = 450 MHz 37 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 450 MHz 18 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 450 MHz 18 −−dB
V
= 46 dBmV;
o
measured at 445.25 MHz
Vo = 46 dBmV;
measured at 55.25 MHz
V
= 46 dBmV;
o
measured at 446.5 MHz
−−−58 dB
−−−58 dB
−−−58 dB
Notes
1. f
= 55.25 MHz; Vp = 46 dBmV;
p
fq = 343.25 MHz; Vq = 46 dBmV;
measured at fp + fq = 398.5 MHz.
2. Measured according to DIN45004B:
fp = 440.25 MHz; Vp = Vo = 63 dBmV;
fq = 447.25 MHz; Vq = Vo−6 dB;
fr = 449.25 MHz; Vr = Vo−6 dB;
measured at fp + fq - fr = 438.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
February 1995 3
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