DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGY885B
860 MHz, 20 dB gain push-pull
amplifier
Product specification
Supersedes data of 1997 Apr 07
2001 Nov 14
Philips Semiconductors Product specification
860 MHz, 20 dB gain push-pull amplifier BGY885B
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
B
7, 8 common
9 output
DESCRIPTION
The BGY885B is a hybrid amplifier module designed for
CATV systems operating over a frequency range of
40 to 860 MHz at a voltage supply of 24 V (DC).
handbook, halfpage
Side view
2
789
351
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 19.5 20.5 dB
f = 860 MHz 20 − dB
I
tot
total current consumption (DC) VB=24V − 235 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 14 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain push-pull amplifier BGY885B
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB= 24 V; Tmb=30°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 860 MHz 0 − 2dB
FL flatness of frequency response f = 40 to 860 MHz −−±0.3 dB
s
11
s
22
s
21
CTB composite triple beat 49 channels flat;
CSO composite second order distortion 49 channels flat;
d
2
V
o
NF noise figure f = 50 MHz −−5dB
I
tot
power gain f = 50 MHz 19.5 − 20.5 dB
f = 860 MHz 20 −−dB
input return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 18.5 −−dB
f = 160 to 320 MHz 17 −−dB
f = 320 to 640 MHz 15.5 −−dB
f = 640 to 860 MHz 14 −−dB
output return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 18.5 −−dB
f = 160 to 320 MHz 17 −−dB
f = 320 to 640 MHz 15.5 −−dB
f = 640 to 860 MHz 14 −−dB
phase response f = 50 MHz −45 − +45 deg
−−−60 dB
V
= 44 dBmV;
o
measured at 859.25 MHz
−−−60 dB
V
= 44 dBmV;
o
measured at 860.5 MHz
second order distortion note 1 −−−68 dB
output voltage dim= −60 dB; note 2 57.5 59 − dBmV
f = 550 MHz −−5.5 dB
f = 650 MHz −−6.5 dB
f = 750 MHz −−6.5 dB
f = 860 MHz −−7.5 dB
total current consumption (DC) note 3 −−235 mA
Notes
= 55.25 MHz; Vp= 44 dBmV;
1. f
p
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 860.5 MHz.
2. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 14 3